US5723383A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor substrate treatment method
Assignee: NTT Inc
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Filing: 1995-03-17
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Granted: 1998-03-03
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Expires: 2015-03-17
Abstract
Abstract According to a semiconductor substrate treatment method, a surface or vicinity of a semiconductor substrate is deactivated by exposing the semiconductor substrate to a plasma atmosphere in which a gas containing at least hydrogen atoms is excited. A treatment is performed on the deactivated substrate surface. The treated substrate surface is activated by heating the semiconductor substrate.
Inventors
- 👤 Toshihiko Kosugi
- 👤 Hiromu Ishii
- 👤 Yoshinobu Arita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 07:29
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/12; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10P95/00; H10P95/94
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
118 words
A semiconductor substrate treatment method comprising the steps of: in one of a silicon semiconductor substrate and a polysilicon semiconductor substrate, said substrate having a top surface, wherein said substrate is doped, electrically deactivating a portion of a dopant of said semiconductor substrate by exposing said semiconductor substrate to a plasma atmosphere in which a gas containing at least hydrogen atoms is excited; after the step of electrically deactivating a portion of said dopant, treating said substrate surface, wherein said step of treating said substrate surface includes one of the steps of cleaning said substrate surface, etching said substrate surface, and forming a conductive layer on said substrate surface; and electrically activating said dopant by heating said substrate.
Claim 2
Dependent Claim
118 words
A semiconductor substrate treatment method comprising the steps of: in one of a silicon semiconductor substrate and a polysilicon semiconductor substrate, said substrate having a top surface, wherein said substrate is doped, electrically deactivating a portion of a dopant of said semiconductor substrate by exposing said semiconductor substrate to a plasma atmosphere in which a gas containing at least hydrogen atoms is excited; after the step of electrically deactivating a portion of said dopant, treating said substrate surface, wherein said step of treating said substrate surface includes one of the steps of cleaning said substrate surface, etching said substrate surface, and forming a conductive layer on said substrate surface; and electrically activating said dopant by heating said substrate.
Claim 3
Dependent Claim
52 words
The method of claim 1, further comprising the steps of forming a dielectric layer on said semiconductor substrate and patterning said dielectric layer to form a hole, in which said semiconductor substrate is exposed, in a portion of said dielectric layer, wherein the deactivating step is performed after the hole formation step.
Claim 4
Dependent Claim
70 words
The method of claim 1, further comprising the steps of: forming a dielectric layer on said semiconductor substrate; and patterning said dielectric layer to form a hole, in which said semiconductor substrate is exposed, in a portion of said dielectric layer, and wherein said deactivating step is performed between said dielectric layer forming step and said hole forming step, and said treatment step is performed after said hole forming step.
Claim 5
Dependent Claim
25 words
The method of claim 1, wherein the step of cleaning said substrate surface includes cleaning said semiconductor substrate surface with a solution containing hydrofluoric acid.
Claim 6
Dependent Claim
18 words
The method of claim 1, wherein the etching step of said substrate surface is a dry etching step.
Claim 7
Dependent Claim
44 words
The method of claim 1, wherein the step of forming a conductive layer on substrate surface includes forming a conductive layer on a substrate surface by chemical vapor deposition using a gas containing at least a compound of a metal and a halogen element.
Claim 8
Dependent Claim
23 words
The method of claim 6, wherein said metal is tungsten and said conductive layer formed on said substrate surface is a tungsten layer.
Claim 9
Dependent Claim
24 words
The method of claim 1, wherein the step of forming a conductive layer on said substrate surface includes forming a titanium layer by sputtering.
Claim 10
Dependent Claim
43 words
The method of claim 1, wherein the step of deactivating a portion of said dopant of said semiconductor substrate includes exposing said semiconductor substrate to a plasma atmosphere formed by exciting an atmosphere containing at least nitrogen atoms in addition to hydrogen atoms.
Claim 11
Dependent Claim
40 words
The method of claim 1, wherein the step of deactivating a portion of said semiconductor substrate includes exposing said semiconductor substrate to a plasma atmosphere formed by exciting an atmosphere containing at least oxygen atoms in addition to hydrogen atoms.
Claim 12
Dependent Claim
104 words
A semiconductor substrate treatment method comprising: in one of a silicon semiconductor substrate and a polysilicon semiconductor substrate having a surface, wherein said substrate is doped, forming a dielectric layer on said semiconductor substrate surface and patterning said dielectric layer to form a hole, in which said semiconductor substrate is exposed, in a portion of said dielectric layer; electrically deactivating a portion of a dopant of said exposed substrate by exposing said semiconductor substrate surface to a plasma atmosphere in which a gas containing at least hydrogen atoms is excited; cleaning said substrate surface; and forming a conductive layer on said exposed substrate surface.
Claim 13
Dependent Claim
104 words
A semiconductor substrate treatment method comprising: in one of a silicon semiconductor substrate and a polysilicon semiconductor substrate having a surface, wherein said substrate is doped, forming a dielectric layer on said semiconductor substrate surface and patterning said dielectric layer to form a hole, in which said semiconductor substrate is exposed, in a portion of said dielectric layer; electrically deactivating a portion of a dopant of said exposed substrate by exposing said semiconductor substrate surface to a plasma atmosphere in which a gas containing at least hydrogen atoms is excited; cleaning said substrate surface; and forming a conductive layer on said exposed substrate surface.
Claim 14
Dependent Claim
85 words
A semiconductor substrate treatment method comprising the steps of: forming a dielectric layer on a semiconductor substrate; deactivating a substrate surface below said dielectric layer by exposing said semiconductor substrate to a plasma atmosphere in which a gas containing at least hydrogen atoms is excited; patterning said dielectric layer to form a hole, in which a surface of said semiconductor substrate is exposed, in a portion of said dielectric layer; cleaning said exposed substrate surface; and forming a conductive film on said exposed substrate surface.
Claim 15
Dependent Claim
85 words
A semiconductor substrate treatment method comprising the steps of: forming a dielectric layer on a semiconductor substrate; deactivating a substrate surface below said dielectric layer by exposing said semiconductor substrate to a plasma atmosphere in which a gas containing at least hydrogen atoms is excited; patterning said dielectric layer to form a hole, in which a surface of said semiconductor substrate is exposed, in a portion of said dielectric layer; cleaning said exposed substrate surface; and forming a conductive film on said exposed substrate surface.
References Cited (Backward Citations)
US4960732A
Cited
US5281546A
Cited
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