Patent US5763328A successfully refreshed from Google Patents.
US5763328A
Expired / Lapsed
US
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Ashing method
Assignee: Sony Corp
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Filing: 1996-04-29
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Granted: 1998-06-09
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Expires: 2016-04-29
Abstract
Abstract In an ashing method for ashing a wafer having an aluminum wiring layer etched by a chlorine containing gas, the wafer is ashed under the conditions that a mixture gas composed of an oxygen gas and at least one kind of alcohol gas selected from CH3OH, C2H5OH, n-C3H7OH, and i-C3H7OH is used as an ashing gas, a flow ratio between the alcohol gas and the oxygen gas is set in the range of 1:1 to 1:5, pressure in an ashing chamber is set to 200 Pa or more, and temperature in the ashing chamber is set in the range of 200 DEG C. to 270 DEG C. Accordingly, corrosion in the aluminum wiring layer due to a residual component of the chloride containing gas in a photoresist film can be prevented.
Inventors
- 👤 Syuuichi Yoshihara
- 👤 Junichi Taniguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 19:38
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; G03F7/427; H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/273
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
126 words
An ashing method for ashing a wafer having a wiring layer etched by a chlorine containing gas, by using a plasma ashing device; wherein said wafer is ashed under the conditions that a mixture gas composed of an oxygen gas and at least one kind of alcohol gas selected from CH 3 OH, C 2 H 5 OH, n--C 3 H 7 OH, and i--C 3 H 7 OH is used as an ashing gas, a flow ratio between said alcohol gas and said oxygen gas is set in the range of 1:2 to 1:5, pressure in an ashing chamber is set to 200 Pa (1.5 Torr) or more, and temperature in said ashing chamber is set in the range of 200° C. to 270° C.
Claim 2
Dependent Claim
126 words
An ashing method for ashing a wafer having a wiring layer etched by a chlorine containing gas, by using a plasma ashing device; wherein said wafer is ashed under the conditions that a mixture gas composed of an oxygen gas and at least one kind of alcohol gas selected from CH 3 OH, C 2 H 5 OH, n--C 3 H 7 OH, and i--C 3 H 7 OH is used as an ashing gas, a flow ratio between said alcohol gas and said oxygen gas is set in the range of 1:2 to 1:5, pressure in an ashing chamber is set to 200 Pa (1.5 Torr) or more, and temperature in said ashing chamber is set in the range of 200° C. to 270° C.
Claim 3
Dependent Claim
15 words
An ashing method according to claim 1, wherein said alcohol gas is a methanol gas.
Claim 4
Dependent Claim
18 words
An ashing method according to claim 1, wherein said wiring layer is formed of Al or Al alloy.
Claim 5
Dependent Claim
36 words
An ashing method according to claim 1, wherein said chlorine containing gas is at least one kind of gas selected from CCl 4 , CCl 4 +Cl 2 , SiCl 4 , and BCl 3 .
Claim 6
Dependent Claim
196 words
An ashing method for ashing a wafer having an aluminum containing wiring layer etched by a chlorine containing gas, by using a plasma ashing device, comprising: a first ashing step wherein said wafer is ashed under the conditions that a mixture gas composed of an oxygen gas and at least one kind of alcohol gas selected from CH 3 OH, C 2 H 5 OH, n--C 3 H 7 OH, and i--C 3 H 7 OH is used as an ashing gas, a flow ratio between said alcohol gas and said oxygen gas is set in the range of 1:2.5 to 1:10, pressure in an ashing chamber is set to 200 Pa (1.5 Torr) or less, and temperature in said ashing chamber is set in the range of 200° C. to 270° C.; and a second ashing step wherein said wafer is next ashed under the conditions that a flow ratio of said alcohol gas to said oxygen gas is set to 0.5 or more, pressure in said ashing chamber is set to 200 Pa (1.5 Torr) or more, and temperature in said ashing chamber is set in the range of 200° C. to 270° C.
Claim 7
Dependent Claim
196 words
An ashing method for ashing a wafer having an aluminum containing wiring layer etched by a chlorine containing gas, by using a plasma ashing device, comprising: a first ashing step wherein said wafer is ashed under the conditions that a mixture gas composed of an oxygen gas and at least one kind of alcohol gas selected from CH 3 OH, C 2 H 5 OH, n--C 3 H 7 OH, and i--C 3 H 7 OH is used as an ashing gas, a flow ratio between said alcohol gas and said oxygen gas is set in the range of 1:2.5 to 1:10, pressure in an ashing chamber is set to 200 Pa (1.5 Torr) or less, and temperature in said ashing chamber is set in the range of 200° C. to 270° C.; and a second ashing step wherein said wafer is next ashed under the conditions that a flow ratio of said alcohol gas to said oxygen gas is set to 0.5 or more, pressure in said ashing chamber is set to 200 Pa (1.5 Torr) or more, and temperature in said ashing chamber is set in the range of 200° C. to 270° C.
Claim 8
Dependent Claim
15 words
An ashing method according to claim 5, wherein said alcohol gas is a methanol gas.
Claim 9
Dependent Claim
125 words
An ashing method for ashing a wafer having an aluminum containing wiring layer etched by a chlorine containing gas, by using a plasma ashing device; wherein said wafer is ashed under the conditions that a mixture gas composed of an oxygen gas and at least one kind of alcohol gas selected from CH 3 OH, C 2 H 5 OH, n--C 3 H 7 OH, and i--C 3 H 7 OH is used as an ashing gas, a flow ratio of said alcohol gas to said oxygen gas is set to 0.5 or more, pressure in an ashing chamber is set to 200 Pa (1.5 Torr) or less, and temperature in said ashing chamber is set in the range of 200° C. to 270° C.
Claim 10
Dependent Claim
125 words
An ashing method for ashing a wafer having an aluminum containing wiring layer etched by a chlorine containing gas, by using a plasma ashing device; wherein said wafer is ashed under the conditions that a mixture gas composed of an oxygen gas and at least one kind of alcohol gas selected from CH 3 OH, C 2 H 5 OH, n--C 3 H 7 OH, and i--C 3 H 7 OH is used as an ashing gas, a flow ratio of said alcohol gas to said oxygen gas is set to 0.5 or more, pressure in an ashing chamber is set to 200 Pa (1.5 Torr) or less, and temperature in said ashing chamber is set in the range of 200° C. to 270° C.
Claim 11
Dependent Claim
15 words
An ashing method according to claim 7, wherein said alcohol gas is a methanol gas.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-08 | 2001-12-08 | 2002-06-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-08 | 2005-12-08 | 2006-06-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-08 | 2009-12-08 | 2010-06-09 | $7700.00 | Window Closed / Lapsed |