Patent US5757835A successfully refreshed from Google Patents.
US5757835A
Expired / Lapsed
US
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Semiconductor laser device
Assignee: Mitsubishi Electric Corp
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Filing: 1997-01-03
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Granted: 1998-05-26
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Expires: 2017-01-03
Abstract
Abstract A semiconductor laser device includes a structure in which a first conductivity AlGaInP first cladding layer, an active layer, a second conductivity type AlGaInP second cladding layer, a second conductivity type AlGaInP intermediate layer, and a second conductivity type AlGaInP third cladding layer are successively epitaxially grown on a first conductivity type GaAs semiconductor substrate. The intermediate layer is within a profile of light produced in the active layer and includes AlGaInP layers having a band gap energy smaller than the band gap energy of the second cladding layer and the third cladding layer and larger than the band gap energy of the active layer. The intermediate layer has a multi-layer structure in which (Al x Ga 1-x )InP layers (0≦x≦0.2) and (Al x Ga 1-x )InP layers (0.5≦x≦1) are alternatingly laminated. By adding a small amount of Al to the intermediate layer, the band gap energy of the intermediate layer is broadened to control absorption of light emitted from the active layer and an increase in the threshold current of laser oscillation is suppressed. Since the intermediate layer has a multi-layer structure, a semiconductor laser device with sufficient etch stopping effect during etching of an off (100) substrate is realized.
Inventors
- 👤 Kenichi Ono
- 👤 Hitoshi Tada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 11:50
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/2202; H01S5/30; H01S5/32; B; B82; B82Y; B82Y20/00; H01S5/223; H01S5/2231; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/824; H01S5/2054; H01S5/2081; H01S5/209; H01S5/3211; H01S5/3216; H01S5/34; H01S5/343; H01S5/34326
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
154 words
A semiconductor laser device comprising: a first conductivity type GaAs semiconductor substrate; and a structure including, successively, a first conductivity type AlGaInP first cladding layer, an active layer having a band gap energy, a second conductivity type AlGaInP second cladding layer, a second conductivity type AlGaInP intermediate layer, and a second conductivity type AlGaInP third cladding layer, disposed on the first conductivity type GaAs semiconductor substrate, said intermediate layer being within a profile of light produced in said active layer and comprising AlGaInP layers, each layer of said intermediate layer being sufficiently thin so as to have a band gap energy smaller than band gap energies of said second cladding layer and said third cladding layer and larger than the band gap energy of said active layer, said intermediate layer having a multi-layer structure in which (Al x Ga 1-x )InP layers (0<x≦0.2) and (Al x Ga 1-x )InP layers (0.5≦x≦1) are alternatingly laminated.
Claim 2
Dependent Claim
154 words
A semiconductor laser device comprising: a first conductivity type GaAs semiconductor substrate; and a structure including, successively, a first conductivity type AlGaInP first cladding layer, an active layer having a band gap energy, a second conductivity type AlGaInP second cladding layer, a second conductivity type AlGaInP intermediate layer, and a second conductivity type AlGaInP third cladding layer, disposed on the first conductivity type GaAs semiconductor substrate, said intermediate layer being within a profile of light produced in said active layer and comprising AlGaInP layers, each layer of said intermediate layer being sufficiently thin so as to have a band gap energy smaller than band gap energies of said second cladding layer and said third cladding layer and larger than the band gap energy of said active layer, said intermediate layer having a multi-layer structure in which (Al x Ga 1-x )InP layers (0<x≦0.2) and (Al x Ga 1-x )InP layers (0.5≦x≦1) are alternatingly laminated.
Claim 3
Dependent Claim
209 words
A semiconductor laser device comprising: a first conductivity type GaAs semiconductor substrate; and a structure including, successively, a first conductivity type AlGaInP first cladding layer, an active layer having a band gap energy, a second conductivity type AlGaInP second cladding layer, a second conductivity type intermediate layer, and a second conductivity type AlGaInP third cladding layer, disposed on the first conductivity type GaAs semiconductor substrate, said intermediate layer being within a profile of light produced in said active layer and comprising AlGaInP layers, each layer of said intermediate layer being sufficiently thin so as to have a band gap energy smaller than band gap energies of said second cladding layer and said third cladding layer and larger than the band gap energy of said active layer, said intermediate layer having a multi-layer structure in which (Al x Ga 1-x )InP layers (0≦x≦0.2) and (Al x Ga 1-x )InP layers (0.5≦x≦1) are alternatingly laminated, wherein each layer of said intermediate layer has a thickness so that an integer multiple of the thickness is equal to a wavelength of visible light, whereby interference fringes due to said intermediate layer being disposed under said third cladding layer and having the multi-layer structure can be observed during etching of said third cladding layer.
Claim 4
Dependent Claim
209 words
A semiconductor laser device comprising: a first conductivity type GaAs semiconductor substrate; and a structure including, successively, a first conductivity type AlGaInP first cladding layer, an active layer having a band gap energy, a second conductivity type AlGaInP second cladding layer, a second conductivity type intermediate layer, and a second conductivity type AlGaInP third cladding layer, disposed on the first conductivity type GaAs semiconductor substrate, said intermediate layer being within a profile of light produced in said active layer and comprising AlGaInP layers, each layer of said intermediate layer being sufficiently thin so as to have a band gap energy smaller than band gap energies of said second cladding layer and said third cladding layer and larger than the band gap energy of said active layer, said intermediate layer having a multi-layer structure in which (Al x Ga 1-x )InP layers (0≦x≦0.2) and (Al x Ga 1-x )InP layers (0.5≦x≦1) are alternatingly laminated, wherein each layer of said intermediate layer has a thickness so that an integer multiple of the thickness is equal to a wavelength of visible light, whereby interference fringes due to said intermediate layer being disposed under said third cladding layer and having the multi-layer structure can be observed during etching of said third cladding layer.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-05-25 | 2001-11-24 | 2002-05-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-25 | 2005-11-24 | 2006-05-26 | $3760.00 | Window Closed / Lapsed |
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