Patent US5725973A successfully refreshed from Google Patents.
US5725973A
Expired / Lapsed
US
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Photo mask and method for manufacturing same
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-04-16
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Granted: 1998-03-10
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Expires: 2016-04-16
Abstract
Abstract A photo mask and method for manufacturing the same increase the capacitance of a capacitor by improving the proximity effect of a mask pattern. The photo mask includes a transparent substrate, an opaque mask pattern for defining an optical transmission area on the substrate, and an optical transmittance control film pattern for suppressing proximity effect in the optical transmission area. The proximity effect is suppressed by forming an optical transmittance control film pattern in the transmission area between the individual portions of the opaque mask pattern, so that the mask pattern shape can be exactly transferred onto a substrate.
Inventors
- 👤 Woo-Sung Han
- 👤 Chang-jin Sohn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 18:18
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70425; G03F7/70433; G03F7/70441; G03F1/00; G03F1/26; G03F1/32; G03F1/36; G03F7/20; G03F7/2051; G03F7/2059; G03F7/2061
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
95 words
A clear-field photo mask for transferring a mask pattern onto a semiconductor wafer in a photolithographic procedure using a positive photoresist, comprising: a transparent substrate; an opaque mask element formed on the substrate, wherein the opaque mask element blocks light to define an optical transmission area adjoining edges of the opaque mask element that intersect to form a corner; and an optical transmittance control pattern formed in a portion of the optical transmission area near said corner of said opaque mask element, for reducing rounding of the shadow of said corner during said photolithographic procedure.
Claim 2
Dependent Claim
95 words
A clear-field photo mask for transferring a mask pattern onto a semiconductor wafer in a photolithographic procedure using a positive photoresist, comprising: a transparent substrate; an opaque mask element formed on the substrate, wherein the opaque mask element blocks light to define an optical transmission area adjoining edges of the opaque mask element that intersect to form a corner; and an optical transmittance control pattern formed in a portion of the optical transmission area near said corner of said opaque mask element, for reducing rounding of the shadow of said corner during said photolithographic procedure.
Claim 3
Dependent Claim
54 words
The photo mask according to claim 1, wherein the optical transmittance control film pattern is formed from material selected from the group consisting of: spin-on-glass (SOG), photoresist (PR), silicon oxide (SiO 2 ), aluminum (Al), silicon nitride (Si 3 N 4 ), a polysilicon, titanium (Ti), titanium nitride (TiN), chromium (Cr) and tungsten (W).
Claim 4
Dependent Claim
110 words
A clear-field photo mask for transferring a mask pattern onto a semiconductor wafer in a photolithographic procedure using a positive photo-resist, comprising: a transparent substrate; a rectangular opaque mask element formed on the substrate, wherein the rectangular opaque mask element selectively blocks light to define an optical transmission area surrounding the edges of the rectangular opaque mask element, which edges meet at corners of said rectangular opaque mask element; and, an optical transmittance control pattern formed in portions of the optical transmission area near the corners of the rectangular opaque mask element, for reducing rounding of corners of the shadow of said rectangular opaque mask element during said photolithographic procedure.
Claim 5
Dependent Claim
110 words
A clear-field photo mask for transferring a mask pattern onto a semiconductor wafer in a photolithographic procedure using a positive photo-resist, comprising: a transparent substrate; a rectangular opaque mask element formed on the substrate, wherein the rectangular opaque mask element selectively blocks light to define an optical transmission area surrounding the edges of the rectangular opaque mask element, which edges meet at corners of said rectangular opaque mask element; and, an optical transmittance control pattern formed in portions of the optical transmission area near the corners of the rectangular opaque mask element, for reducing rounding of corners of the shadow of said rectangular opaque mask element during said photolithographic procedure.
Claim 6
Dependent Claim
144 words
A clear-field photo mask for transferring a mask pattern onto a semiconductor wafer in a photolithographic procedure using a positive photo-resist, comprising: a transparent substrate; an opaque mask pattern formed on the substrate, wherein the opaque mask pattern includes an array of rectangular shaped masking portions arranged in rows and columns for selectively blocking light, such that rectangular shaped masking portions adjacent to each other in each row are separated by a respective columnar optical transmission area, and such that rectangular shaped masking portions adjacent to each other in each column are separated by a respective row-wise optical transmission area; and an optical transmittance control pattern for suppressing rounding of the corners of shadows of said rectangular shaped masking portions during said photolithography, respective portions of the optical transmittance control pattern being formed at the intersections of respective columnar and row-wise optical transmission areas.
