US5766968A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Micro mask comprising agglomerated material
Assignee: International Business Machines Corp
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Filing: 1995-06-06
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Granted: 1998-06-16
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Expires: 2015-06-06
Abstract
Abstract A method of forming recesses in a substrate such as a capacitor so as to increase the surface area thereof and therefore the charge storage capacity of the capacitor. This is accomplished by utilizing a micro mask formed by agglomeration on the surface of the substrate. The agglomerated material, such as gold, titanium nitride or titanium silicide, is used as a mask for selectively etching the substrate to form recesses therein. Alternatively, an oxide transfer mask can be utilized with the agglomerated material micro mask to etch the substrate.
Inventors
- 👤 Michael Armacost
- 👤 A. Richard Baker, Jr.
- 👤 Wayne Stuart Berry
- 👤 Daniel Arthur Carl
- 👤 Donald McAllpine Kenney
- 👤 Thomas John Licata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:17
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/043; B; B82; B82Y; B82Y10/00; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/716; H10P; H10P76/00; H10P76/40; H10P76/405; H10P76/408; H10P76/4088; H10D1/712; Y; Y10; Y10S; Y10S148/00; Y10S148/105; Y10S438/00; Y10S438/942; Y10S438/947; Y10S438/964; Y10S977/00; Y10S977/70; Y10S977/81; Y10S977/84; Y10S977/888
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
70 words
A method of forming recesses in a substrate, said method comprising the steps of: selecting a substrate having a surface thereof; forming a pattern of agglomerated material which comprises an elemental conductor on said surface of said substrate; and selectively etching said substrate using said agglomerated material as a mask, so as to form recesses in said substrate and such that said agglomerated material is simultaneously removed from said surface.
Claim 2
Independent Claim
70 words
A method of forming recesses in a substrate, said method comprising the steps of: selecting a substrate having a surface thereof; forming a pattern of agglomerated material which comprises an elemental conductor on said surface of said substrate; and selectively etching said substrate using said agglomerated material as a mask, so as to form recesses in said substrate and such that said agglomerated material is simultaneously removed from said surface.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein said elemental conductor comprises gold.
Claim 4
Dependent Claim
25 words
The method of claim 1 wherein said forming of said pattern comprises sputter-deposition of said material under conditions which result in agglomeration of said material.
Claim 5
Dependent Claim
25 words
The method of claim 1 wherein said forming of said pattern comprises evaporation of said material under conditions which result in agglomeration of said material.
Claim 6
Dependent Claim
27 words
The method of claim 1 wherein said forming of said pattern comprises chemical vapor deposition of said material under conditions which result in agglomeration of said material.
Claim 7
Dependent Claim
33 words
The method of claim 1 wherein said forming of said pattern comprises applying a conformal layer of said material and heating said conformal layer under conditions which result in agglomeration of said material.
Claim 8
Dependent Claim
16 words
The method of claim 1 wherein said selective etch of said substrate comprises reactive ion etching.
Claim 9
Dependent Claim
15 words
The method of claim 1 where sputtering during said selective etch removes said agglomerated material.
Claim 10
Independent Claim
90 words
A method of forming recesses in a substrate, said method comprising the steps of: selecting a substrate having a surface thereof; forming a pattern of agglomerated material which comprises an elemental conductor on said surface of said substrate; and selectively etching said substrate using said agglomerated material as a mask, so as to form recesses in said substrate and such that said agglomerated material is simultaneously removed from said surface, wherein the pattern is formed by evaporation or chemical vapor deposition of the material under conditions which result in agglomeration.
Claim 11
Independent Claim
90 words
A method of forming recesses in a substrate, said method comprising the steps of: selecting a substrate having a surface thereof; forming a pattern of agglomerated material which comprises an elemental conductor on said surface of said substrate; and selectively etching said substrate using said agglomerated material as a mask, so as to form recesses in said substrate and such that said agglomerated material is simultaneously removed from said surface, wherein the pattern is formed by evaporation or chemical vapor deposition of the material under conditions which result in agglomeration.
Claim 12
Independent Claim
101 words
A method of forming recesses in a substrate, said method comprising the steps of: selecting a substrate having a surface thereof; forming a pattern of agglomerated material, which comprises one of the group consisting of an elemental and a compound conductor, by applying a conformal layer of said material and heating said conformal layer under conditions which result in agglomeration of the material, on said surface of said substrate; and selectively etching said substrate using said agglomerated material as a mask, so as to form recesses in said substrate and such that said agglomerated material is simultaneously removed from said surface.
Claim 13
Independent Claim
101 words
A method of forming recesses in a substrate, said method comprising the steps of: selecting a substrate having a surface thereof; forming a pattern of agglomerated material, which comprises one of the group consisting of an elemental and a compound conductor, by applying a conformal layer of said material and heating said conformal layer under conditions which result in agglomeration of the material, on said surface of said substrate; and selectively etching said substrate using said agglomerated material as a mask, so as to form recesses in said substrate and such that said agglomerated material is simultaneously removed from said surface.
Claim 14
Dependent Claim
12 words
The method of claim 10, wherein the substrate comprises a flat capacitor.
Claim 15
Dependent Claim
12 words
The method of claim 10, wherein the substrate comprises a stacked capacitor.
Claim 16
Dependent Claim
12 words
The method of claim 10, wherein the substrate comprises a silicon wafer.
Claim 17
Dependent Claim
43 words
The method of claim 10, wherein the substrate comprises a silicon wafer with an insulator layer overlying the wafer, said insulator layer being exposed on an upper surface thereof, and said surface of said substrate comprising said upper surface of said insulator layer.
Claim 18
Dependent Claim
54 words
The method of claim 10, wherein the selective etch comprises: first, selectively etching said insulator layer using said agglomerated material as a mask, so as to from recesses in said insulator layer; and second, selectively etching said substrate using said etched insulator layer as a mask, so as to form recesses in said substrate.
Claim 19
Dependent Claim
13 words
The method of claim 10, wherein the insulator layer comprises an oxide layer.
Claim 20
Dependent Claim
12 words
The method of claim 10, wherein the pattern comprises a random patter.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-15 | 2001-12-15 | 2002-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-15 | 2005-12-15 | 2006-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-15 | 2009-12-15 | 2010-06-16 | $7700.00 | Window Closed / Lapsed |