US5728630A
Expired / Lapsed
US
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Method of making a semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1996-11-05
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Granted: 1998-03-17
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Expires: 2016-11-05
Abstract
Abstract In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO) 2 (R 2 Si 2 O 3 ) n H 2 . As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.
Inventors
- 👤 Hiroyuki Nishimura
- 👤 Hiroshi Adachi
- 👤 Etsushi Adachi
- 👤 Shigeyuki Yamamoto
- 👤 Shintaro Minami
- 👤 Shigeru Harada
- 👤 Toru Tajima
- 👤 Kimio Hagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:02
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6926; B; B32; B32B; B32B27/00; B32B27/06; B32B27/08; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6548; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10W20/093; H10W20/096; H10W20/40; H10W20/45; H10W20/48; H10P14/63; H10P14/6326; H10P14/6342
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
259 words
A method of fabrication of a semiconductor device, comprising the steps of: forming a first wiring layer on which a given pattern is formed; forming an interlayer insulating film including a flattening film made of a silicone ladder resin on the first wiring layer in order to absorb irregularity attributable to the first wiring layer; providing a contact hole through the interlayer insulating layer over said first wiring layer at a selected position on the wiring layer, thereby providing access to said first wiring forming a second wiring layer of a predetermined pattern on the interlayer insulating layer; and connecting the first wiring layer to the second wiring layer through the contact hole provided through the interlayer insulating layer; wherein said step of forming an interlayer insulating film including a flattening film comprises: forming a resinous solution by adding a resin material to at least one organic solvent selected from the group consisting of an aromatic compound, an alcohol, an ester, an ether, and a ketone, thereby obtaining a resinous solution having a resin concentration of 5 to 30 wt % said resin material containing at least one silicone ladder polymer of the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2 wherein n is an integer which is sufficient for a ladder polymer having a weight average molecular weight within the range of 2,000 to 100,000; and R is any one of hydrogen, lower alkyl or phenyl; applying said solution to said first wiring layer to form a coated film; and forming said flattening film by thermosetting the coated film.
Claim 2
Independent Claim
259 words
A method of fabrication of a semiconductor device, comprising the steps of: forming a first wiring layer on which a given pattern is formed; forming an interlayer insulating film including a flattening film made of a silicone ladder resin on the first wiring layer in order to absorb irregularity attributable to the first wiring layer; providing a contact hole through the interlayer insulating layer over said first wiring layer at a selected position on the wiring layer, thereby providing access to said first wiring forming a second wiring layer of a predetermined pattern on the interlayer insulating layer; and connecting the first wiring layer to the second wiring layer through the contact hole provided through the interlayer insulating layer; wherein said step of forming an interlayer insulating film including a flattening film comprises: forming a resinous solution by adding a resin material to at least one organic solvent selected from the group consisting of an aromatic compound, an alcohol, an ester, an ether, and a ketone, thereby obtaining a resinous solution having a resin concentration of 5 to 30 wt % said resin material containing at least one silicone ladder polymer of the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2 wherein n is an integer which is sufficient for a ladder polymer having a weight average molecular weight within the range of 2,000 to 100,000; and R is any one of hydrogen, lower alkyl or phenyl; applying said solution to said first wiring layer to form a coated film; and forming said flattening film by thermosetting the coated film.
Claim 3
Dependent Claim
65 words
The method of fabrication of a semiconductor according to claim 1, wherein the resinous solution contains a first silicone ladder polymer having a high molecular weight of 30,000 or more, and a second silicone ladder polymer which has a low molecular weight less than 30,000 and is 20 wt % or more with respect to said first silicone ladder polymer having the high molecular weight.
Claim 4
Dependent Claim
19 words
The method of fabrication of a semiconductor device according to claim 1, wherein the resinous solution contains hydrogen silsesquioxane.
Claim 5
Dependent Claim
44 words
The method of fabrication of a semiconductor device according to claim 1, wherein the resinous solution contains a solution in which a silicone polymer contining hydroxy groups in side chains is dissolved to a concentration in the range of 5 to 40 wt %.
Claim 6
Dependent Claim
35 words
The method of fabrication of a semiconductor device according to claim 1, wherein the resinous solution contains a silane coupling agent in the range of 150 to 100,000 ppm with respect to its resin content.
Claim 7
Dependent Claim
26 words
The method of fabrication of a semiconductor device according to claim 1, wherein the carbon content of the resinous solution is set at a predetermined value.
Claim 8
Dependent Claim
28 words
The method of fabrication of a semiconductor device according to claim 1, comprising the additional step of modifying a surface of the coated resin film by decarbonization processing.
Claim 9
Dependent Claim
43 words
The method of fabrication of a semiconductor device according to claim 1, comprising the additional step of forming an inorganic film made of silicon oxide on at least any one of an upper layer and a lower layer of the coated resin film.
Claim 10
Dependent Claim
60 words
The method of fabrication of a semiconductor device according to claim 1, wherein said resin material contains one or more silicone ladder polymers and 20 to 60% by weight hydrogen silsesquioxane in order to adjust the carbon atom content of the flattening film to set an etching rate for the production of the interlayer insulating layer at a predetermined extent.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-03-16 | 2001-09-15 | 2002-03-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-16 | 2005-09-15 | 2006-03-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-03-16 | 2009-09-15 | 2010-03-17 | $7700.00 | Window Closed / Lapsed |