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US5736192A
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Embedded electroconductive layer and method for formation thereof
Assignee: Fujitsu Ltd
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Filing: 1996-06-07
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Granted: 1998-04-07
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Expires: 2016-06-07
Abstract
Abstract An embedded electroconductive layer is disclosed which comprises an opening part or a depressed part 3 formed in an insulating film 2 on a substrate 1, a barrier layer for covering the opening part or the depressed part, a metal growth promoting layer 5 on the barrier layer, and an electroconductive layer 6 embedded in the opening part or the depressed part via the barrier layer 4 and the metal growth promoting layer 5.
Inventors
- 👤 Shigeru Okamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:25
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0641; C23C14/58; C23C14/5846; C23C14/5853; C23C16/00; C23C16/06; C23C16/18; C23C16/22; C23C16/30; C23C16/34; H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/047; H10W20/048; H10W20/052; H10W20/0526; H10W20/054; H10W20/056; H10W20/40; H10W20/41; H10W20/42; H10W20/425
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
87 words
A method for the formation of an embedded electroconductive layer, comprising steps of: forming an opening part or a depressed part in an insulating layer; forming a ground layer for covering said opening part or said depressed part; reducing the surface of said ground layer by exposing said ground layer to a reducing gas; and growing an electroconductive layer by a vapor phase chemical growth method using a metallic precursor thereby embedding said electroconductive layer in said opening part or said depressed part via said ground layer.
Claim 2
Independent Claim
87 words
A method for the formation of an embedded electroconductive layer, comprising steps of: forming an opening part or a depressed part in an insulating layer; forming a ground layer for covering said opening part or said depressed part; reducing the surface of said ground layer by exposing said ground layer to a reducing gas; and growing an electroconductive layer by a vapor phase chemical growth method using a metallic precursor thereby embedding said electroconductive layer in said opening part or said depressed part via said ground layer.
Claim 3
Dependent Claim
43 words
The method according to claim 1, wherein said step of exposing said ground layer to said reducing gas is part of a step of elevating the temperature of said electroconductive layer to the temperature for starting the growth by chemical vapor phase growth.
Claim 4
Dependent Claim
22 words
The method according to claim 1, wherein said ground layer is wholly oxidized prior to said step of reducing said ground layer.
Claim 5
Dependent Claim
13 words
The method according to claim 1, wherein said reducing gas is dimethyl hydrazine.
Claim 6
Dependent Claim
13 words
The method according to claim 1, wherein said reducing gas is monomethyl hydrazine.
Claim 7
Dependent Claim
13 words
The method according to claim 1, wherein said reducing gas is a silane.
Claim 8
Dependent Claim
15 words
The method according to claim 1, wherein said precursor is a metal complex of Cu.
Claim 9
Dependent Claim
15 words
The method according to claim 1, wherein said precursor is a metal compound of Al.
Claim 10
Dependent Claim
24 words
The method according to claim 1, wherein said precursor is a mixture of a metal complex of Cu with a metal compound of Al.
References Cited (Backward Citations)
US4990997A
Cited
US5070036A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-04-06 | 2001-10-06 | 2002-04-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-04-06 | 2005-10-06 | 2006-04-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-04-06 | 2009-10-06 | 2010-04-07 | $7700.00 | Window Closed / Lapsed |