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US5714772A
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Method of manufacturing light converter with amorphous-silicon pin heterojunction diode
Assignee: National Science and Technology Council
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Filing: 1996-07-31
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Granted: 1998-02-03
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Expires: 2016-07-31
Abstract
Abstract A method of manufacturing a light converter with an LED and an amorphous-silicon pin heterojunction diode includes steps of a) preparing an LED structure on one side of a substrate as a light-emitting unit; b) forming a buffer layer on the other side of the substrate; and c) depositing a pin (positive type/intrinsic type/negative type) diode on the buffer layer as a light-absorbing unit this blue/red light converter, and the value of rise time obtained under 1 kΩ is 112.5 μsec. The present invention desirably lower the cost, simplify the preparation process, and avoids degrading features of a light converting unit by over-heating during the process of preparing the pin diode.
Inventors
- 👤 Yean-Kuen Fang
- 👤 Kuen-Hsien Lee
- 👤 Yaw-Jou Yang
- 👤 Lee-Ching Kuo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-10 02:02
CPC Classifications
H; H10; H10F; H10F55/00; H10F55/18; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F30/2235; H10F55/10; H10F55/15; H10F55/155
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
83 words
A light converter fabricated with an LED and an amorphous-silicon pin heterojunction diode comprising: an LED structure formed on one side of a substrate as a light-emitting unit for said light converter; a buffer layer formed on the other side of said substrate; and a positive type/intrinsic type/negative type (pin) amorphous structure formed on said buffer layer as a light-absorbing unit for said light converter, wherein said LED is made of a compound material selected from one of II-VI groups and III-V groups.
Claim 2
Dependent Claim
83 words
A light converter fabricated with an LED and an amorphous-silicon pin heterojunction diode comprising: an LED structure formed on one side of a substrate as a light-emitting unit for said light converter; a buffer layer formed on the other side of said substrate; and a positive type/intrinsic type/negative type (pin) amorphous structure formed on said buffer layer as a light-absorbing unit for said light converter, wherein said LED is made of a compound material selected from one of II-VI groups and III-V groups.
Claim 3
Dependent Claim
89 words
A light converter fabricated with an LED and an amorphous-silicon pin heterojunction diode comprising: an LED structure formed on one side of a substrate as a light-emitting unit for said light converter; a buffer layer formed on the other side of said substrate; a positive type/intrinsic type/negative type (pin) amorphous structure formed on said buffer layer as a light-absorbing unit for said light converter; and said buffer layer including an Au/Ge layer formed on the other side of said substrate; and an indium-tin-oxide layer attached on said Au/Ge layer.
Claim 4
Dependent Claim
89 words
A light converter fabricated with an LED and an amorphous-silicon pin heterojunction diode comprising: an LED structure formed on one side of a substrate as a light-emitting unit for said light converter; a buffer layer formed on the other side of said substrate; a positive type/intrinsic type/negative type (pin) amorphous structure formed on said buffer layer as a light-absorbing unit for said light converter; and said buffer layer including an Au/Ge layer formed on the other side of said substrate; and an indium-tin-oxide layer attached on said Au/Ge layer.
Claim 5
Dependent Claim
142 words
A light converter fabricated with an LED and an amorphous-silicon pin heterojunction diode comprising: an LED structure formed on one side of a substrate as a light-emitting unit for said light converter; a buffer layer formed on the other side of said substrate; a positive type/intrinsic type/negative type (pin) amorphous structure formed on said buffer layer as a light-absorbing unit for said light converter; and said LED is a red light emitting GaAsP LED having a structure of n-GaAs 1-x P x (X=0→0.4)/n-GaAs 1-x P x (X=0.4)/p-GaAs 1-x P x where X stands for an atomic proportion, X=0→0.4 means an atomic proportion ranging from 0 to 0.4, X=0.4 means said atomic proportion is 0.4 and said amorphous pin heterojunction diode has a structure of positive type amorphous SiC:HY/intrinsic type amorphous Si:H/negative type amorphous Si:H (p-a-SiC:H/i-a-Si:H/n-aSi:H) where said substrate is an n-GaAs substrate.
Claim 6
Dependent Claim
142 words
A light converter fabricated with an LED and an amorphous-silicon pin heterojunction diode comprising: an LED structure formed on one side of a substrate as a light-emitting unit for said light converter; a buffer layer formed on the other side of said substrate; a positive type/intrinsic type/negative type (pin) amorphous structure formed on said buffer layer as a light-absorbing unit for said light converter; and said LED is a red light emitting GaAsP LED having a structure of n-GaAs 1-x P x (X=0→0.4)/n-GaAs 1-x P x (X=0.4)/p-GaAs 1-x P x where X stands for an atomic proportion, X=0→0.4 means an atomic proportion ranging from 0 to 0.4, X=0.4 means said atomic proportion is 0.4 and said amorphous pin heterojunction diode has a structure of positive type amorphous SiC:HY/intrinsic type amorphous Si:H/negative type amorphous Si:H (p-a-SiC:H/i-a-Si:H/n-aSi:H) where said substrate is an n-GaAs substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-02-02 | 2001-08-04 | 2002-02-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-02-02 | 2005-08-04 | 2006-02-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-02-02 | 2009-08-04 | 2010-02-03 | $7700.00 | Window Closed / Lapsed |