US5746928A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for cleaning an electrostatic chuck of a plasma etching apparatus
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1996-06-03
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Granted: 1998-05-05
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Expires: 2016-06-03
Abstract
Abstract A method of cleaning an electrostatic chuck of a plasma etching apparatus wherein a dummy wafer is placed on the chuck, the chamber evacuated, and an RF voltage applied that is greater than the normal RF voltage used to etch.
Inventors
- 👤 Shih Kuei Yen
- 👤 Po-Tao Chu
- 👤 Kuang-Hui Chang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:54
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32798; H01J37/32853; H01J37/32862; H10; H10P; H10P72/00; H10P72/70; H10P72/72; H10P72/722
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
113 words
A process for cleaning debris and contamination from the surface of an electrostatic chuck of a plasma etching apparatus having a process chamber, a source of RF power, an electrostatic wafer chuck within the process chamber, a chuck electrode, and a source of DC power connected to said chuck electrode comprising; placing a dummy wafer on and in direct contact with the electrostatic wafer chuck, evacuating the process chamber, applying an RF voltage with a wattage in excess of the normal wattage applied during normal etching procedure, while refraining to apply the DC power to the chuck electrode, turning off the RF power, removing the dummy wafer and the adhering debris and contamination.
Claim 2
Dependent Claim
113 words
A process for cleaning debris and contamination from the surface of an electrostatic chuck of a plasma etching apparatus having a process chamber, a source of RF power, an electrostatic wafer chuck within the process chamber, a chuck electrode, and a source of DC power connected to said chuck electrode comprising; placing a dummy wafer on and in direct contact with the electrostatic wafer chuck, evacuating the process chamber, applying an RF voltage with a wattage in excess of the normal wattage applied during normal etching procedure, while refraining to apply the DC power to the chuck electrode, turning off the RF power, removing the dummy wafer and the adhering debris and contamination.
Claim 3
Dependent Claim
29 words
The method of claim 1 wherein the wattage of the applied RF voltage is in the range of 100 to 120% of the wattage applied during normal etching procedure.
Claim 4
Dependent Claim
22 words
The method of claim 2 wherein the RF power is applied for a time in the range of 20 to 30 seconds.
Claim 5
Dependent Claim
40 words
The method of claim 1 wherein the cleaning process is performed periodically by inserting dummy wafers into cassettes of wafers to be processed, and sequentially placing the wafers and dummy wafers on the chuck for etching or cleaning the chuck.
Claim 6
Dependent Claim
19 words
The method of claim 1 wherein the RF voltage is applied across the process chamber and the wafer chuck.
Claim 7
Dependent Claim
80 words
The method of claim 1 which further includes testing the cleanliness of the chuck, comprising; providing a groove system in the top surface of the chuck, placing a clean semiconductor wafer on the wafer chuck, ecacuating the air from the process chamber, applying a source of DC power to the chuck electrode to secure the wafer to the chuck, introducing an inert gas into te groove system in the wafer chuck, and monitoring the gas leakage from the groove system.
Claim 8
Dependent Claim
18 words
The method of claim 1 wherein the RF voltage is applied for a time greater than 15 seconds.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-05-04 | 2001-11-03 | 2002-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-05-04 | 2005-11-03 | 2006-05-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-05-04 | 2009-11-03 | 2010-05-05 | $7700.00 | Window Closed / Lapsed |