US5744402A
Expired / Lapsed
US
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Method of manufacturing semiconductor devices
Assignee: Toshiba Corp
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Filing: 1995-11-29
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Granted: 1998-04-28
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Expires: 2015-11-29
Abstract
Abstract In a method of removing a polymer and the leavings of the resist pattern that have adhered during dry etching to a film formed on a semiconductor substrate, the etched film undergoes plasma etching with the resist patter as a mask. Next, the resist pattern is removed by O 2 plasma ashing and then the surface of the substrate is washed with pure water. Thereafter, with the substrate heated to 40° C. or higher, the surface of the substrate is exposed to HF vapor and then the surface of the substrate is rinsed with pure water. With this method, the polymer and the leavings of the resist pattern that have adhered to the etched film can be removed easily.
Inventors
- 👤 Yuji Fukazawa
- 👤 Kazuhiko Takase
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:27
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/273
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
99 words
A method of manufacturing semiconductor devices, comprising the steps of: forming a conductive film on a silicon oxide film provided on a semiconductor substrate; forming a resist pattern on the conductive film formed on the silicon oxide film; selectively dry-etching the conductive film with the resist pattern as a mask to form a pattern of the conductive film; and heating the semiconductor substrate to 40° C. or higher and exposing the conductive film pattern to HF vapor, to thereby remove reaction products adhered in the dry-etching step to an exposed surface portion of the pattern of the conductive film.
Claim 2
Independent Claim
99 words
A method of manufacturing semiconductor devices, comprising the steps of: forming a conductive film on a silicon oxide film provided on a semiconductor substrate; forming a resist pattern on the conductive film formed on the silicon oxide film; selectively dry-etching the conductive film with the resist pattern as a mask to form a pattern of the conductive film; and heating the semiconductor substrate to 40° C. or higher and exposing the conductive film pattern to HF vapor, to thereby remove reaction products adhered in the dry-etching step to an exposed surface portion of the pattern of the conductive film.
Claim 3
Dependent Claim
32 words
A method of manufacturing a semiconductor device according to claim 1, wherein the conductive film is made of silicon or one selected from these metals: Al, W, Ti, Mo, Cu, and Si.
Claim 4
Independent Claim
106 words
A method of manufacturing semiconductor devices comprising the steps of: forming a resist pattern on a first film provided on a semiconductor substrate; selectively dry-etching the first film with the resist pattern as a mask to form a pattern of the first film; removing the resist pattern by ashing; heating the semiconductor substrate to 40° C. or higher and exposing at least the surface of the first film to HF vapor; and forming a second film on at least the first film pattern, wherein the first film is made of an alloy containing silicon or one selected from these metals: Al, W, Ti, Mo, and Cu.
Claim 5
Independent Claim
106 words
A method of manufacturing semiconductor devices comprising the steps of: forming a resist pattern on a first film provided on a semiconductor substrate; selectively dry-etching the first film with the resist pattern as a mask to form a pattern of the first film; removing the resist pattern by ashing; heating the semiconductor substrate to 40° C. or higher and exposing at least the surface of the first film to HF vapor; and forming a second film on at least the first film pattern, wherein the first film is made of an alloy containing silicon or one selected from these metals: Al, W, Ti, Mo, and Cu.
Claim 6
Dependent Claim
33 words
A method of manufacturing semiconductor devices according to claim 2, wherein the step of forming the conductive film pattern is to form a pattern of silicon or the selected one of the metals.
Claim 7
Dependent Claim
35 words
A method of manufacturing semiconductor devices according to claim 3, wherein the step of forming the first film pattern is to form an alloy pattern of an alloy containing the selected one of the metals.
Claim 8
Independent Claim
105 words
A method of manufacturing semiconductor devices comprising the steps of: forming a resist pattern on a first film made of silicon or one selected from the metals Al, W, Ti, Mo, and Cu, provided on a semiconductor substrate; selectively dry-etching the first film with the resist pattern as a mask to form a pattern of the first film; removing the resist pattern by ashing; heating the semiconductor substrate to 40° C. or higher and exposing at least the surface of the first film pattern to HF vapor; and forming a second film on at least the first film pattern to constitute an insulating film thereon.
Claim 9
Independent Claim
105 words
A method of manufacturing semiconductor devices comprising the steps of: forming a resist pattern on a first film made of silicon or one selected from the metals Al, W, Ti, Mo, and Cu, provided on a semiconductor substrate; selectively dry-etching the first film with the resist pattern as a mask to form a pattern of the first film; removing the resist pattern by ashing; heating the semiconductor substrate to 40° C. or higher and exposing at least the surface of the first film pattern to HF vapor; and forming a second film on at least the first film pattern to constitute an insulating film thereon.
Claim 10
Independent Claim
108 words
A method of manufacturing semiconductor devices comprising the steps of: forming a resist pattern on a first film made of an alloy containing silicon or one selected from the metals Al, W, Ti, Mo, and Cu, provided on a semiconductor substrate; selectively dry-etching the first film with the resist pattern as a mask to form a pattern of the first film; removing the resist pattern by ashing; heating the semiconductor substrate to 40° C. or higher and exposing at least the surface of the first film pattern to HF vapor; and forming a second film on at least the first film pattern to constitute an insulating film thereon.
