US5741734A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capacitor structure for semiconductor device and method of manufacturing the same
Assignee: SK Hynix Inc
•
Filing: 1996-01-26
•
Granted: 1998-04-21
•
Expires: 2016-01-26
Abstract
Abstract A capacitor structure of a semiconductor device which includes a semiconductor substrate, a first metal layer formed on the substrate, and a second metal layer formed on the first metal layer. The first metal layer has a nitridation-treated film along its outer surface. A tungsten film having a rugged surface is formed on the entire outer surfaces of the first and second metal layers. Because of the nitridation-treated film along the first layer, the tungsten film will be uniformly distributed along the first and second metals. A thin dielectric film is then formed on the surface of the tungsten, followed by a third metal layer formed on the dielectric film.
Inventors
- 👤 Young Jong Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:21
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; Y; Y10; Y10S; Y10S148/00; Y10S148/138
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
83 words
A method of manufacturing a capacitor of a semiconductor device, comprising the steps of: preparing a semiconductor substrate; forming first and second metal layers on said semiconductor substrate, sequentially; forming a nitridation-treated film on the outer side of said first metal layer; forming a tungsten film having a rugged surface on the outer surface of said first and second metal layers; forming a dielectric film on said rugged surface of said tungsten film; and forming a third metal layer on said dielectric film.
Claim 2
Independent Claim
83 words
A method of manufacturing a capacitor of a semiconductor device, comprising the steps of: preparing a semiconductor substrate; forming first and second metal layers on said semiconductor substrate, sequentially; forming a nitridation-treated film on the outer side of said first metal layer; forming a tungsten film having a rugged surface on the outer surface of said first and second metal layers; forming a dielectric film on said rugged surface of said tungsten film; and forming a third metal layer on said dielectric film.
Claim 3
Dependent Claim
26 words
A method of manufacturing a capacitor of a semiconductor device as claimed in claim 1, wherein said first metal layer is formed of a Ti material.
Claim 4
Dependent Claim
26 words
A method of manufacturing a capacitor of a semiconductor device as claimed in claim 1, wherein said second metal layer is formed of a TiN material.
Claim 5
Dependent Claim
26 words
A method of manufacturing a capacitor of a semiconductor device as claimed in claim 1, wherein said second metal layer is formed of a refractory metal.
Claim 6
Dependent Claim
26 words
A method of manufacturing a capacitor of a semiconductor device as claimed in claim 1, wherein said second metal layer is formed of a refractory silicide.
Claim 7
Independent Claim
134 words
A method of manufacturing a capacitor of a semiconductor device, comprising the steps of: preparing a semiconductor substrate wherein an impurity diffused region is formed; forming an insulating film having a contact hole on said semiconductor substrate; forming a semiconductor layer in said contact hole to be electrically connected with said impurity diffused region; sequentially forming and patterning a first metal layer and a second metal layer on said insulating film including the upper portion of said semiconductor layer; forming a nitridation-treated film on the outer side of said first metal layer; forming a tungsten film having a rugged surface on the outer surface of said first metal layer and said second metal layer; forming a dielectric film on the surface of said tungsten film; and forming an upper electrode on said dielectric film.
Claim 8
Independent Claim
134 words
A method of manufacturing a capacitor of a semiconductor device, comprising the steps of: preparing a semiconductor substrate wherein an impurity diffused region is formed; forming an insulating film having a contact hole on said semiconductor substrate; forming a semiconductor layer in said contact hole to be electrically connected with said impurity diffused region; sequentially forming and patterning a first metal layer and a second metal layer on said insulating film including the upper portion of said semiconductor layer; forming a nitridation-treated film on the outer side of said first metal layer; forming a tungsten film having a rugged surface on the outer surface of said first metal layer and said second metal layer; forming a dielectric film on the surface of said tungsten film; and forming an upper electrode on said dielectric film.
Claim 9
Dependent Claim
56 words
A method of manufacturing a capacitor of a semiconductor device as claimed in claim 6, wherein said step of forming a nitridation-treated film further comprises a step of RTN-treating the outer side of said layer at a temperature in the range from about 500° C. to about 1000° C., under NH 3 or N 2 atmosphere.
Claim 10
Dependent Claim
59 words
A method of manufacturing a capacitor of a semiconductor device as claimed in claim 6, wherein said step of forming a nitridation-treated film further comprises a step of treating the outer side of said first metal layer with a plasma NH 3 or N 2 at a temperature in the range from about 250° C. to about 600° C.
Claim 11
Dependent Claim
30 words
A method of manufacturing a capacitor of a semiconductor device as claimed in claim 6, wherein said nitridation-treated film is formed to a thickness of about 50 A or more.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-04-20 | 2001-10-20 | 2002-04-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-04-20 | 2005-10-20 | 2006-04-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-04-20 | 2009-10-20 | 2010-04-21 | $7700.00 | Window Closed / Lapsed |