US5753533A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for etching a tungsten film
Assignee: Renesas Electronics Corp
•
Filing: 1996-06-14
•
Granted: 1998-05-19
•
Expires: 2016-06-14
Abstract
Abstract The invention provide a method for manufacturing a wire by etching a metallic film involving a high melting point metal without side etching. When a tungsten film 4c is etched by a mixed gas involving SF 6 and N 2 , tungsten nitride films 14 are formed on side walls of an tungsten film 4c being etched, and said tungsten nitride films 14 serve as protector against etching. The selected figure is FIG. 5.
Inventors
- 👤 Kazumi Saito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:36
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
96 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulator film on a semiconductor substrate, forming a barrier metal film on said insulator film, forming a tungsten film on said barrier metal film, forming a resist film with a pattern on said tungsten film, and selectively etching said tungsten film to expose said barrier metal film, by a mixed gas containing at least fluoride gas and nitrogen gas, using said resist film as a mask, a flow of said nitrogen gas being more than 25% of a flow of said fluoride gas.
Claim 2
Independent Claim
96 words
A method for manufacturing a semiconductor device comprising the steps of: forming an insulator film on a semiconductor substrate, forming a barrier metal film on said insulator film, forming a tungsten film on said barrier metal film, forming a resist film with a pattern on said tungsten film, and selectively etching said tungsten film to expose said barrier metal film, by a mixed gas containing at least fluoride gas and nitrogen gas, using said resist film as a mask, a flow of said nitrogen gas being more than 25% of a flow of said fluoride gas.
References Cited (Backward Citations)
JPH0234920A
Cited
US4948462A
Cited
JPH03201529A
Cited
US5024722A
Cited
US5273609A
Cited
US5378309A
Cited
US5376585A
Cited
US5347696A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-05-18 | 2001-11-17 | 2002-05-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-18 | 2005-11-17 | 2006-05-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-18 | 2009-11-17 | 2010-05-19 | $7700.00 | Window Closed / Lapsed |