Claim 11
Independent Claim
108 words
A method of manufacturing semiconductor devices comprising the steps of: forming a resist pattern on a first film made of an alloy containing silicon or one selected from the metals Al, W, Ti, Mo, and Cu, provided on a semiconductor substrate; selectively dry-etching the first film with the resist pattern as a mask to form a pattern of the first film; removing the resist pattern by ashing; heating the semiconductor substrate to 40° C. or higher and exposing at least the surface of the first film pattern to HF vapor; and forming a second film on at least the first film pattern to constitute an insulating film thereon.
Claim 12
Independent Claim
127 words
A method of manufacturing semiconductor devices, comprising the steps of: forming a first conductive film on a first silicon oxide film provided on a semiconductor substrate; forming a second silicon oxide film on the first conductive film; forming a resist pattern on the second silicon oxide film; selective dry-etching the second silicon oxide film with the resist pattern as a mask to form a contact hole in the second silicon oxide film leading to the first conductive film; and heating the semiconductor substrate to 40° C. or higher and exposing a surface portion of the first conductive film which is in the contact hole to HF vapor, to thereby remove reaction products adhered to the exposed surface portion of the first conductive film in the dry-etching step.
Claim 13
Independent Claim
127 words
A method of manufacturing semiconductor devices, comprising the steps of: forming a first conductive film on a first silicon oxide film provided on a semiconductor substrate; forming a second silicon oxide film on the first conductive film; forming a resist pattern on the second silicon oxide film; selective dry-etching the second silicon oxide film with the resist pattern as a mask to form a contact hole in the second silicon oxide film leading to the first conductive film; and heating the semiconductor substrate to 40° C. or higher and exposing a surface portion of the first conductive film which is in the contact hole to HF vapor, to thereby remove reaction products adhered to the exposed surface portion of the first conductive film in the dry-etching step.
Claim 14
Dependent Claim
24 words
A method of manufacturing semiconductor devices according to claim 8, further comprising a step of removing the resist pattern prior to the heating step.
Claim 15
Dependent Claim
23 words
A method of manufacturing semiconductor devices according to claim 8, further comprising a step of removing the resist pattern after the heating step.
Claim 16
Dependent Claim
33 words
A method of manufacturing semiconductor devices according to claim 9, further comprising a step of forming a second conductive film on the first conductive film via the contact hole, after the heating step.
Claim 17
Dependent Claim
33 words
A method of manufacturing semiconductor devices according to claim 10, further comprising a step of forming a second conductive film on the first conductive film via the contact hole, after the removing step.
Claim 18
Dependent Claim
31 words
A method of manufacturing semiconductor devices according to claim 11, wherein the steps from the dry etching step to the second conductive film forming step are performed without contact with air.
Claim 19
Dependent Claim
30 words
A method of manufacturing semiconductor devices according to claim 12, wherein steps from the dry etching step to the second conductive film forming step are performed without contact with air.
Claim 20
Dependent Claim
34 words
A method of manufacturing semiconductor devices according to claim 8, wherein the first conductive film is made from an alloy containing silicon or one selected from these metals: Al, W, Ti, Mo, and Cu.
Claim 21
Dependent Claim
31 words
A method of manufacturing semiconductor devices according to claim 12, wherein the second conductive film is made of silicon or one selected from these metals: Al, W, Ti, Mo, and Cu.
Claim 22
Dependent Claim
34 words
A method of manufacturing semiconductor devices according to claim 12, wherein the second conductive film is made of an alloy containing silicon or one selected from these metals: Al, W, Ti, Mo, and Cu.
Claim 23
Dependent Claim
65 words
A method of manufacturing semiconductor devices according to claim 12, wherein the second conductive film is made from silicon or one selected from these metals: Al, W, Ti, Mo, and Cu, and the step of forming the second conductive film is the step of forming a film of silicon or the selected metal on the first conductive film and the inside of the contact hole.
Claim 24
Dependent Claim
66 words
A method of manufacturing semiconductor devices according to claim 12, wherein the second conductive film is made of an alloy containing silicon or one selected from these metals: Al, W, Ti, Mo, and Cu, and the step of forming the second conductive film is the step of forming a film of the selected alloy on the first conductive film and the outside of the contact hole.
Claim 25
Dependent Claim
30 words
A method of manufacturing semiconductor devices according to claim 11, wherein the second conductive film is made of silicon or one selected from these metals: Al, W, Ti, and Cu.
Claim 26
Dependent Claim
34 words
A method of manufacturing semiconductor devices according to claim 11, wherein the second conductive film is made of an alloy containing silicon or one selected from these metals: Al, W, Ti, Mo, and Cu.
Claim 27
Dependent Claim
65 words
A method of manufacturing semiconductor devices according to claim 11, wherein the second conductive film is made of silicon or one selected from these metals: Al, W, Ti, Mo, and Cu, and the step of forming the second conductive film is the step of forming a film of silicon or the selected metal on the first conductive film and the inside of the contact hole.
Claim 28
Dependent Claim
66 words
A method of manufacturing semiconductor devices according to claim 11, wherein the second conductive film is made of an alloy containing silicon or one selected from these metals: Al, W, Ti, Mo, and Cu, and the step of forming the second conductive film is the step of forming a film of the selected alloy on the first conductive film and the inside of the contact hole.
References Cited (Backward Citations)
JPS61134015A
Cited
JPS63102251A
Cited
US5017513A
Cited
JPH04123427A
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US5200361A
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US5323046A
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US5200360A
Cited
JPH06216082A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-04-27 | 2001-10-27 | 2002-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-04-27 | 2005-10-27 | 2006-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-04-27 | 2009-10-27 | 2010-04-28 | $7700.00 | Window Closed / Lapsed |