Claim 7
Dependent Claim
144 words
A clear-field photo mask for transferring a mask pattern onto a semiconductor wafer in a photolithographic procedure using a positive photo-resist, comprising: a transparent substrate; an opaque mask pattern formed on the substrate, wherein the opaque mask pattern includes an array of rectangular shaped masking portions arranged in rows and columns for selectively blocking light, such that rectangular shaped masking portions adjacent to each other in each row are separated by a respective columnar optical transmission area, and such that rectangular shaped masking portions adjacent to each other in each column are separated by a respective row-wise optical transmission area; and an optical transmittance control pattern for suppressing rounding of the corners of shadows of said rectangular shaped masking portions during said photolithography, respective portions of the optical transmittance control pattern being formed at the intersections of respective columnar and row-wise optical transmission areas.
Claim 8
Dependent Claim
50 words
The photo mask according to claim 4, wherein the optical transmittance control pattern is formed beyond the intersections of respective columnar and row-wise optical transmission areas to extend along at least one of the columnar and row-wise optical transmission areas proximate at least one of the rectangular shaped masking portions.
Claim 9
Dependent Claim
42 words
The photo mask according to claim 4, wherein the optical transmittance control pattern is formed beyond the intersections of respective columnar and row-wise optical transmission areas to extend along the columnar and row-wise optical transmission areas proximate the rectangular shaped masking portions.
Claim 10
Dependent Claim
237 words
A clear-field photo mask for transferring a mask pattern onto a semiconductor wafer in a photolithographic procedure using a positive photo-resist, comprising: a transparent substrate; an opaque mask pattern formed on the substrate, wherein the opaque mask pattern includes an array of rectangular shaped masking portions arranged in rows and columns for selectively blocking light, such that rectangular shaped masking portions adjacent to each other in each row are separated by a respective columnar optical transmission area, and such that rectangular shaped masking portions adjacent to each other in each column are separated by a respective row-wise optical transmission area; and means for suppressing rounding of the corners of shadows of said rectangular shaped masking portions at each intersection of one said respective columnar optical transmission area and one said row-wise optical transmission area during said photolithography, which means includes: a first optical transmittance control pattern having a respective portion covering each intersection of one said respective columnar optical transmission area and one said row-wise optical transmission area and covering portions of that one said respective columnar optical transmission area extending from each side of that said intersection, and a second optical transmittance control pattern having a respective portion covering each intersection of one said respective columnar optical transmission area and one said row-wise optical transmission area and covering portions of that one said respective row-wise optical transmission area extending from each side of that said intersection.
Claim 11
Dependent Claim
237 words
A clear-field photo mask for transferring a mask pattern onto a semiconductor wafer in a photolithographic procedure using a positive photo-resist, comprising: a transparent substrate; an opaque mask pattern formed on the substrate, wherein the opaque mask pattern includes an array of rectangular shaped masking portions arranged in rows and columns for selectively blocking light, such that rectangular shaped masking portions adjacent to each other in each row are separated by a respective columnar optical transmission area, and such that rectangular shaped masking portions adjacent to each other in each column are separated by a respective row-wise optical transmission area; and means for suppressing rounding of the corners of shadows of said rectangular shaped masking portions at each intersection of one said respective columnar optical transmission area and one said row-wise optical transmission area during said photolithography, which means includes: a first optical transmittance control pattern having a respective portion covering each intersection of one said respective columnar optical transmission area and one said row-wise optical transmission area and covering portions of that one said respective columnar optical transmission area extending from each side of that said intersection, and a second optical transmittance control pattern having a respective portion covering each intersection of one said respective columnar optical transmission area and one said row-wise optical transmission area and covering portions of that one said respective row-wise optical transmission area extending from each side of that said intersection.
Claim 12
Independent Claim
69 words
A method of manufacturing a photo mask, comprising the steps of: selectively forming an opaque mask pattern which defines an optical transmission area on a substrate; forming an optical transmittance control film over the opaque mask pattern and substrate; and patterning the optical transmittance control film such that portions of the optical transmittance control film are disposed in the optical transmission area between edges of the opaque mask pattern.
Claim 13
Independent Claim
69 words
A method of manufacturing a photo mask, comprising the steps of: selectively forming an opaque mask pattern which defines an optical transmission area on a substrate; forming an optical transmittance control film over the opaque mask pattern and substrate; and patterning the optical transmittance control film such that portions of the optical transmittance control film are disposed in the optical transmission area between edges of the opaque mask pattern.
Claim 14
Dependent Claim
77 words
The method of manufacturing a photo mask according to claim 8, wherein the step of patterning the optical transmittance control film further comprising the steps of: forming a photoresist pattern over selected portions of the optical transmittance control film, said selected portions corresponding to the optical transmission area defined by the edges of the opaque mask pattern; etching away portions of the optical transmittance control film not covered by the photoresist pattern; and, removing the photoresist pattern.
