Abstract A surface-emitting AlGaInP LED is disclosed. The manufacturing method comprises the steps of: (i) forming a buffer layer, a first type of AlGaInP cladding layer, a AlGaInP active layer, a second type of AlGaInP cladding layer, and a second type of contact layer on a first type of GaAs substrate; (ii) forming a conductive transparent electrode; (iii) by using photolithography and etching techniques, a first photoresist layer with a hole is formed on the middle above the transparent electrode; (iv) etching the portion of the transparent electrode and the second type of GaAs layer not covered by the photoresist layer until the second type of AlGaInP cladding layer; (v) forming a metal layer on the hole being etched to form a Schottky barrier; (vi) thermal annealed to thicken an native oxide formed between the metal layer and the second type of AlGaInP cladding layer to increase the Schottky barrier level; (vii) removing the first photoresist layer, and coating a back electrode on an opposite surface of the first type of GaAs substrate; (viii) employing the photolithography and etching techniques and a mask being used in the photolithography of step (iii) to form a second photoresist layer with a hole at the center thereof; and (ix) forming a second metal over the metal layer being formed on the second type of AlGaInP cladding layer at step (v). The Schottky barrier and the native oxide serve as a current-blocking layer, and the luminance of a light-emitting diode is improved.
A light-emitting diode comprising: a first type of GaAs substrate; a GaAs buffer layer formed on the first type of GaAs substrate; a first type of AlGaInP cladding layer formed on the GaAs buffer layer; an AlGaInP active layer formed on the first type of AlGaInP cladding layer; a second type of AlGaInP cladding layer formed on the AlGaInP active layer; a second type of contact layer formed on the second type of AlGaInP cladding layer; a transparent electrode formed on the second type of contact layer; a metal formed on a hole and contacting the second type of AlGaInP cladding layer to form a Schottky barrier, in which the hole is formed by a photolithography and etching process; a back electrode formed on the opposite side of the first type of GaAs substrate.
Claim 2
Dependent Claim
134 words
A light-emitting diode comprising: a first type of GaAs substrate; a GaAs buffer layer formed on the first type of GaAs substrate; a first type of AlGaInP cladding layer formed on the GaAs buffer layer; an AlGaInP active layer formed on the first type of AlGaInP cladding layer; a second type of AlGaInP cladding layer formed on the AlGaInP active layer; a second type of contact layer formed on the second type of AlGaInP cladding layer; a transparent electrode formed on the second type of contact layer; a metal formed on a hole and contacting the second type of AlGaInP cladding layer to form a Schottky barrier, in which the hole is formed by a photolithography and etching process; a back electrode formed on the opposite side of the first type of GaAs substrate.
Claim 3
Dependent Claim
37 words
The light-emitting diode as claimed in claim 1, further comprising: a native oxide, being formed between the second type of AlGaInP cladding layer and the metal while annealing the transparent electrode, to increase the Schottky barrier level.
Claim 4
Dependent Claim
16 words
The light-emitting diode as claimed in claim 1 wherein the transparent electrode is made of ZnO.
Claim 5
Dependent Claim
16 words
The light-emitting diode as claimed in claim 1 wherein the transparent electrode comprises indium tin oxide.
Claim 6
Dependent Claim
20 words
The light-emitting diode as claimed in claim 1 wherein the first type is n-type and the second type is p-type.
Claim 7
Dependent Claim
17 words
The light-emitting diode as claimed in claim 1 wherein the second type of contact layer comprises AlGaAs.
Claim 8
Dependent Claim
17 words
The light-emitting diode as claimed in claim 1 wherein the second type of contact layer comprises GaAs.