Patent US5733709A successfully refreshed from Google Patents.
US5733709A
Expired / Lapsed
US
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Semiconductor processing method of forming a field effect transistor
Assignee: Micron Technology Inc
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Filing: 1996-10-28
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Granted: 1998-03-31
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Expires: 2016-10-28
Abstract
Abstract A method of forming a field effect transistor relative to a semiconductor substrate, where the transistor has a gate which defines a resultant lateral expanse of semiconductive material therebeneath for provision of a transistor channel region, includes a) providing a conductive gate layer over a semiconductor substrate; b) patterning the conductive gate layer into a first gate block, the first gate block having a first lateral expanse which is greater than the resultant lateral expanse; c) providing an insulating dielectric layer over the first gate block; d) providing a patterned layer of photoresist over the first gate block and the insulating dielectric layer, the patterned photoresist comprising a photoresist block positioned over and within the first lateral expanse of the first gate block; e) with the patterned photoresist in place, etching the insulating dielectric layer selectively relative to the first gate block; f) after etching the insulating dielectric layer and with the patterned photoresist in place, etching the first gate block selectively relative to the insulating dielectric layer to define the transistor gate having a second lateral expanse adjacent the substrate which is equal to the resultant lateral expanse; and g) providing a conductivity enhancing impurity into the substrate adjacent the transistor gate. The invention has particular utility in fabrication of field effect transistors having an elevated source and an elevated drain. The invention also contemplates products produced by the above process.
Inventors
- 👤 Kirk Prall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:29
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/069; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/027; H10D30/0275; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/259; H10W20/056; H10W20/057; H10W20/071; H10W20/074; H10W20/076; H10W20/081; H10W20/089
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
104 words
A method of forming a transistor gate, comprising the following steps: forming a gate block outwardly of a semiconductor material, the gate block having a first cross-sectional area; forming an insulative block over the gate block, the insulative block having a second cross-sectional area, the second cross-sectional area being less than the first cross-sectional area; removing a portion of the gate block not covered by the insulative block to form a transistor gate having the second cross-sectional area; and wherein the transistor gate and the insulative block comprise a co-extensive lateral periphery and further comprising forming an insulative spacer along the co-extensive lateral periphery.
Claim 2
Independent Claim
104 words
A method of forming a transistor gate, comprising the following steps: forming a gate block outwardly of a semiconductor material, the gate block having a first cross-sectional area; forming an insulative block over the gate block, the insulative block having a second cross-sectional area, the second cross-sectional area being less than the first cross-sectional area; removing a portion of the gate block not covered by the insulative block to form a transistor gate having the second cross-sectional area; and wherein the transistor gate and the insulative block comprise a co-extensive lateral periphery and further comprising forming an insulative spacer along the co-extensive lateral periphery.
Claim 3
Independent Claim
117 words
A method of forming a transistor gate, comprising the following steps: forming a gate block outwardly of a semiconductor material, the gate block having a first cross-sectional area; forming a first material layer over the gate block; providing a photoresist block over the first material layer, the photoresist block having a second cross-sectional area, the second cross-sectional area being less than the first cross-sectional area; after providing the photoresist block, removing a portion of the first material layer to form a first material block having a second cross-sectional area and to expose a portion of the gate block; and removing the exposed portion of the gate block to define a transistor gate having the second cross-sectional area.
Claim 4
Independent Claim
117 words
A method of forming a transistor gate, comprising the following steps: forming a gate block outwardly of a semiconductor material, the gate block having a first cross-sectional area; forming a first material layer over the gate block; providing a photoresist block over the first material layer, the photoresist block having a second cross-sectional area, the second cross-sectional area being less than the first cross-sectional area; after providing the photoresist block, removing a portion of the first material layer to form a first material block having a second cross-sectional area and to expose a portion of the gate block; and removing the exposed portion of the gate block to define a transistor gate having the second cross-sectional area.
Claim 5
Dependent Claim
15 words
The method of claim 2 wherein the first material layer comprises an insulating dielectric material.
Claim 6
Independent Claim
85 words
A method of forming a transistor gate, comprising the following steps: forming a gate block outwardly of a semiconductor material, the gate block having a first lateral expanse; forming a stack over the gate block, the stack comprising a photoresist block and an insulative block, the stack not covering a portion of the gate block; and removing the uncovered portion of the gate block to define a transistor gate having a second lateral expanse, the second lateral expanse being less than the first lateral expanse.
