Magnetic device having multi-layer with insulating and conductive layers

Claim 2

A multi-state, multi-layer magnetic device having a length and a width comprising: a first magnetic layer; a second magnetic layer magnetically coupled with the first magnetic layer, directions of magnetic vectors in the second magnetic layer being antiparallel with magnetic vectors in the first magnetic layer; a third magnetic layer placed adjacent to the second magnetic layer, directions of magnetic vectors in the third magnetic layer being switchable; and the width of the multi-state, multi-layer magnetic device being less than a width of a magnetic domain wall and a ratio of the length of the multi-state, multi-layer magnetic device to the width of the multi-state, multi-layer magnetic device being in a range of 1 to 5.

Claim 3

The multi-state, multi-layer magnetic device as claimed in claim 1 wherein the third magnetic layer is placed between the first and second magnetic layers.

Claim 4

The multi-state, multi-layer magnetic device as claimed in claim 2 further including an electrically insulating layer placed between the second magnetic layer and the third magnetic layer.

Claim 5

The multi-state, multi-layer magnetic device as claimed in claim 3 further including an electrically conductive layer placed between the first magnetic layer and the third magnetic layer.

Claim 6

The multi-state, multi-layer magnetic device as claimed in claim 1 wherein the second and third magnetic layers form a magnetic tunneling junction memory portion including a non-conductive layer therebetween and the third layer whereby directions of magnetic vectors in the third magnetic layer causes an amount of a tunneling current flowing in the non-conductive layer to vary.

Claim 7

The multi-state, multi-layer magnetic device as claimed in claim 4 wherein the electrically insulating layer has a thickness less than 40 angstrom.

Claim 8

The multi-state, multi-layer magnetic device as claimed in claim 1 wherein the second magnetic layer is placed between the first and third magnetic layers.

Claim 9

The multi-state, multi-layer magnetic device as claimed in claim 7 further including an electrically conductive layer between the second magnetic layer and the third magnetic layer.

Claim 10

The multi-state, multi-layer magnetic device as claimed in claim 1 wherein the second and third magnetic layers form a giant magnetoresistive material portion including a conductive layer therebetween and the third layer whereby directions of magnetic vectors in the third magnetic layer cause an amount of a current flowing in the giant magnetoresistive material portion to vary.

Claim 11

The multi-state, multi-layer magnetic device as claimed in claim 8 wherein the electrically conductive layer has a thickness of 10 to 50 angstrom.

Claim 12

The multi-state, multi-layer magnetic device as claimed in claim 8 further including an electrically insulating layer between the first magnetic layer and the second magnetic layer.

Claim 13

The multi-state, multi-layer magnetic device as claimed in claim 11 wherein the second magnetic layer, the third magnetic layer, and the electrically conductive layer form a giant magnetoresistive device.

Claim 14

An array of multi-state, multi-layer magnetic memory cells comprising: a semiconductor substrate on which the multi-layer magnetic memory is formed; a plurality of multi-layer magnetic memory cells, each cell comprising: a first magnetic layer; a second magnetic layer magnetically coupled with the first magnetic layer, directions of magnetic vectors in the second magnetic layer being antiparallel with magnetic vectors in the first magnetic layer; a third magnetic layer placed adjacent to the second magnetic layer, directions of magnetic vectors in the third magnetic layer being switchable; and the width of the multi-state, multi-layer magnetic memory cell being less than a width of a magnetic domain wall and a ratio of the length of the multi-state, multi-layer magnetic memory cell to the width of the multi-state, multi-layer magnetic memory cell being in a range of 1 to 5; a plurality of word lines, one each associated with each column of multi-layer magnetic memory cells, the associated word line in each column being placed adjacent each multi-layer magnetic memory cells, for providing a word current by which a magnetic field is generated to switch directions of magnetic vectors in the third magnetic layer; and a plurality of sense lines for providing a sense current in order to sense states in the third magnetic layer.

Claim 15

An array of multi-state, multi-layer magnetic memory cells comprising: a semiconductor substrate on which the multi-layer magnetic memory is formed; a plurality of multi-layer magnetic memory cells, each cell comprising: a first magnetic layer; a second magnetic layer magnetically coupled with the first magnetic layer, directions of magnetic vectors in the second magnetic layer being antiparallel with magnetic vectors in the first magnetic layer; a third magnetic layer placed adjacent to the second magnetic layer, directions of magnetic vectors in the third magnetic layer being switchable; and the width of the multi-state, multi-layer magnetic memory cell being less than a width of a magnetic domain wall and a ratio of the length of the multi-state, multi-layer magnetic memory cell to the width of the multi-state, multi-layer magnetic memory cell being in a range of 1 to 5; a plurality of word lines, one each associated with each column of multi-layer magnetic memory cells, the associated word line in each column being placed adjacent each multi-layer magnetic memory cells, for providing a word current by which a magnetic field is generated to switch directions of magnetic vectors in the third magnetic layer; and a plurality of sense lines for providing a sense current in order to sense states in the third magnetic layer.

Claim 16

The array of multi-state, multi-layer magnetic memory cells as claimed in claim 13 wherein the third magnetic layer is placed between the first magnetic layer and the second magnetic layer, an electrically conductive layer is placed between the first magnetic layer and the third magnetic layers, and an electrically insulating layer is placed between the second magnetic layer and the third magnetic layer.

Claim 17

The array of multi-state, multi-layer magnetic memory cells as claimed in claim 14 wherein upper conductive lines and lower conductive lines are electrically and alternatively connected between upper layers of multi-layer magnetic memory cells and between lower layers of multi-layer magnetic memory cells, respectively so as to form the sense line.

Claim 18

The array of multi-state, multi-layer magnetic memory cells as claimed in claim 13 wherein the second magnetic layer is placed between the first magnetic layer and the third magnetic layer, an electrically insulating layer is placed between the first magnetic layer and the second magnetic layers, and an electrically conductive layer is placed between the second magnetic layer and the third magnetic layer.

Claim 19

The array of multi-state, multi-layer magnetic memory cells as claimed in claim 16 wherein at least the second magnetic layers, the third magnetic layers, and the conductive layers are electrically connected between the multi-layer magnetic memory cells so as to form the sense line.

Claim 20

A multi-state, multi-layer magnetic memory cell comprising: first, second, and third magnetic layers; an insulating layer positioned between the first and second magnetic layers; and an electrically conductive layer positioned between the second and third magnetic layers; wherein a ratio of a length of the multi-state, multi-layer magnetic memory cell to a width of the multi-state, multi-layer magnetic memory cell is in a range of 1 to 5.

Claim 21

A multi-state, multi-layer magnetic memory cell comprising: first, second, and third magnetic layers; an insulating layer positioned between the first and second magnetic layers; and an electrically conductive layer positioned between the second and third magnetic layers; wherein a ratio of a length of the multi-state, multi-layer magnetic memory cell to a width of the multi-state, multi-layer magnetic memory cell is in a range of 1 to 5.

Claim 22

The multi-state, multi-layer magnetic memory cell as claimed in claim 18 wherein magnetic vectors in the first magnetic layer are antiferromagnetically coupled with magnetic vectors in the second magnetic layer.

Claim 23

The multi-state, multi-layer magnetic memory cell as claimed in claim 19 wherein directions of magnetic vectors in the third magnetic layer are switchable.