Abstract A charge coupled device (CCD) image sensor and more particularly a wiring of charge transfer electrodes of a CCD image sensor which is made suitable for improving the charge transfer efficiency of vertical charge coupled devices (VCCDs) thereof. The CCD image sensor includes: a plurality of photoelectric conversion regions for converting light incident to a semiconductor substrate into image signal charges; a plurality of VCCD regions for transmitting image signal charges generated in the plurality of photoelectric conversion regions in a vertical direction; a plurality of transfer gate electrodes for transmitting the image signal charges generated in the plurality of photoelectric conversion regions in four phases in the vertical direction; an insulation film for insulating the plurality of transfer gate electrodes; first metal layers formed over the plurality of photoelectric conversion regions and the plurality of VCCD regions for intercepting light; and a second metal layer formed over the plurality of VCCD regions for connecting between transfer gate electrodes the same clock signals applied thereto within one VCCD and shielding light incident to the VCCD region.
A charge coupled device image sensor comprising: a plurality of photoelectric conversion regions for converting lights incident to a semiconductor substrate into image signal charges; a plurality of vertical charge coupled device regions for transmitting image signal charges generated in the plurality of photoelectric conversion regions in vertical direction; a plurality of transfer gate electrodes for transmitting the image signal charges generated in the plurality of photoelectric conversion regions in four phases in vertical direction; an insulation film for insulating the plurality of transfer gate electrodes; first metal layers formed over regions excluding the plurality of photo electric conversion regions and the plurality of vertical charge coupled device regions for shielding lights; and, a second metal layer formed over the plurality of vertical charge coupled device regions for connecting between transfer gate electrodes the same clock signals applied thereto within one vertical charge coupled device and shielding lights incident to the vertical charge coupled device regions.
Claim 2
Dependent Claim
156 words
A charge coupled device image sensor comprising: a plurality of photoelectric conversion regions for converting lights incident to a semiconductor substrate into image signal charges; a plurality of vertical charge coupled device regions for transmitting image signal charges generated in the plurality of photoelectric conversion regions in vertical direction; a plurality of transfer gate electrodes for transmitting the image signal charges generated in the plurality of photoelectric conversion regions in four phases in vertical direction; an insulation film for insulating the plurality of transfer gate electrodes; first metal layers formed over regions excluding the plurality of photo electric conversion regions and the plurality of vertical charge coupled device regions for shielding lights; and, a second metal layer formed over the plurality of vertical charge coupled device regions for connecting between transfer gate electrodes the same clock signals applied thereto within one vertical charge coupled device and shielding lights incident to the vertical charge coupled device regions.