US5719067A
Expired / Lapsed
US
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Trench transistor and method for making same
Assignee: Advanced Micro Devices Inc
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Filing: 1996-09-06
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Granted: 1998-02-17
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Expires: 2016-09-06
Abstract
Abstract A field effect transistor and method for making same in which a first source/drain impurity distribution is located at a first depth below an upper surface of the semiconductor substrate and a second source/drain impurity distribution is located at a second depth below the upper surface. In a presently preferred embodiment, the first depth is greater than the second depth such that the transistor includes a channel region having a vertical component. The channel region extends from the first source/drain impurity distribution to the second source/drain impurity distribution. The field effect transistor further includes a gate dielectric which is in contact with the channel region and a conductive gate structure in contact with the gate dielectric layer. The vertical component of the transistor channel length can be accurately controlled with plasma etch techniques. In this manner, the transistor channel length is not defined by a photolithography process and, therefore, dimensions smaller than the minimum feature size resolvable by a photolithography aligner can be achieved.
Inventors
- 👤 Mark I. Gardner
- 👤 Fred N. Hause
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:24
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/208; H10D; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/512; H10D64/513
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
244 words
A process of forming a transistor comprising: providing a semiconductor substrate, wherein said substrate comprises a first and a second isolation structure laterally disposed on either side of a transistor region of said semiconductor substrate; forming a channel trench in a channel trench region of said transistor region of semiconductor substrate, said channel trench comprising first and second trench sidewalls and a trench floor located a trench depth below an upper surface of said semiconductor substrate; introducing a first impurity distribution into a first source/drain region of said semiconductor substrate, wherein said first source/drain region comprises a portion of said semiconductor substrate below said transistor trench, and further wherein a peak concentration of said first impurity distribution is located at a first depth below said upper surface of said semiconductor substrate; forming a substantially uniform thickness gate dielectric layer on said trench sidewalls and said trench floor; forming a conductive gate structure laterally adjacent to and in contact with a vertical portion of said gate dielectric layer said; and introducing a second impurity distribution into a second source/drain region of said semiconductor substrate, wherein said second source/drain region comprises a portion of said semiconductor substrate exterior to said trench region and proximal to said upper surface of said semiconductor such that a peak concentration of said second impurity distribution is located at a second depth below said upper surface of said semiconductor substrate and wherein said first depth is greater than said second depth.
Claim 2
Dependent Claim
244 words
A process of forming a transistor comprising: providing a semiconductor substrate, wherein said substrate comprises a first and a second isolation structure laterally disposed on either side of a transistor region of said semiconductor substrate; forming a channel trench in a channel trench region of said transistor region of semiconductor substrate, said channel trench comprising first and second trench sidewalls and a trench floor located a trench depth below an upper surface of said semiconductor substrate; introducing a first impurity distribution into a first source/drain region of said semiconductor substrate, wherein said first source/drain region comprises a portion of said semiconductor substrate below said transistor trench, and further wherein a peak concentration of said first impurity distribution is located at a first depth below said upper surface of said semiconductor substrate; forming a substantially uniform thickness gate dielectric layer on said trench sidewalls and said trench floor; forming a conductive gate structure laterally adjacent to and in contact with a vertical portion of said gate dielectric layer said; and introducing a second impurity distribution into a second source/drain region of said semiconductor substrate, wherein said second source/drain region comprises a portion of said semiconductor substrate exterior to said trench region and proximal to said upper surface of said semiconductor such that a peak concentration of said second impurity distribution is located at a second depth below said upper surface of said semiconductor substrate and wherein said first depth is greater than said second depth.
Claim 3
Dependent Claim
18 words
The process of claim 1 wherein said first and second isolation structures comprise shallow trench isolation dielectric structures.
Claim 4
Dependent Claim
74 words
The process of claim 1, wherein the step of forming said channel trench comprises: depositing a sacrificial dielectric layer on said upper surface of said semiconductor substrate; depositing a photoresist layer on said sacrificial dielectric layer; patterning said sacrificial dielectric layer and said photoresist layer such that an upper surface of said trench region of said semiconductor substrate is exposed; and anisotropically etching said trench region of said semiconductor substrate with a chlorinated plasma.
Claim 5
Dependent Claim
24 words
The process of claim 3 wherein the step of depositing said sacrificial dielectric layer comprises chemically vapor depositing oxide formed from a TEOS source.
Claim 6
Dependent Claim
37 words
The process of claim 1 wherein the step of introducing said first impurity distribution comprises selectively implanting ions selected from the group consisting of phosphorous, arsenic, or boron into said first source/drain region of said semiconductor substrate.
Claim 7
Dependent Claim
23 words
The process of claim 1 wherein the step of forming said substantially uniform thickness gate dielectric layer comprises thermally oxidizing said semiconductor substrate.
Claim 8
Dependent Claim
61 words
The process of claim 1 wherein the step of forming said conductive gate structure comprises: depositing a substantially conformal conductive gate layer over a topography of said semiconductor substrate, such that said conductive gate layer comprises planar regions and vertical regions; and anisotropically etching said conformal conductive gate layer to clear said planar regions of said gate layer with minimum overetch.
Claim 9
Dependent Claim
47 words
The process of claim 7 wherein the step of depositing said conductive gate layer comprises: chemically vapor depositing polysilicon at a pressure less than approximately 2 torrs; and introducing impurities into said polysilicon such that a sheet resistivity of said polysilicon is less than approximately 500 Ω/sq.
Claim 10
Dependent Claim
36 words
The process of claim 1 wherein the step of introducing said second source/drain region comprises implanting ions selected from the group consisting of boron, phosphorous, and arsenic into said second source/drain region of said semiconductor substrate.
Claim 11
Dependent Claim
30 words
The process of claim 1, further comprising, prior to the step of introducing said second impurity distribution, depositing an implant displacement layer on an upper surface of said semiconductor substrate.
References Cited (Backward Citations)
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