US5759908A
Expired / Lapsed
US
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Method for forming SiC-SOI structures
Assignee: University of Cincinnati
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Filing: 1995-05-16
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Granted: 1998-06-02
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Expires: 2015-05-16
Abstract
Abstract A method is disclosed for forming crystalline silicon carbide (SiC) semiconductors on a semiconductor-on-insulator (SOI) structure. In this method, the thin silicon layer of an SOI substrate is converted to silicon carbide using a carbonization reaction. The SiC layer is then, optionally, further increased in thickness using a vapor deposition reaction, preferably using a silicon-containing cyclobutane gas. Rather than increasing the thickness of the SiC layer, the vapor deposition process can also be used to deposit a layer of another semiconductor (e.g., a III-N or III-P semiconductor) on the thin SiC layer. The products made by this process are also claimed.
Inventors
- 👤 Andrew J. Steckl
- 👤 Chong Yuan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 14:29
CPC Classifications
H; H10; H10W; H10W10/00; C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/36; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3208; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3414; H10P14/3416; H10P14/3418; H10P14/36; H10W10/01; Y; Y10; Y10S; Y10S148/00; Y10S148/148; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
35 words
A method of forming an epitaxial silicon carbide layer on an SOI substrate having a silicon layer comprising converting the silicon layer on the SOI substrate to said silicon carbide layer by a carbonization reaction.
Claim 2
Independent Claim
35 words
A method of forming an epitaxial silicon carbide layer on an SOI substrate having a silicon layer comprising converting the silicon layer on the SOI substrate to said silicon carbide layer by a carbonization reaction.
Claim 3
Dependent Claim
26 words
The method of claim 1 wherein the silicon carbide layer formed in the carbonization reaction having a thickness of from about 0.1 to about 1 μm.
Claim 4
Dependent Claim
17 words
The method according to claim 1 wherein the SOI substrate is cleaned prior to the carbonization reaction.
Claim 5
Dependent Claim
43 words
The method according to claim 3 wherein the cleaning step is carried out by a method selected from the group consisting of dipping the substrate in acid, and exposing the substrate to HCl/H 2 at a temperature of greater than about 1000° C.
Claim 6
Dependent Claim
33 words
The method according to claim 2 wherein, in the carbonization reaction, the substrate is exposed to a gas mixture comprising a hydrocarbon and hydrogen gas at a temperature greater than about 1000° C.
Claim 7
Dependent Claim
26 words
A method according to claim 5 wherein the hydrocarbon gas is selected from the group consisting of methane, ethane, propane, butane, ethylene, acetylene, and mixtures thereof.
Claim 8
Dependent Claim
53 words
The method according to claim 2 wherein, following carbonization, the substrate having said SiC layer is heated above about 600° C. and exposed to one or more gases containing silicon and carbon for a sufficient time to form an SiC layer having a total thickness of from about 0.01 to about 100 μm.
Claim 9
Dependent Claim
26 words
The method according to claim 7 wherein the gases containing silicon and carbon are selected from the group consisting of silicon-containing hydrocarbons, silanes, and mixtures thereof.
Claim 10
Dependent Claim
16 words
The method according to claim 8 wherein the gas containing silicon and carbon comprises silicon-containing cyclobutane.
Claim 11
Dependent Claim
63 words
The method according to claim 9 wherein the cyclobutane is selected from the group consisting of: (a) ##STR3## (b) ##STR4## (c) and mixtures thereof, wherein each R is independently selected from the group consisting of hydrogen, fluorine, and hydrocarbon radicals having 1-4 carbon atoms, and each R' is independently selected from the group consisting of hydrogen, and hydrocarbon radicals having 1-4 carbon atoms.
Claim 12
Dependent Claim
35 words
The method according to claim 9 wherein the gas containing silicon and carbon is mixed with an inert carrier gas such that the ratio of SiC gas:carrier gas is from about 1:1 to about 1:10,000.
Claim 13
Dependent Claim
24 words
The method according to claim 9 wherein the substrate having said SiC layer is heated to from about 650° C. to about 1,000° C.
Claim 14
Dependent Claim
25 words
The method according to claim 12 wherein the heated substrate is exposed to the silicon-containing cyclobutane gas for from about 1 to about 100 minutes.
Claim 15
Dependent Claim
30 words
The method according to claim 13 wherein the heated substrate is exposed to the silicon-containing cyclobutane gas at a pressure of from about 10 -3 Torr to about atmospheric pressure.
Claim 16
Independent Claim
184 words
A method of forming an epitaxial silicon carbide layer on an SOI substrate having a silicon layer comprising the steps of (a) cleaning said substrate by dipping it in an acid or exposing it to HCl/H 2 at a temperature of greater than about 1,000° C.; (b) converting the silicon layer on said substrate to said silicon carbide layer having a thickness of from about 0.1 to about 1 μm by carbonization, wherein the substrate is exposed to a gas mixture comprising a hydrocarbon selected from the group consisting of methane, ethane, propane, butane, ethylene, acetylene, and mixtures thereof, together with hydrogen gas at a temperature of greater than about 1,000° C.; and (c) heating said substrate to temperature of from about 650° C. to about 1,000° C. and exposing it to a silicon-containing cyclobutane gas at a pressure of from about 10 -3 Torr to about atmospheric pressure, for a period of time of from about 1 to about 30 minutes, so as to form an SiC layer on said substrate having a total thickness of from about 1 to about 10 μm.
Claim 17
Independent Claim
184 words
A method of forming an epitaxial silicon carbide layer on an SOI substrate having a silicon layer comprising the steps of (a) cleaning said substrate by dipping it in an acid or exposing it to HCl/H 2 at a temperature of greater than about 1,000° C.; (b) converting the silicon layer on said substrate to said silicon carbide layer having a thickness of from about 0.1 to about 1 μm by carbonization, wherein the substrate is exposed to a gas mixture comprising a hydrocarbon selected from the group consisting of methane, ethane, propane, butane, ethylene, acetylene, and mixtures thereof, together with hydrogen gas at a temperature of greater than about 1,000° C.; and (c) heating said substrate to temperature of from about 650° C. to about 1,000° C. and exposing it to a silicon-containing cyclobutane gas at a pressure of from about 10 -3 Torr to about atmospheric pressure, for a period of time of from about 1 to about 30 minutes, so as to form an SiC layer on said substrate having a total thickness of from about 1 to about 10 μm.
Claim 18
Dependent Claim
50 words
The method according to claim 2 wherein, following carbonization, the substrate having said SiC layer is heated above about 600° C. and exposed to one or more gases containing III-N or III-P semiconductor materials for a sufficient time to form a III-N or III-P semiconductor layer on said SiC layer.
Claim 19
Dependent Claim
22 words
The method according to claim 16 wherein said III-N semiconductor layer has a thickness of from about 0.1 to about 10 μm.
Claim 20
Dependent Claim
29 words
The method according to claim 17 wherein the gases used in said vapor deposition step are selected from those containing B, Ga, Al, In, N, P and mixtures thereof.
Claim 21
Dependent Claim
24 words
The method according to claim 18 wherein the substrate having said SiC layer is heated to from about 650° C. to about 1,000° C.
Claim 22
Dependent Claim
28 words
The method according to claim 19 wherein the heated substrate is exposed to the III-N or III-P semiconductor-containing gas for from about 1 minute to about 30 minutes.
Claim 23
Dependent Claim
32 words
The method according to claim 20 wherein the heated substrate is exposed to the III-N or III-P semiconductor-containing gas at a pressure of from about 10 -3 Torr to about atmospheric pressure.
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