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US5701167A
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US
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LCD having a peripheral circuit with TFTs having the same structure as TFTs in the display region
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1996-09-13
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Granted: 1997-12-23
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Expires: 2016-09-13
Abstract
Abstract An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided thereon a plurality of gate wires, a plurality of source (drain) wires, and a pixel matrix comprising thin film transistors, and a second substrate facing the first substrate, wherein, among the peripheral circuits having established on the first substrate and being connected to the matrix wirings for the X direction and the Y direction, only a part of said peripheral circuits is constructed from thin film semiconductor devices fabricated by the same process utilized for an active device, and the rest of the peripheral circuits is constructed from semiconductor chips. The liquid crystal display device according to the present invention is characterized by that the peripheral circuits are not wholly fabricated into thin film transistors, but only those portions having a simple device structure, or those composed of a small number of devices, or those comprising an IC not easily available commercially, or those comprising an expensive integrated circuit, are fabricated by thin film transistors. According to the present invention, an electro-optical device is provided at an increased production yield with a reduced production cost.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 10:15
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6746; H10D86/00; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/40; H10D86/441; H10D86/60; G02F1/13452; G02F1/136; G02F1/1362; G02F1/13624; G02F1/136245; G09; G09G; G09G2310/00; G09G2310/02; G09G2310/0264; G09G2310/0281
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
166 words
An electro-optical device comprising: a first substrate and a second substrate; an electro-optical modulating layer provided between said first and second substrates; a plurality of thin film transistors provided on said first substrate; a plurality of pixel electrodes provided on said first substrate, each of said pixel electrodes being connected to corresponding one of said thin film transistors at one of source and drain thereof; a plurality of column lines connected to gate terminals of said thin film transistors; a plurality of row lines, each being connected to corresponding one of said thin film transistors at the other of source and drain thereof; a thin film transistor provided on said first substrate in a peripheral circuit for supplying a signal to at least One of said plurality of thin film transistors; and a semiconductor chip mounted on said first substrate in said peripheral circuit, wherein said thin film transistor provided in said peripheral circuit has the same structure as said plurality of thin film transistors have.
Claim 2
Dependent Claim
166 words
An electro-optical device comprising: a first substrate and a second substrate; an electro-optical modulating layer provided between said first and second substrates; a plurality of thin film transistors provided on said first substrate; a plurality of pixel electrodes provided on said first substrate, each of said pixel electrodes being connected to corresponding one of said thin film transistors at one of source and drain thereof; a plurality of column lines connected to gate terminals of said thin film transistors; a plurality of row lines, each being connected to corresponding one of said thin film transistors at the other of source and drain thereof; a thin film transistor provided on said first substrate in a peripheral circuit for supplying a signal to at least One of said plurality of thin film transistors; and a semiconductor chip mounted on said first substrate in said peripheral circuit, wherein said thin film transistor provided in said peripheral circuit has the same structure as said plurality of thin film transistors have.
Claim 3
Dependent Claim
209 words
An electro-optical device comprising: a first substrate and a second substrate; an electro-optical modulating layer provided between said first and second substrates; a plurality of thin film transistors provided on said first substrate; a plurality of pixel electrodes provided on said first substrate, each of said pixel electrodes being connected to corresponding one of said thin film transistors at one of source and drain thereof; a plurality of column lines connected to gate terminals of said thin film transistors; a plurality of row lines, each being connected to corresponding one of said thin film transistors at the other of source and drain thereof; a thin film transistor provided on said first substrate in a peripheral circuit for supplying a signal to at least one of said plurality of thin film transistors; and a semiconductor chip mounted on said first substrate in said peripheral circuit, wherein said thin film transistor provided in said peripheral circuit has the same structure as said plurality of thin film transistors have, and wherein the sources and drains of said plurality of thin film transistors and a source and a drain of said thin film transistor provided in said peripheral circuit comprise a semiconductor having an oxygen concentration of 7×10 19 atoms·cm -3 or less.
