US5751018A
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Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers
Assignee: University of California, San Diego
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Filing: 1994-04-29
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Granted: 1998-05-12
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Expires: 2014-04-29
Abstract
Abstract Methods are described for attaching semiconductor nanocrystals to solid inorganic surfaces, using self-assembled bifunctional organic monolayers as bridge compounds. Two different techniques are presented. One relies on the formation of self-assembled monolayers on these surfaces. When exposed to solutions of nanocrystals, these bridge compounds bind the crystals and anchor them to the surface. The second technique attaches nanocrystals already coated with bridge compounds to the surfaces. Analyses indicate the presence of quantum confined clusters on the surfaces at the nanolayer level. These materials allow electron spectroscopies to be completed on condensed phase clusters, and represent a first step towards synthesis of an organized assembly of clusters. These new products are also disclosed.
Inventors
- 👤 A. Paul Alivisatos
- 👤 Vicki L. Colvin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 04:52
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2922; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3242; H10P14/3244; H10P14/3246; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3424; H10P14/3428; H10P14/3431; H10P14/3451; H10P14/3452; H10P14/3461; B; B82; B82Y; B82Y30/00
Claims Analysis
Total Claims: 45
Claim 1
Independent Claim
66 words
A semiconductor assembly comprising: a) a solid inorganic substrate surface; b) a self-assembled monolayer of heterobifunctional bridging moieties covalently bonded thereto, each of said bridging moieties having two functional groups, with one of said functional groups covalently bonded to said substrate surface; and c) semiconductor nanocrystals covalently bonded to said bridging moieties through a second of said two functional groups on each of said bridging moieties.
Claim 2
Dependent Claim
66 words
A semiconductor assembly comprising: a) a solid inorganic substrate surface; b) a self-assembled monolayer of heterobifunctional bridging moieties covalently bonded thereto, each of said bridging moieties having two functional groups, with one of said functional groups covalently bonded to said substrate surface; and c) semiconductor nanocrystals covalently bonded to said bridging moieties through a second of said two functional groups on each of said bridging moieties.
Claim 3
Dependent Claim
16 words
The semiconductor assembly of claim 1 wherein the solid inorganic substrate surface is an oxidic surface.
Claim 4
Dependent Claim
17 words
The semiconductor assembly of claim 2 wherein the solid inorganic substrate surface is a silicon oxide surface.
Claim 5
Dependent Claim
17 words
The semiconductor assembly of claim 2 wherein the solid inorganic substrate surface is an aluminum oxide surface.
Claim 6
Dependent Claim
18 words
The semiconductor assembly of claim 1 wherein the solid inorganic substrate surface is a solid metal substrate surface.
Claim 7
Dependent Claim
17 words
The semiconductor assembly of claim 5 wherein the solid metal substrate surface is a solid gold surface.
Claim 8
Dependent Claim
17 words
The semiconductor assembly of claim 5 wherein the solid metal substrate surface is a solid aluminum surface.
Claim 9
Dependent Claim
13 words
The semiconductor assembly of claim 1 wherein the semiconductor nanocrystals are III-V semiconductors.
Claim 10
Dependent Claim
13 words
The semiconductor assembly of claim 1 wherein the semiconductor hanocrystals are II-VI semiconductors.
Claim 11
Dependent Claim
11 words
The semiconductor assembly of claim 1 wherein the semiconductor is CdS.
Claim 12
Dependent Claim
11 words
The semiconductor assembly of claim 1 wherein the semiconductor is CdSe.
Claim 13
Dependent Claim
11 words
The semiconductor assembly of claim 1 wherein the semiconductor is ZnS.
Claim 14
Dependent Claim
11 words
The semiconductor assembly of claim 1 wherein the semiconductor is ZnSe.
Claim 15
Dependent Claim
11 words
The semiconductor assembly of claim 1 wherein the semiconductor is GaAs.
Claim 16
Dependent Claim
11 words
The semiconductor assembly of claim 1 wherein the semiconductor is InAs.
Claim 17
Dependent Claim
11 words
The semiconductor assembly of claim 1 wherein the semiconductor is GaP.
Claim 18
Dependent Claim
74 words
A semiconductor assembly comprising: a) semiconductor nanocrystals; b) one or more bridging moieties, each comprising an organic molecule having at least two functional groups and from 4 to 8 carbons between said functional groups, covalently bonded to said semiconductor nanocrystals through one of said least two functional groups; and c) a surface covalently bonded to said one or more bridging moieties through another of said at least two functional groups on said bridging moieties.
Claim 19
Dependent Claim
74 words
A semiconductor assembly comprising: a) semiconductor nanocrystals; b) one or more bridging moieties, each comprising an organic molecule having at least two functional groups and from 4 to 8 carbons between said functional groups, covalently bonded to said semiconductor nanocrystals through one of said least two functional groups; and c) a surface covalently bonded to said one or more bridging moieties through another of said at least two functional groups on said bridging moieties.
Claim 20
Dependent Claim
34 words
The semiconductor assembly of claim 17 wherein each of said one or more bridging moieties comprises a dithiol having the formula H--S--R--S--H, wherein R is an organic group having from 4 to 8 carbons.
