Patent US5753420A successfully refreshed from Google Patents.
US5753420A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Rough dielectric film by etchback of residue
Assignee: Texas Instruments Inc
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Filing: 1996-09-13
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Granted: 1998-05-19
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Expires: 2016-09-13
Abstract
Abstract A capacitor and method of forming the capacitor for high density applications. The capacitor (100) comprises a storage node (106) having peaks (108) formed on a surface thereof. The peaks (108) are created by forming a photoresist residue layer (130) on the polysilicon layer of the storage node (108). The structure is then dry etched using the residue layer (130) as a mask to create peaks (108).
Inventors
- 👤 George R. Misium
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 17:31
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/0035; G03F7/004; G03F7/09; G03F7/094; G03F7/16; G03F7/168; H; H10; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/043; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/716; G03F7/26; G03F7/265
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
146 words
A method for forming a capacitor on a structure comprising the steps of: depositing a layer of polysilicon over said structure; depositing a layer of photoresist comprising a material compatible with silylation over said layer of polysilicon; without exposing said layer of photoresist to a reticle, exposing said layer of photoresist to a silicon-containing compound to silylate said layer of photoresist; and dry etching said layer of photoresist after said silylating step such that a layer of photoresist remnants remains on said layer of polysilicon. etching said layer of polysilicon using said layer of photoresist remnants as a masking layer to form peaks in said polysilicon layer; removing said photoresist remnants layer; patterning and etching said layer of polysilicon to create a storage node having said peaks; forming a capacitor dielectric layer over said storage node; and forming a top conductive node over said capacitor dielectric.
Claim 2
Independent Claim
146 words
A method for forming a capacitor on a structure comprising the steps of: depositing a layer of polysilicon over said structure; depositing a layer of photoresist comprising a material compatible with silylation over said layer of polysilicon; without exposing said layer of photoresist to a reticle, exposing said layer of photoresist to a silicon-containing compound to silylate said layer of photoresist; and dry etching said layer of photoresist after said silylating step such that a layer of photoresist remnants remains on said layer of polysilicon. etching said layer of polysilicon using said layer of photoresist remnants as a masking layer to form peaks in said polysilicon layer; removing said photoresist remnants layer; patterning and etching said layer of polysilicon to create a storage node having said peaks; forming a capacitor dielectric layer over said storage node; and forming a top conductive node over said capacitor dielectric.
Claim 3
Dependent Claim
19 words
The method of claim 1, wherein said exposing step occurs at a temperature in the range of 160°-200° C.
Claim 4
Dependent Claim
19 words
The method of claim 1, wherein said exposing step occurs for a duration in the range of 0.1-5 minutes.
Claim 5
Dependent Claim
15 words
The method of claim 1, wherein said dry etching step comprises an oxygen plasma etch.
Claim 6
Dependent Claim
11 words
The method of claim 1, wherein said silicon-containing compound comprises hexamethyldisilane.
Claim 7
Dependent Claim
17 words
The method of claim 1, wherein said peaks have a height on the order of 100 nm.
Claim 8
Dependent Claim
17 words
The method of claim 1 wherein said layer of photoresist comprises a photosensitive resin containing a polymer.
Claim 9
Independent Claim
128 words
A method for forming a capacitor on a structure comprising the steps of: depositing a layer of polysilicon over said structure; depositing a layer of photoresist over said layer of polysilicon; without exposing said layer of photoresist to light through a reticle, treating said layer of photoresist with a silicon-containing compound; dry etching said layer of photoresist such that a layer of remnants remains on said layer of polysilicon; etching said layer of polysilicon using said layer of remnants as a masking layer to form peaks in said polysilicon layer; removing said remnants layer; patterning and etching said layer of polysilicon to create a storage node having said peaks; forming a capacitor dielectric layer over said storage node; and forming a top conductive node over said capacitor dielectric.
Claim 10
Independent Claim
128 words
A method for forming a capacitor on a structure comprising the steps of: depositing a layer of polysilicon over said structure; depositing a layer of photoresist over said layer of polysilicon; without exposing said layer of photoresist to light through a reticle, treating said layer of photoresist with a silicon-containing compound; dry etching said layer of photoresist such that a layer of remnants remains on said layer of polysilicon; etching said layer of polysilicon using said layer of remnants as a masking layer to form peaks in said polysilicon layer; removing said remnants layer; patterning and etching said layer of polysilicon to create a storage node having said peaks; forming a capacitor dielectric layer over said storage node; and forming a top conductive node over said capacitor dielectric.
Claim 11
Dependent Claim
19 words
The method of claim 8, wherein said treating step occurs at a temperature in the range of 160°-200° C.
Claim 12
Dependent Claim
19 words
The method of claim 8, wherein said treating step occurs for a duration in the range of 0.1-5 minutes.
Claim 13
Dependent Claim
15 words
The method of claim 8, wherein said dry etching step comprises an oxygen plasma etch.
Claim 14
Dependent Claim
11 words
The method of claim 8 wherein said silicon-containing compound comprises hexamethyldisilane.
Claim 15
Dependent Claim
17 words
The method of claim 8, wherein said peaks have a depth on the order of 100 nm.
Claim 16
Dependent Claim
17 words
The method of claim 8, wherein said layer of photoresist comprises a photosensitive resin containing a polymer.
References Cited (Backward Citations)
US5411911A
Cited
US5562801A
Cited
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