Patent US5763953A successfully refreshed from Google Patents.
US5763953A
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US
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Semiconductor device and method of manufacturing the same
Assignee: Toshiba Corp
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Filing: 1996-01-18
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Granted: 1998-06-09
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Expires: 2016-01-18
Abstract
Abstract A semiconductor device includes a first metal film formed on a semiconductor substrate, a second metal film formed on the first metal film and containing silver as a main component, and a protective film containing a metal element of the first metal film and covering at least the upper surface of the second metal film. The protective film is formed by annealing in an atmosphere containing a predetermined element. That is, the metal element of the first metal film is diffused into the second metal film and reacts with the predetermined element in the atmosphere on the surface of the second metal film, thereby forming the protective film. Aggregation of silver is prevented in the presence of the protective film.
Inventors
- 👤 Tadashi Iijima
- 👤 Hisako Ono
- 👤 Yukihiro Ushiku
- 👤 Akira Nishiyama
- 👤 Naomi Nakasa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:00
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10W20/031; H10W20/032; H10W20/033; H10W20/034; H10W20/037; H10W20/042; H10W20/044; H10W20/047; H10W20/048; H10W20/052; H10W20/0526; H10W20/055; H10W20/056; H10W20/059; H10W20/064; H10W20/076; H10W20/081; H10W20/089; H10W20/40; H10W20/41; H10W20/425; H10W20/44; H10W20/4403; H10W20/4432; H10W20/4435; Y; Y10; Y10S; Y10S148/00; Y10S148/015; Y10S148/035; Y10S438/00; Y10S438/914; Y10S438/922
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
90 words
A semiconductor device comprising: a first metal film formed on a semiconductor substrate; a second metal film formed on said first metal film and consisting essentially of silver or containing silver as a main component; and a film containing a metal element of said first metal film and covering at least an upper surface of said second metal film; wherein said film containing the metal element of said first metal film consists essentially of one selected from the group consisting of an oxide and a nitride of the metal element.
Claim 2
Dependent Claim
90 words
A semiconductor device comprising: a first metal film formed on a semiconductor substrate; a second metal film formed on said first metal film and consisting essentially of silver or containing silver as a main component; and a film containing a metal element of said first metal film and covering at least an upper surface of said second metal film; wherein said film containing the metal element of said first metal film consists essentially of one selected from the group consisting of an oxide and a nitride of the metal element.
Claim 3
Dependent Claim
37 words
A device according to claim 1, wherein said first metal film consists essentially of one selected from the group consisting of Ti, Si, In, Nb, Pb, Sb, Sn, Mg, Al, Cr, Be, Zn, and an alloy thereof.
Claim 4
Dependent Claim
21 words
A device according to claim 1, further comprising a diffusion barrier film between said semi-conductor substrate and said first metal film.
Claim 5
Dependent Claim
32 words
A device according to claim 1, wherein said first metal film consists essentially of Ti, and said film containing the metal element of said first metal film consists essentially of titanium oxide.
Claim 6
Dependent Claim
72 words
A semiconductor device comprising: a first metal film formed on a semiconductor substrate; a second metal film formed on said first metal film and consisting essentially of silver or containing silver as a main component; a film containing a metal element of said first metal film and covering at least an upper surface of said second metal film; and a diffusion barrier film between said semiconductor substrate and said first metal film.
Claim 7
Dependent Claim
72 words
A semiconductor device comprising: a first metal film formed on a semiconductor substrate; a second metal film formed on said first metal film and consisting essentially of silver or containing silver as a main component; a film containing a metal element of said first metal film and covering at least an upper surface of said second metal film; and a diffusion barrier film between said semiconductor substrate and said first metal film.
References Cited (Backward Citations)
DE3637513A1
Cited
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| 7.5 Years (Year 8) | 2005-06-08 | 2005-12-08 | 2006-06-09 | $3760.00 | Window Closed / Lapsed |
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