← Back to Patent Explorer
US5748435A Expired / Lapsed US ⏱️ 0.0 years remaining

Apparatus for controlling backside gas pressure beneath a semiconductor wafer

Assignee: Applied Materials Inc
•
Filing: 1996-12-30
•
Granted: 1998-05-05
•
Expires: 2016-12-30
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract Apparatus for providing self-regulated gas flow between a wafer and a wafer support surface of a wafer support in a semiconductor wafer processing system. The apparatus consists of a gas inlet port extending through the wafer support for supplying gas to the wafer support surface and a plurality of exhaust ports, extending from the support surface through the wafer support, for exhausting the gas from the support surface, where the plurality of exhaust ports maintain a uniform backside gas pressure between the wafer and the wafer support surface.

Inventors

  • 👤 Vijay Parkhe

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 04:58
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/708; G03F7/70858; G03F7/70866; G03F7/70875; G03F7/70691; G03F7/707; G03F7/70708; H; H02; H02N; H02N13/00; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/70; H10P72/72; H10P72/722

Claims Analysis

Total Claims: 16
Claim 1
Independent Claim 92 words
Apparatus for controlling backside gas pressure for a gas flowing between a wafer and a wafer support surface of a wafer support in a semiconductor wafer processing chamber comprising: a gas inlet port extending through the wafer support for supplying gas to the wafer support surface; and a plurality of exhaust ports, extending from the support surface through the wafer support, for exhausting the gas from the support surface into the chamber where the plurality of exhaust ports maintain a uniform backside gas pressure between the wafer and the wafer support surface.
Claim 2
Dependent Claim 92 words
Apparatus for controlling backside gas pressure for a gas flowing between a wafer and a wafer support surface of a wafer support in a semiconductor wafer processing chamber comprising: a gas inlet port extending through the wafer support for supplying gas to the wafer support surface; and a plurality of exhaust ports, extending from the support surface through the wafer support, for exhausting the gas from the support surface into the chamber where the plurality of exhaust ports maintain a uniform backside gas pressure between the wafer and the wafer support surface.
Claim 3
Dependent Claim 35 words
The apparatus of claim 1 wherein the plurality of exhaust ports extend from the support surface to a sidewall of the wafer support and are uniformly distributed proximate the periphery of the wafer support surface.
Claim 4
Dependent Claim 26 words
The apparatus of claim 1 wherein said wafer support further comprises a pedestal and an electrostatic chuck, where the electrostatic chuck contains said wafer support surface.
Claim 5
Dependent Claim 11 words
The apparatus of claim 3 wherein the electrostatic chuck is bipolar.
Claim 6
Dependent Claim 20 words
The apparatus of claim 1 wherein the support surface of the wafer support comprises a plurality of gas distribution grooves.
Claim 7
Dependent Claim 11 words
The apparatus of claim 5 wherein the grooves are "T" shaped.
Claim 8
Dependent Claim 23 words
The apparatus of claim 6 wherein branches of each "T" shaped groove extend approximately one fourth of a circumference of the wafer support.
Claim 9
Dependent Claim 12 words
The apparatus of claim 4 wherein the plurality of grooves is four.
Claim 10
Dependent Claim 42 words
The apparatus of claim 5 wherein there are fours grooves that are "T" shaped and branches of each "T" shaped groove extend approximately one fourth of a circumference of the wafer support, where an end of each branch contains an exhaust port.
Claim 11
Dependent Claim 20 words
The apparatus of claim 1 wherein the diameter of each of the plurality of exhaust ports is about 1.6 mm.
Claim 12
Dependent Claim 13 words
The apparatus of claim 1 wherein the number of exhaust ports is eight.
Claim 13
Dependent Claim 101 words
Apparatus for providing self-regulated gas flow between a wafer and a wafer support surface of a wafer support in a semiconductor wafer processing system comprising: a pedestal with a top surface and a sidewall; an electrostatic chuck adhered to the top surface of the pedestal, the electrostatic chuck having grooves in a wafer support surface; a gas inlet port extending through the pedestal and electrostatic chuck for supplying gas to the grooves; and a plurality of exhaust ports connecting a groove to the sidewall by extending through the pedestal for directing the flow of gas away from the wafer support surface.
Claim 14
Dependent Claim 101 words
Apparatus for providing self-regulated gas flow between a wafer and a wafer support surface of a wafer support in a semiconductor wafer processing system comprising: a pedestal with a top surface and a sidewall; an electrostatic chuck adhered to the top surface of the pedestal, the electrostatic chuck having grooves in a wafer support surface; a gas inlet port extending through the pedestal and electrostatic chuck for supplying gas to the grooves; and a plurality of exhaust ports connecting a groove to the sidewall by extending through the pedestal for directing the flow of gas away from the wafer support surface.
Claim 15
Dependent Claim 22 words
The apparatus of claim 12 wherein the plurality of exhaust ports are uniformly distributed proximate the periphery of the wafer support surface.
Claim 16
Dependent Claim 42 words
The apparatus of claim 12 wherein there are fours grooves that are "T" shaped and branches of each "T" shaped groove extend approximately one fourth of a circumference of the wafer support, where an end of each branch contains an exhaust port.

References Cited (Backward Citations)

US4565601A Cited
US4771730A Cited
US5103367A Cited
US4980022A Cited
US5238499A Cited
US5267607A Cited
US5458687A Cited
US5427670A Cited
US5382311A Cited
US5622593A Cited
US5474614A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2001-05-04 2001-11-03 2002-05-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2005-05-04 2005-11-03 2006-05-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2009-05-04 2009-11-03 2010-05-05 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag