Patent US5744829A successfully refreshed from Google Patents.
US5744829A
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A1GaInP light emitting diode
Assignee: Resonac Holdings Corp
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Filing: 1996-12-26
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Granted: 1998-04-28
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Expires: 2016-12-26
Abstract
Abstract An AlGaInP light-emitting diode includes a double hetero-junction light-emitting structure of (AlxGa1-x)yIn1-yP on a GaAs substrate. A multi-film reflection layer is provided between the GaAs substrate and the double hetero-junction light-emitting structure. The layers forming the double hetero-junction are lattice matched with the GaAs substrate at an epitaxial growth temperature. A GaP current diffusion layer is disposed on the upper surface of the double hetero-junction light-emitting structure, and ohmic electrodes are provided on the underside of the GaAs substrate and on the upper surface of the current diffusion layer.
Inventors
- 👤 Shigetaka Murasato
- 👤 Yasuyuki Sakaguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 01:17
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/814; H10H20/816
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
107 words
An AlGaInP light-emitting diode, comprising: a GaAs substrate having an ohmic electrode on its rear surface, a reflection layer comprised of a lamination of multiple layers provided on the GaAs substrate, a double hetero-junction light-emitting structure of (Al x Ga 1-x ) y In 1-y P provided on the reflection layer, said light-emitting structure being comprised of an active layer between upper and lower cladding layers, with each of the layers being lattice matched to the GaAs substrate at an epitaxial growth temperature, a current diffusion layer formed of GaP provided on the double hetero-junction light-emitting structure, and an ohmic electrode provided on the current diffusion layer.
Claim 2
Dependent Claim
107 words
An AlGaInP light-emitting diode, comprising: a GaAs substrate having an ohmic electrode on its rear surface, a reflection layer comprised of a lamination of multiple layers provided on the GaAs substrate, a double hetero-junction light-emitting structure of (Al x Ga 1-x ) y In 1-y P provided on the reflection layer, said light-emitting structure being comprised of an active layer between upper and lower cladding layers, with each of the layers being lattice matched to the GaAs substrate at an epitaxial growth temperature, a current diffusion layer formed of GaP provided on the double hetero-junction light-emitting structure, and an ohmic electrode provided on the current diffusion layer.
Claim 3
Dependent Claim
25 words
A light-emitting diode according to claim 1 that includes a bandgap changing compositional gradient layer between the reflection layer and the double hetero-junction light-emitting structure.
Claim 4
Dependent Claim
27 words
A light-emitting diode according to claim 1 that includes a compositional gradient layer to alleviate lattice mismatching, between the upper cladding layer and the current diffusion layer.
Claim 5
Dependent Claim
33 words
A light-emitting diode according to claim 1, wherein room-temperature lattice mismatch between each of the layers of the double hetero-junction and the GaAs substrate is not less than 0.085% and less than 0.140%.
Claim 6
Dependent Claim
25 words
A light-emitting diode according to claim 1, wherein an In mixed crystal ratio (1-y) in each of the layers of the double hetero-junction is 0.5045≦(1-y)≦0.5095.
Claim 7
Dependent Claim
58 words
A light-emitting diode according to claim 1, wherein the reflection layer is a lamination of two types of AlGaAs layers having different Al mixed crystal ratios, one of the AlGaAs layers having an Al mixed crystal ratio of 0.95 to 1 and the other of the AlGaAs layers having an Al mixed crystal ratio of 0.35 to 0.75.
Claim 8
Dependent Claim
117 words
An AlGaInP light-emitting diode, comprising: a GaAs substrate having an ohmic electrode on its rear surface, a reflection layer comprised of a lamination of multiple layers provided on the GaAs substrate, a compositional gradient layer provided on the reflection layer, a double hetero-junction light-emitting structure of (Al x Ga 1-x ) y In 1-y P provided on the compositional gradient layer, said light-emitting structure being comprised of an active layer between upper and lower cladding layers, with each of the layers being lattice matched to the GaAs substrate at an epitaxial growth temperature, a current diffusion layer formed of GaP provided on the double hetero-junction light-emitting structure, and an ohmic electrode provided on the current diffusion layer.