Claim 7
Independent Claim
85 words
A method of forming a transistor gate, comprising the following steps: forming a gate block outwardly of a semiconductor material, the gate block having a first lateral expanse; forming a stack over the gate block, the stack comprising a photoresist block and an insulative block, the stack not covering a portion of the gate block; and removing the uncovered portion of the gate block to define a transistor gate having a second lateral expanse, the second lateral expanse being less than the first lateral expanse.
Claim 8
Dependent Claim
30 words
The method of claim 4 wherein the transistor gate and the insulative block comprise a co-extensive lateral periphery and further comprising forming an insulative spacer along the co-extensive lateral periphery.
Claim 9
Independent Claim
164 words
A method of forming a field effect transistor, comprising the following steps: forming a gate block outwardly of a semiconductor material, the gate block having a first cross-sectional area; forming a first material layer over the gate block; providing a photoresist block over the first material layer, the photoresist block having a second cross-sectional area, the second cross-sectional area being less than the first cross-sectional area; after providing the photoresist block, removing a portion of the first material layer to form a first material block having a second cross-sectional area and to expose a portion of the gate block; removing the exposed portion of the gate block to form: a) a transistor gate; and b) a pair of contact openings adjacent the transistor gate; and filling the pair of contact openings with an electrically conductive plugging material to define an elevated source and an elevated drain adjacent the transistor gate; the transistor gate, elevated source and elevated drain together comprising a field effect transistor.
Claim 10
Independent Claim
164 words
A method of forming a field effect transistor, comprising the following steps: forming a gate block outwardly of a semiconductor material, the gate block having a first cross-sectional area; forming a first material layer over the gate block; providing a photoresist block over the first material layer, the photoresist block having a second cross-sectional area, the second cross-sectional area being less than the first cross-sectional area; after providing the photoresist block, removing a portion of the first material layer to form a first material block having a second cross-sectional area and to expose a portion of the gate block; removing the exposed portion of the gate block to form: a) a transistor gate; and b) a pair of contact openings adjacent the transistor gate; and filling the pair of contact openings with an electrically conductive plugging material to define an elevated source and an elevated drain adjacent the transistor gate; the transistor gate, elevated source and elevated drain together comprising a field effect transistor.
Claim 11
Dependent Claim
51 words
The method of claim 6 wherein the electrically conductive plugging material is conductively doped with a conductivity enhancing impurity, the method further comprising providing the conductivity enhancing impurity adjacent the transistor gate by out-diffusing the conductivity enhancing impurity from the electrically conductive plugging material into the substrate adjacent the transistor gate.
Claim 12
Independent Claim
180 words
A method of forming a field effect transistor relative to a semiconductor substrate, the transistor having a transistor gate which defines a resultant lateral expanse of semiconductive material therebeneath for provision of a transistor channel region, the method comprising the following steps: providing a conductive gate layer over the semiconductor substrate; patterning the conductive gate layer into a first gate block, the first gate block having a first lateral expanse which is greater than the resultant lateral expanse; providing an insulating dielectric layer over the first gate block; providing a layer of patterned photoresist over the first gate block and the insulating dielectric layer, the patterned photoresist being positioned over and within the first lateral expanse of the first gate block; after providing the layer of patterned photoresist, etching the insulating dielectric layer; after etching the insulating dielectric layer, etching the first gate block to define the transistor gate having a second lateral expanse adjacent the semiconductor substrate which is equal to the resultant lateral expanse; and providing a conductivity enhancing impurity into the semiconductor substrate adjacent the transistor gate.
Claim 13
Independent Claim
180 words
A method of forming a field effect transistor relative to a semiconductor substrate, the transistor having a transistor gate which defines a resultant lateral expanse of semiconductive material therebeneath for provision of a transistor channel region, the method comprising the following steps: providing a conductive gate layer over the semiconductor substrate; patterning the conductive gate layer into a first gate block, the first gate block having a first lateral expanse which is greater than the resultant lateral expanse; providing an insulating dielectric layer over the first gate block; providing a layer of patterned photoresist over the first gate block and the insulating dielectric layer, the patterned photoresist being positioned over and within the first lateral expanse of the first gate block; after providing the layer of patterned photoresist, etching the insulating dielectric layer; after etching the insulating dielectric layer, etching the first gate block to define the transistor gate having a second lateral expanse adjacent the semiconductor substrate which is equal to the resultant lateral expanse; and providing a conductivity enhancing impurity into the semiconductor substrate adjacent the transistor gate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-03-30 | 2001-09-29 | 2002-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-30 | 2005-09-29 | 2006-03-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-03-30 | 2009-09-29 | 2010-03-31 | $7700.00 | Window Closed / Lapsed |