Patent US5753419A successfully refreshed from Google Patents.
US5753419A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Increase dram node capacitance by etching rough surface
Assignee: Texas Instruments Inc
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Filing: 1996-09-13
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Granted: 1998-05-19
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Expires: 2016-09-13
Abstract
Abstract A capacitor and method of forming the capacitor for high density applications. The capacitor (100) comprises a storage node (106) having waves (108) formed on the vertical surfaces thereof. The waves (108) are created using a silylated photoresist. The conditions of silylation and subsequent etch are such that, when etched, the silylated photoresist has waves on the vertical edges thereof. During the etch to form the storage node (106), the waves are transferred to the storage node (106). Waves (108) increase the surface area of the storage node (106) and thus the resulting capacitance.
Inventors
- 👤 George R. Misium
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:10
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/265; H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/043; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/716; G03F7/40
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
151 words
A method for forming a capacitor on a structure comprising the steps of: depositing a layer of polysilicon over said structure; depositing a layer of photoresist comprising a material compatible with silylation over said layer of polysilicon; exposing said layer of photoresist to light through a reticle; exposing said layer of photoresist to a silicon-containing compound to silylate said layer of photoresist; and dry etching said layer of photoresist after said silylating step, wherein the process conditions of said dry etching and exposing to a silicon-containing compound steps create a photoresist masking layer having waves on the vertical edges thereof; etching said layer of polysilicon using said photoresist masking layer to form a storage node having waves on a plurality of vertical edges of said storage node; removing said photoresist masking layer; forming a capacitor dielectric layer over said storage node; and forming a top conductive node over said capacitor dielectric.
Claim 2
Independent Claim
151 words
A method for forming a capacitor on a structure comprising the steps of: depositing a layer of polysilicon over said structure; depositing a layer of photoresist comprising a material compatible with silylation over said layer of polysilicon; exposing said layer of photoresist to light through a reticle; exposing said layer of photoresist to a silicon-containing compound to silylate said layer of photoresist; and dry etching said layer of photoresist after said silylating step, wherein the process conditions of said dry etching and exposing to a silicon-containing compound steps create a photoresist masking layer having waves on the vertical edges thereof; etching said layer of polysilicon using said photoresist masking layer to form a storage node having waves on a plurality of vertical edges of said storage node; removing said photoresist masking layer; forming a capacitor dielectric layer over said storage node; and forming a top conductive node over said capacitor dielectric.
Claim 3
Dependent Claim
24 words
The method of claim 1, wherein said exposing to a silicon containing compound step occurs at a temperature in the range of 150°-180° C.
Claim 4
Dependent Claim
26 words
The method of claim 1, wherein said exposing to a silicon containing compound step occurs for a duration in the range of 0.1 to 5 minutes.
Claim 5
Dependent Claim
15 words
The method of claim 1, wherein said dry etching step comprises an oxygen plasma etch.
Claim 6
Dependent Claim
11 words
The method of claim 1, wherein said silicon-containing compound comprises hexamethyldisilane.
Claim 7
Dependent Claim
17 words
The method of claim 1, wherein said waves have a depth on the order of 100 nm.
Claim 8
Dependent Claim
17 words
The method of claim 1 wherein said photoresist masking layer comprises a photosensitive resin containing a polymer.
Claim 9
Independent Claim
156 words
A method for forming a capacitor on a structure comprising the steps of: depositing a layer of polysilicon over said structure; depositing a layer of photoresist over said layer of polysilicon; exposing a portion of said layer of photoresist to light through a reticle; treating said layer of photoresist with a silicon-containing compound; dry etching said layer of photoresist such that said portion of said layer of photoresist is removed and the remaining photoresist has photoresist waves on the vertical edges, wherein the process conditions of said dry etching and treating steps cause said photoresist waves to form on the vertical edges; etching said layer of polysilicon using said remaining photoresist as a masking layer to form a storage node having polysilicon waves on a plurality of vertical edges of said storage node; removing said remaining photoresist; forming a capacitor dielectric layer over said storage node; and forming a top conductive node over said capacitor dielectric.
Claim 10
Independent Claim
156 words
A method for forming a capacitor on a structure comprising the steps of: depositing a layer of polysilicon over said structure; depositing a layer of photoresist over said layer of polysilicon; exposing a portion of said layer of photoresist to light through a reticle; treating said layer of photoresist with a silicon-containing compound; dry etching said layer of photoresist such that said portion of said layer of photoresist is removed and the remaining photoresist has photoresist waves on the vertical edges, wherein the process conditions of said dry etching and treating steps cause said photoresist waves to form on the vertical edges; etching said layer of polysilicon using said remaining photoresist as a masking layer to form a storage node having polysilicon waves on a plurality of vertical edges of said storage node; removing said remaining photoresist; forming a capacitor dielectric layer over said storage node; and forming a top conductive node over said capacitor dielectric.
Claim 11
Dependent Claim
19 words
The method of claim 8, wherein said treating step occurs at a temperature in the range of 150°-180° C.
Claim 12
Dependent Claim
19 words
The method of claim 8, wherein said treating step occurs for a duration in the range of 0.1-5 minutes.
Claim 13
Dependent Claim
15 words
The method of claim 8, wherein said dry etching step comprises an oxygen plasma etch.
Claim 14
Dependent Claim
11 words
The method of claim 8 wherein said silicon-containing compound comprises hexamethyldisilane.
Claim 15
Dependent Claim
17 words
The method of claim 8, wherein said waves have a depth on the order of 100 nm.
Claim 16
Dependent Claim
17 words
The method of claim 8, wherein said layer of photoresist comprises a photosensitive resin containing a polymer.
References Cited (Backward Citations)
US5411911A
Cited
US5562801A
Cited
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