US5721171A
Expired / Lapsed
US
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Method for forming controllable surface enhanced three dimensional objects
Assignee: Micron Technology Inc
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Filing: 1996-02-29
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Granted: 1998-02-24
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Expires: 2016-02-29
Abstract
Abstract An embodiment of the present invention develops a process for controlling the grain size of a Hemi-Spherical Grained (HSG) silicon film by the steps of: performing a controlled implant of impurities into an amorphous silicon film; providing silicon seeding sites onto the surface of the amorphous silicon film; heat treating the amorphous silicon film, impregnated with the impurities and its surface having silicon seeding sites thereon, to cause HSG formation. The implanting of the impurities into the amorphous material is controlled to place the impurities at a desired depth to thereby control the grain size of the HSG silicon.
Inventors
- 👤 Er-Xuan Ping
- 👤 Randhir P. S. Thakur
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:40
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10D1/716
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
72 words
A process for controlling the size of three dimensional objects formed from crystallizable amorphous material, said process comprising the steps of: performing an implant of impurities at a depth into a crystallizable amorphous material; wherein the size of said three dimensional objects is relative to said depth of said impurities; heat treating said amorphous material impregnated with said impurities to form said three dimensional objects; wherein said process steps are performed ex-situ.
Claim 2
Dependent Claim
72 words
A process for controlling the size of three dimensional objects formed from crystallizable amorphous material, said process comprising the steps of: performing an implant of impurities at a depth into a crystallizable amorphous material; wherein the size of said three dimensional objects is relative to said depth of said impurities; heat treating said amorphous material impregnated with said impurities to form said three dimensional objects; wherein said process steps are performed ex-situ.
Claim 3
Dependent Claim
23 words
The process as recited in claim 1, wherein the surface of said amorphous material is cleaned prior to said step of heat treating.
Claim 4
Dependent Claim
16 words
The process as recited in claim 1, wherein said amorphous material comprises an amorphous silicon film.
Claim 5
Dependent Claim
16 words
The process as recited in claim 3, wherein said film comprises a Hemi-Spherical Grain (HSG) film.
Claim 6
Dependent Claim
18 words
The process as recited in claim 1, wherein said step of heat treating comprises a rapid thermal anneal.
Claim 7
Dependent Claim
17 words
The process as recited in claim 1, wherein said step of heat treating comprises a furnace anneal.
Claim 8
Dependent Claim
54 words
A process for forming a film comprising controllable, surface enhanced, three dimensional objects, said process comprising the steps of: performing a controlled implant of impurities into a crystallizable amorphous material; heat treating said amorphous material impregnated with said impurities to cause formation of said three dimensional objects; wherein said process steps are performed ex-situ.
Claim 9
Dependent Claim
54 words
A process for forming a film comprising controllable, surface enhanced, three dimensional objects, said process comprising the steps of: performing a controlled implant of impurities into a crystallizable amorphous material; heat treating said amorphous material impregnated with said impurities to cause formation of said three dimensional objects; wherein said process steps are performed ex-situ.
Claim 10
Dependent Claim
23 words
The process as recited in claim 7, wherein the surface of said amorphous material is cleaned prior to said step of heat treating.
Claim 11
Dependent Claim
16 words
The process as recited in claim 7, whereto said amorphous material comprises an amorphous silicon film.
Claim 12
Dependent Claim
49 words
The process as recited in claim 7, wherein said controlled implant comprises implanting said impurities into said amorphous material at a depth to thereby control the size of the controllable surface enhanced three dimensional objects formed, wherein the implanting conditions are sufficient to place said impurities at said depth.
Claim 13
Dependent Claim
16 words
The process as recited in claim 7, wherein said film comprises a Hemi-Spherical Grain (HSG) film.
Claim 14
Dependent Claim
18 words
The process as recited in claim 7, wherein said step of heat treating comprises a rapid thermal anneal.
Claim 15
Dependent Claim
17 words
The process as recited in claim 7, wherein said step of heat treating comprises a furnace anneal.
Claim 16
Dependent Claim
82 words
A process for forming a film comprising controllable, surface enhanced, three dimensional objects, said process comprising the steps of: performing a controlled implant of impurities into a crystallizable amorphous material; providing seeding sites, of a material that is chemically similar to said amorphous material, onto the surface of said amorphous material; heat treating said amorphous material impregnated with said impurities and its surface having seeding sites thereon, to cause formation of said three dimensional objects; wherein said process steps are performed ex-situ.
Claim 17
Dependent Claim
82 words
A process for forming a film comprising controllable, surface enhanced, three dimensional objects, said process comprising the steps of: performing a controlled implant of impurities into a crystallizable amorphous material; providing seeding sites, of a material that is chemically similar to said amorphous material, onto the surface of said amorphous material; heat treating said amorphous material impregnated with said impurities and its surface having seeding sites thereon, to cause formation of said three dimensional objects; wherein said process steps are performed ex-situ.
Claim 18
Dependent Claim
23 words
The process as recited in claim 14, wherein the surface of said amorphous material is cleaned prior to said step of heat treating.
Claim 19
Dependent Claim
16 words
The process as recited in claim 14, wherein said amorphous material comprises an amorphous silicon film.
Claim 20
Dependent Claim
12 words
The process as recited in claim 14, wherein said material comprises silicon.
Claim 21
Dependent Claim
49 words
The process as recited in claim 14, wherein said controlled implant comprises implanting said impurities into said amorphous material at a depth to thereby control the size of the controllable surface enhanced three dimensional objects formed, wherein the implanting conditions are sufficient to place said impurities at said depth.
Claim 22
Dependent Claim
16 words
The process as recited in claim 14, wherein said film comprises a Hemi-Spherical Grain (HSG) film.
Claim 23
Dependent Claim
18 words
The process as recited in claim 14, wherein said step of heat treating comprises a rapid thermal anneal.
Claim 24
Dependent Claim
17 words
The process as recited in claim 14, wherein said step of heat treating comprises a furnace anneal.
References Cited (Backward Citations)
US5385863A
Cited
US5486488A
Cited
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