Claim 15
Dependent Claim
67 words
The method of manufacturing a photo mask according to claim 8, wherein the opaque mask pattern is formed of chromium and the optical transmittance control film pattern is formed from material selected from the group consisting of: spin-on-glass (SOG), photoresist (PR), silicon oxide (SiO 2 ), aluminum (Al), silicon nitride (Si 3 N 4 ), a polysilicon, titanium (Ti), titanium nitride (TiN), chromium (Cr) and tungsten (W).
Claim 16
Independent Claim
77 words
A method of manufacturing a photo mask, comprising the steps of: forming an opaque mask pattern which defines an optical transmission area on a substrate; forming an etch-stopping film on the opaque mask pattern and the substrate; forming an optical transmittance control film on the etch--stopping film; and patterning the optical transmittance control film such that portions of the optical transmittance control film are disposed in the optical transmission area between edges of the opaque mask pattern.
Claim 17
Independent Claim
77 words
A method of manufacturing a photo mask, comprising the steps of: forming an opaque mask pattern which defines an optical transmission area on a substrate; forming an etch-stopping film on the opaque mask pattern and the substrate; forming an optical transmittance control film on the etch--stopping film; and patterning the optical transmittance control film such that portions of the optical transmittance control film are disposed in the optical transmission area between edges of the opaque mask pattern.
Claim 18
Dependent Claim
41 words
The method for manufacturing a photo mask according to claim 11, wherein the etch-stopping film is formed from a material selected from the group consisting of: spin-on-glass (SOG), silicon oxide (SiO 2 ) and silicon nitride (Si 3 N 4 ).
Claim 19
Dependent Claim
43 words
The method for manufacturing a photo mask according to claim 11, wherein the optical transmittance control film pattern is formed from a material selected from the group consisting of: aluminum (Al), a polysilicon, titanium (Ti), titanium nitride (TiN), chromium (Cr) and tungsten (W).
Claim 20
Dependent Claim
77 words
The method of manufacturing a photo mask according to claim 11, wherein the step of patterning the optical transmittance control film further comprises the steps of: forming a photoresist pattern over selected portions of the optical transmittance control film, said selected portions corresponding to the optical transmission area defined by the edges of the opaque mask pattern; etching away portions of the optical transmittance control film not covered by the photoresist pattern; and, removing the photoresist pattern.
Claim 21
Independent Claim
93 words
A method for manufacturing a photo mask, comprising the steps of: forming an opaque mask pattern defining an optical transmission area on a substrate; forming a photoresist film over the opaque mask pattern and substrate; exposing the optical transmission area on the substrate by patterning the photoresist film; forming an optical transmittance control film over the entire surface of the resultant structure; and forming an optical transmittance control film pattern over the optical transmission area between edges of the opaque mask pattern by etching away the patterned photoresist film using a lift-off process.
Claim 22
Independent Claim
93 words
A method for manufacturing a photo mask, comprising the steps of: forming an opaque mask pattern defining an optical transmission area on a substrate; forming a photoresist film over the opaque mask pattern and substrate; exposing the optical transmission area on the substrate by patterning the photoresist film; forming an optical transmittance control film over the entire surface of the resultant structure; and forming an optical transmittance control film pattern over the optical transmission area between edges of the opaque mask pattern by etching away the patterned photoresist film using a lift-off process.
Claim 23
Independent Claim
49 words
A method for manufacturing a semiconductor device, comprising the steps of: forming an array of opaque mask patterns on a substrate which define a grid-shaped optical transmission area between adjacent opaque mask pattern; and, forming an optical transmittance control fill over a portion of the grid-shaped optical transmission area.
Claim 24
Independent Claim
49 words
A method for manufacturing a semiconductor device, comprising the steps of: forming an array of opaque mask patterns on a substrate which define a grid-shaped optical transmission area between adjacent opaque mask pattern; and, forming an optical transmittance control fill over a portion of the grid-shaped optical transmission area.
Claim 25
Dependent Claim
58 words
The method according to claim 16, wherein respective opaque mask patterns are rectangularly shaped and the resulting grid-shaped optical transmission area comprises columns and rows separating adjacent opaque mask patterns, and wherein the optical transmittance control film is formed over a portion of the grid-shaped optical transmission area defined by the respective intersections of the columns and rows.
Claim 26
Dependent Claim
36 words
The method according to claim 17, wherein the optical transmittance control film is formed beyond the intersections of the columns and rows to extend along at least one of the column and row optical transmission areas.
Claim 27
Dependent Claim
32 words
The method according to claim 17, wherein the optical transmittance control film is formed beyond the intersections of columns and rows to extend along both the column and row optical transmission areas.
References Cited (Backward Citations)
US4902899A
Cited
US5208124A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-03-09 | 2001-09-08 | 2002-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-03-09 | 2005-09-08 | 2006-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-03-09 | 2009-09-08 | 2010-03-10 | $7700.00 | Window Closed / Lapsed |