Abstract The accuracy of an active pixel sensor cell is increased by utilizing a reset diode in lieu of the reset transistor that is conventionally used to reset the voltage on the photodiode of the cell. The reset diode, which is largely unaffected by 1/f noise, consistently resets the photodiode to a substantially constant voltage as opposed to the reset transistor which varies the reset voltage on the photodiode across integration periods due to the effect of 1/f noise. In the present invention, the photodiode is formed by forming a well region of a second conductivity type in a substrate of a first conductivity type. The reset diode is then formed by forming a reset region of the first conductivity type in the well region.
A method for converting light energy into a pixel signal with an active pixel sensor cell formed in a semiconductor substrate of a first conductivity type, wherein the active pixel sensor cell includes: a well region of a second conductivity type formed in the substrate; a reset region of the first conductivity type formed in the well region; a buffer transistor having a gate connected to the well region; and a row select transistor connected to the buffer transistor, the row select transistor having a gate, the method comprising the steps of: applying a first voltage to the substrate; resetting the well region to a voltage which is greater than the first voltage; and applying a read voltage to the gate of the row select transistor for a predetermined time a predefined time after the well region is reset.
Claim 2
Independent Claim
139 words
A method for converting light energy into a pixel signal with an active pixel sensor cell formed in a semiconductor substrate of a first conductivity type, wherein the active pixel sensor cell includes: a well region of a second conductivity type formed in the substrate; a reset region of the first conductivity type formed in the well region; a buffer transistor having a gate connected to the well region; and a row select transistor connected to the buffer transistor, the row select transistor having a gate, the method comprising the steps of: applying a first voltage to the substrate; resetting the well region to a voltage which is greater than the first voltage; and applying a read voltage to the gate of the row select transistor for a predetermined time a predefined time after the well region is reset.
Claim 3
Dependent Claim
35 words
The method of claim 1 wherein the resetting step includes the step of applying a second voltage to the reset region for a predefined time, wherein the second voltage is greater than the first voltage.