Patent US5760433A successfully refreshed from Google Patents.
US5760433A
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In situ reactive layers for protection of ferroelectric integrated circuits
Assignee: Raytheon Co
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Filing: 1996-05-31
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Granted: 1998-06-02
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Expires: 2016-05-31
Abstract
Abstract A layer of sacrificial, chemically reactive material is formed as part of the fabrication process of an integrated circuit, and covers active circuitry to protect it from reaction with hydrogen. Integrated circuits and fabrication methods are provided by the present invention. The present invention is used to fabricate integrated circuits such as ferroelectric memories, and the like, using die or substrates containing one or more sacrificial layers of strontium bismuth niobate tantalate, for example. The sacrificial layers consume atmospheric hydrogen or other materials that otherwise would react with active circuitry of the integrated circuits and render them ineffective.
Inventors
- 👤 O. Glenn Ramer
- 👤 Robin W. Rosser
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:02
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; H10P14/6939
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
70 words
A method of protecting an integrated circuit containing ferroelectric materials from reaction with hydrogen, said method comprising the steps of: providing a substrate; fabricating active circuitry on the substrate wherein the active circuitry contains ferroelectric materials; covering the active circuitry with a sacrificial continuous layer of material that reacts with and is consumed by hydrogen whereby the hydrogen is prevented from reacting with the ferroelectric materials of the active circuitry.
Claim 2
Independent Claim
70 words
A method of protecting an integrated circuit containing ferroelectric materials from reaction with hydrogen, said method comprising the steps of: providing a substrate; fabricating active circuitry on the substrate wherein the active circuitry contains ferroelectric materials; covering the active circuitry with a sacrificial continuous layer of material that reacts with and is consumed by hydrogen whereby the hydrogen is prevented from reacting with the ferroelectric materials of the active circuitry.
Claim 3
Dependent Claim
19 words
The method of claim 1 wherein the sacrificial layer comprises a ferroelectric formulation used to fabricate the active circuitry.
Claim 4
Dependent Claim
14 words
The method of claim 2 wherein the sacrificial layer comprises strontium bismuth niobate tantalate.
Claim 5
Dependent Claim
23 words
The method of claim 1 wherein the sacrificial layer comprises an active component contained in the ferroelectric formulation used in the active circuitry.
Claim 6
Dependent Claim
12 words
The method of claim 4 wherein the sacrificial layer comprises bismuth oxide.
Claim 7
Dependent Claim
13 words
The method of claim 1 wherein the integrated circuit comprises a ferroelectric memory.
Claim 8
Dependent Claim
19 words
The method of claim 1 wherein the sacrificial layer comprises a metal oxide that is easily reduced by hydrogen.
Claim 9
Dependent Claim
11 words
The method of claim 7 wherein the sacrificial layer comprises PdO.
Claim 10
Dependent Claim
21 words
The method of claim 1 wherein the integrated circuit is fabricated and hermetically sealed in a package for long term use.
Claim 11
Dependent Claim
15 words
The method of claim 9 wherein the package contains nitrogen with contaminant amounts of hydrogen.
Claim 12
Dependent Claim
57 words
An integrated circuit comprising: a substrate; active circuitry fabricated on the substrate wherein the active circuitry contains ferroelectric materials; a sacrificial layer covering the active circuitry that comprises a continuous layer of material that reacts with and is consumed by hydrogen and which prevents the hydrogen from reacting with the ferroelectric materials contained in the active circuitry.
Claim 13
Dependent Claim
57 words
An integrated circuit comprising: a substrate; active circuitry fabricated on the substrate wherein the active circuitry contains ferroelectric materials; a sacrificial layer covering the active circuitry that comprises a continuous layer of material that reacts with and is consumed by hydrogen and which prevents the hydrogen from reacting with the ferroelectric materials contained in the active circuitry.
Claim 14
Dependent Claim
20 words
The integrated circuit of claim 11 wherein the sacrificial layer comprises a ferroelectric formulation used to fabricate the active circuitry.
Claim 15
Dependent Claim
13 words
The integrated circuit of claim 12 wherein the sacrificial layer comprises bismuth oxide.
Claim 16
Dependent Claim
24 words
The integrated circuit of claim 11 wherein the sacrificial layer comprises an active component contained in the ferroelectric formulation used in the active circuitry.
Claim 17
Dependent Claim
15 words
The integrated circuit of claim 14 wherein the sacrificial layer comprises strontium bismuth niobate tantalate.
Claim 18
Dependent Claim
14 words
The integrated circuit of claim 11 wherein the active circuitry comprises a ferroelectric memory.
Claim 19
Dependent Claim
20 words
The integrated circuit of claim 11 wherein the sacrificial layer comprises a metal oxide that is easily reduced by hydrogen.
Claim 20
Dependent Claim
12 words
The integrated circuit of claim 17 wherein the sacrificial layer comprises PdO.
References Cited (Backward Citations)
US4149301A
Cited
US5371699A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-06-01 | 2001-12-01 | 2002-06-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-01 | 2005-12-01 | 2006-06-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-01 | 2009-12-01 | 2010-06-02 | $7700.00 | Window Closed / Lapsed |