Vapor growth apparatus and vapor growth method capable of growing good productivity

Claim 1

A vapor growth apparatus for growing a compound semiconductor layer on a surface of a substrate maintained at a specified temperature in a growth chamber by alternately supplying a cation material gas and an anion material gas and reacting the gases, wherein the growth chamber has a cylindrical portion which extends in a direction from an upstream side to a downstream side and an end plate which closes an upstream end portion of the cylindrical portion, the end plate has in specified portions thereof a material gas supply inlet for supplying the cation material gas into the cylindrical portion and a material gas supply inlet for supplying the anion material gas into the cylindrical portion, and further comprising exhaust means for discharging gas inside the cylindrical portion from a downstream side of the cylindrical portion, a substrate holder provided between the upstream side and the downstream side of the cylindrical portion and having a substrate holding surface. gas separation means for forming a plurality of material gas supply areas where the material gases are independently supplied to the substrate holding surface by separating flow paths of the material gases extending from the material gas supply inlets to the substrate holding surface, and drive means for rotating the substrate holder with the substrate set on the substrate holding surface around a center line of the cylindrical portion, wherein the substrate holder has a cylindrical outer surface centered about the center line and a non-cylindrical interior surface whereby the substrate holder has a polygonal transverse section, the substrate holding surface being provided on the interior surface of the substrate holder.