US5505928A
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Preparation of III-V semiconductor nanocrystals
Assignee: University of California, San Diego
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Filing: 1994-04-21
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Granted: 1996-04-09
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Expires: 2014-04-21
Abstract
Abstract Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.
Inventors
- 👤 A. Paul Alivisatos
- 👤 Michael A. Olshavsky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:02
CPC Classifications
C; C01; C01B; C01B25/00; C01B25/08; C01B25/082; C01B25/087; C01B25/088; Y; Y10; Y10S; Y10S977/00; Y10S977/70; Y10S977/813; Y10S977/815; Y10S977/826
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
31 words
Particles of III-V semiconductor, said particles being crystalline, being soluble in quinoline or pyridine, and being sized such that at least about 50% are between 1 nanometer and 6 nanometers across.
Claim 2
Dependent Claim
31 words
Particles of III-V semiconductor, said particles being crystalline, being soluble in quinoline or pyridine, and being sized such that at least about 50% are between 1 nanometer and 6 nanometers across.
Claim 3
Dependent Claim
11 words
The particles of claim 1 wherein the III-V semiconductor is GaAs.
Claim 4
Dependent Claim
11 words
The particles of claim 1 wherein the III-V semiconductor is GaP.
Claim 5
Dependent Claim
11 words
The particles of claim 1 wherein the III-V semiconductor is GaAs--P.
Claim 6
Dependent Claim
11 words
The particles of claim 1 wherein the III-V semiconductor is GaSb.
Claim 7
Dependent Claim
11 words
The particles of claim 1 wherein the III-V semiconductor is InAs.
Claim 8
Dependent Claim
11 words
The particles of claim 1 wherein the III-V semiconductor is InP.
Claim 9
Dependent Claim
11 words
The particles of claim 1 wherein the III-V semiconductor is InSb.
Claim 10
Dependent Claim
11 words
The particles of claim 1 wherein the III-V semiconductor is AlAs.
Claim 11
Dependent Claim
11 words
The particles of claim 1 wherein the III-V semiconductor is AlP.
Claim 12
Dependent Claim
11 words
The particles of claim 1 wherein the III-V semiconductor is AlSb.
Claim 13
Dependent Claim
63 words
A process for forming particles of a III-V semiconductor comprising a) reacting, in a nonwater reaction medium comprising a nitrogen-containing aromatic heterocyclic material, a reaction medium-soluble group III metal source with a reaction medium-soluble group V nonmetal source at a temperature above 100°, b) removing the reaction medium thereby forming a reaction product comprising particles of III-V semiconductor, and c) recovering the particles.
Claim 14
Dependent Claim
63 words
A process for forming particles of a III-V semiconductor comprising a) reacting, in a nonwater reaction medium comprising a nitrogen-containing aromatic heterocyclic material, a reaction medium-soluble group III metal source with a reaction medium-soluble group V nonmetal source at a temperature above 100°, b) removing the reaction medium thereby forming a reaction product comprising particles of III-V semiconductor, and c) recovering the particles.
Claim 15
Dependent Claim
14 words
The process of claim 12 wherein the nitrogen-containing aromatic heterocyclic material is a liquid.
Claim 16
Dependent Claim
14 words
The process of claim 13 wherein the nitrogen-containing aromatic heterocyclic liquid material is quinoline.
Claim 17
Dependent Claim
14 words
The process of claim 13 wherein the nitrogen-containing aromatic heterocyclic liquid material is pyridine.
Claim 18
Dependent Claim
19 words
The process of claim 12 wherein the group III metal source is a group III metal salt or alkyl.
Claim 19
Dependent Claim
12 words
The process of claim 16 wherein the group III metal is gallium.
Claim 20
Dependent Claim
14 words
The process of claim 17 wherein the gallium source is a gallium III halide.
Claim 21
Dependent Claim
14 words
The process of claim 18 wherein the gallium III halide is GaCl 3 .
Claim 22
Dependent Claim
14 words
The process of claim 17 wherein the nitrogen-containing aromatic heterocyclic material is a liquid.
Claim 23
Dependent Claim
14 words
The process of claim 20 wherein the nitrogen-containing aromatic heterocyclic liquid material is quinoline.
Claim 24
Dependent Claim
43 words
The process of claim 12 wherein the group V nonmetal source is selected from the group consisting of arsine, phosphine, stibine, trialkylarsine, trialkyphosphine, trialkylstibine, tris(tri-C 1 C 6 alkylsylyl) arsine, tris(tri-C 1 -C 6 alkylsilyl phosphine and tris(tri-C 1 -C 6 alkylsilyl) stibine.
Claim 25
Dependent Claim
17 words
The process of claim 12 wherein the group V nonmetal source is tris(tri-C 1 -C 6 alkyl-silyl)arsine.
Claim 26
Dependent Claim
13 words
The process of claim 23 wherein the group V nonmetal source is tris(trimethylsilyl)arsine.
Claim 27
Dependent Claim
60 words
A process for preparing particles of gallium arsenide comprising the steps of (a) reacting gallium chloride with tri(trimethylsilyl)arsine in an about 1:1 molar ratio in a quinoline reaction phase at a temperature of from 200°-300° C. thereby forming a GaAs-containing reaction product, and (b) removing the quinoline from the reaction product thereby yielding GaAs particles as a dry red powder.
Claim 28
Dependent Claim
60 words
A process for preparing particles of gallium arsenide comprising the steps of (a) reacting gallium chloride with tri(trimethylsilyl)arsine in an about 1:1 molar ratio in a quinoline reaction phase at a temperature of from 200°-300° C. thereby forming a GaAs-containing reaction product, and (b) removing the quinoline from the reaction product thereby yielding GaAs particles as a dry red powder.
References Cited (Backward Citations)
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