Claim 21
Dependent Claim
27 words
The semiconductor assembly of claim 17 wherein each of said one or more bridging moieties comprises a difunctional molecule having a thiol group and a carboxyl group.
Claim 22
Dependent Claim
29 words
The semiconductor assembly of claim 17 wherein said surface comprises a solid surface of a material selected from the group consisting of silicon oxide, aluminum oxide, and a metal.
Claim 23
Dependent Claim
13 words
The semiconductor assembly of claim 17 wherein said semiconductor nanocrystals are III-V semiconductors.
Claim 24
Dependent Claim
13 words
The semiconductor assembly of claim 17 wherein said semiconductor nanocrystals are II-VI semiconductors.
Claim 25
Dependent Claim
86 words
A semiconductor assembly comprising: a) semiconductor nanocrystals; b) a monolayer comprising a plurality of organic bridging moieties, each having at least two functional groups spaced apart by from 4 to 8 carbon atoms, and covalently bonded to said semiconductor nanocrystals through one of said at least two functional groups; and c) a solid support surface covalently bonded to said monolayer of organic bridging moieties through another of said at least two or more functional groups on each of said plurality of bridging moieties comprising said monolayer.
Claim 26
Dependent Claim
86 words
A semiconductor assembly comprising: a) semiconductor nanocrystals; b) a monolayer comprising a plurality of organic bridging moieties, each having at least two functional groups spaced apart by from 4 to 8 carbon atoms, and covalently bonded to said semiconductor nanocrystals through one of said at least two functional groups; and c) a solid support surface covalently bonded to said monolayer of organic bridging moieties through another of said at least two or more functional groups on each of said plurality of bridging moieties comprising said monolayer.
Claim 27
Dependent Claim
16 words
The semiconductor assembly of claim 23 wherein each of said organic bridging moieties comprises a dithiol.
Claim 28
Dependent Claim
25 words
The semiconductor assembly of claim 23 wherein each of said organic bridging moieties comprises a difunctional molecule having a thiol group and a carboxyl group.
Claim 29
Dependent Claim
66 words
A semiconductor assembly comprising: a) a solid inorganic substrate surface; b) a self-assembled monolayer of homobifunctional bridging moieties covalently bonded thereto, each of said bridging moieties having two functional groups, with one of said functional groups covalently bonded to said substrate surface; and c) semiconductor nanocrystals covalently bonded to said bridging moieties through a second of said two functional groups on each of said bridging moieties.
Claim 30
Dependent Claim
66 words
A semiconductor assembly comprising: a) a solid inorganic substrate surface; b) a self-assembled monolayer of homobifunctional bridging moieties covalently bonded thereto, each of said bridging moieties having two functional groups, with one of said functional groups covalently bonded to said substrate surface; and c) semiconductor nanocrystals covalently bonded to said bridging moieties through a second of said two functional groups on each of said bridging moieties.
Claim 31
Dependent Claim
16 words
The semiconductor assembly of claim 26 wherein the solid inorganic substrate surface is an oxidic surface.
Claim 32
Dependent Claim
17 words
The semiconductor assembly of claim 27 wherein the solid inorganic substrate surface is a silicon oxide surface.
Claim 33
Dependent Claim
17 words
The semiconductor assembly of claim 27 wherein the solid inorganic substrate surface is an aluminum oxide surface.
Claim 34
Dependent Claim
17 words
The semiconductor assembly of claim 26 wherein the solid inorganic substrate surface is a solid metal surface.
Claim 35
Dependent Claim
17 words
The semiconductor assembly of claim 30 wherein the solid inorganic substrate surface is a solid gold surface.
Claim 36
Dependent Claim
17 words
The semiconductor assembly of claim 30 wherein the solid metal substrate surface is a solid aluminum surface.
Claim 37
Dependent Claim
13 words
The semiconductor assembly of claim 26 wherein the semiconductor nanocrystals are III-V semiconductors.
Claim 38
Dependent Claim
13 words
The semiconductor assembly of claim 26 wherein the semiconductor nanocrystals are II-VI semiconductors.
Claim 39
Dependent Claim
11 words
The semiconductor assembly of claim 26 wherein the semiconductor is CdS.
Claim 40
Dependent Claim
11 words
The semiconductor assembly of claim 26 wherein the semiconductor is CdSe.
Claim 41
Dependent Claim
11 words
The semiconductor assembly of claim 26 wherein the semiconductor is ZnS.
Claim 42
Dependent Claim
11 words
The semiconductor assembly of claim 26 wherein the semiconductor is ZnSe.
Claim 43
Dependent Claim
11 words
The semiconductor assembly of claim 26 wherein the semiconductor is GaAs.
Claim 44
Dependent Claim
11 words
The semiconductor assembly of claim 26 wherein the semiconductor is InAs.
Claim 45
Dependent Claim
11 words
The semiconductor assembly of claim 26 wherein the semiconductor is GaP.
References Cited (Backward Citations)
US4802951A
Cited
US5505928A
Cited
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