Claim 9
Dependent Claim
117 words
An AlGaInP light-emitting diode, comprising: a GaAs substrate having an ohmic electrode on its rear surface, a reflection layer comprised of a lamination of multiple layers provided on the GaAs substrate, a compositional gradient layer provided on the reflection layer, a double hetero-junction light-emitting structure of (Al x Ga 1-x ) y In 1-y P provided on the compositional gradient layer, said light-emitting structure being comprised of an active layer between upper and lower cladding layers, with each of the layers being lattice matched to the GaAs substrate at an epitaxial growth temperature, a current diffusion layer formed of GaP provided on the double hetero-junction light-emitting structure, and an ohmic electrode provided on the current diffusion layer.
Claim 10
Dependent Claim
33 words
A light-emitting diode according to claim 7, wherein room-temperature lattice mismatch between each of the layers of the double hetero-junction and the GaAs substrate is not less than 0.085% and less than 0.140%.
Claim 11
Dependent Claim
25 words
A light-emitting diode according to claim 7, wherein an In mixed crystal ratio (1-y) in each of the layers of the double hetero-junction is 0.5045≦(1-y)≦0.5095.
Claim 12
Dependent Claim
127 words
An AlGaInP light-emitting diode, comprising: a GaAs substrate having an ohmic electrode on its rear surface, a reflection layer comprised of a lamination of multiple layers provided on the GaAs substrate, a compositional gradient layer provided on the reflection layer, a double hetero-junction light-emitting structure of (Al x Ga 1-x ) y In 1-y P provided on the compositional gradient layer, said light-emitting structure being comprised of an active layer between upper and lower cladding layers, with each of the layers being lattice matched to the GaAs substrate at an epitaxial growth temperature, a compositional gradient layer provided on the double hetero-junction light-emitting structure, a current diffusion layer formed of GaP provided on the compositional gradient layer, and an ohmic electrode provided on the current diffusion layer.
Claim 13
Dependent Claim
127 words
An AlGaInP light-emitting diode, comprising: a GaAs substrate having an ohmic electrode on its rear surface, a reflection layer comprised of a lamination of multiple layers provided on the GaAs substrate, a compositional gradient layer provided on the reflection layer, a double hetero-junction light-emitting structure of (Al x Ga 1-x ) y In 1-y P provided on the compositional gradient layer, said light-emitting structure being comprised of an active layer between upper and lower cladding layers, with each of the layers being lattice matched to the GaAs substrate at an epitaxial growth temperature, a compositional gradient layer provided on the double hetero-junction light-emitting structure, a current diffusion layer formed of GaP provided on the compositional gradient layer, and an ohmic electrode provided on the current diffusion layer.
Claim 14
Dependent Claim
33 words
A light-emitting diode according to claim 10, wherein room-temperature lattice mismatch between each of the layers of the double hetero-junction and the GaAs substrate is not less than 0.085% and less than 0.140%.
Claim 15
Dependent Claim
25 words
A light-emitting diode according to claim 10, wherein an In mixed crystal ratio (1-y) in each of the layers of the double hetero-junction is 0.5045≦(1-y)≦0.5095.
References Cited (Backward Citations)
JPH03171679A
Cited
US5008718A
Cited
US5300788A
Cited
US5453405A
Cited
US5403916A
Cited
JPH0715038A
Cited
US5537433A
Cited
US5442203A
Cited
US5625202A
Cited
US5661742A
Cited
US5565694A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-04-27 | 2001-10-27 | 2002-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-04-27 | 2005-10-27 | 2006-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-04-27 | 2009-10-27 | 2010-04-28 | $7700.00 | Window Closed / Lapsed |