Claim 4
Dependent Claim
209 words
An electro-optical device comprising: a first substrate and a second substrate; an electro-optical modulating layer provided between said first and second substrates; a plurality of thin film transistors provided on said first substrate; a plurality of pixel electrodes provided on said first substrate, each of said pixel electrodes being connected to corresponding one of said thin film transistors at one of source and drain thereof; a plurality of column lines connected to gate terminals of said thin film transistors; a plurality of row lines, each being connected to corresponding one of said thin film transistors at the other of source and drain thereof; a thin film transistor provided on said first substrate in a peripheral circuit for supplying a signal to at least one of said plurality of thin film transistors; and a semiconductor chip mounted on said first substrate in said peripheral circuit, wherein said thin film transistor provided in said peripheral circuit has the same structure as said plurality of thin film transistors have, and wherein the sources and drains of said plurality of thin film transistors and a source and a drain of said thin film transistor provided in said peripheral circuit comprise a semiconductor having an oxygen concentration of 7×10 19 atoms·cm -3 or less.
Claim 5
Dependent Claim
231 words
An electro-optical device comprising: a first substrate and a second substrate; an electro-optical modulating layer provided between said first and second substrates; a plurality of thin film transistors provided on said first substrate; a plurality of pixel electrodes provided on said first substrate, each of said pixel electrodes being connected to corresponding one of said thin film transistors at one of source and drain thereof; a plurality of column lines connected to gate terminals of said thin film transistors; a plurality of row lines, each being connected to corresponding one of said thin film transistors at the other of source and drain thereof; a thin film transistor provided on said first substrate in a peripheral circuit for supplying a signal to at least one of said plurality of thin film transistors; and a semiconductor chip mounted on said first substrate in said peripheral circuit, wherein said thin film transistor provided in said peripheral circuit has the same structure as said plurality of thin film transistors have, and wherein the sources and drains of said plurality of thin film transistors and a source and a drain of said thin film transistor provided in said peripheral circuit comprise a semiconductor having an oxygen concentration of 7×10 19 atoms·cm -3 or less, and wherein channel forming regions of said plurality of thin film transistors have an oxygen concentration of 5×10 21 atoms·cm -3 .
Claim 6
Dependent Claim
231 words
An electro-optical device comprising: a first substrate and a second substrate; an electro-optical modulating layer provided between said first and second substrates; a plurality of thin film transistors provided on said first substrate; a plurality of pixel electrodes provided on said first substrate, each of said pixel electrodes being connected to corresponding one of said thin film transistors at one of source and drain thereof; a plurality of column lines connected to gate terminals of said thin film transistors; a plurality of row lines, each being connected to corresponding one of said thin film transistors at the other of source and drain thereof; a thin film transistor provided on said first substrate in a peripheral circuit for supplying a signal to at least one of said plurality of thin film transistors; and a semiconductor chip mounted on said first substrate in said peripheral circuit, wherein said thin film transistor provided in said peripheral circuit has the same structure as said plurality of thin film transistors have, and wherein the sources and drains of said plurality of thin film transistors and a source and a drain of said thin film transistor provided in said peripheral circuit comprise a semiconductor having an oxygen concentration of 7×10 19 atoms·cm -3 or less, and wherein channel forming regions of said plurality of thin film transistors have an oxygen concentration of 5×10 21 atoms·cm -3 .
Claim 7
Dependent Claim
96 words
An active matrix device comprising: a substrate having an active display region and a peripheral circuit region; an electrode arrangement formed on said substrate; a matrix of thin film transistors formed in the display region of the substrate; and a peripheral circuit formed on the substrate in said peripheral circuit region for driving said matrix of thin film transistors, said peripheral circuit including thin film transistors and at least one IC chip, wherein the thin film transistors in the display region have essentially the same cross-sectional structure as the thin film transistors of the peripheral circuit.
Claim 8
Dependent Claim
96 words
An active matrix device comprising: a substrate having an active display region and a peripheral circuit region; an electrode arrangement formed on said substrate; a matrix of thin film transistors formed in the display region of the substrate; and a peripheral circuit formed on the substrate in said peripheral circuit region for driving said matrix of thin film transistors, said peripheral circuit including thin film transistors and at least one IC chip, wherein the thin film transistors in the display region have essentially the same cross-sectional structure as the thin film transistors of the peripheral circuit.
Claim 9
Dependent Claim
100 words
An active matrix device comprising: a substrate having an active display region and a peripheral circuit region; an electrode arrangement formed on said substrate; a matrix of thin film transistors formed in the display region of the substrate; and a peripheral circuit formed on the substrate in said peripheral circuit region for driving said matrix of thin film transistors, said peripheral circuit including thin film transistors in a CMOS configuration and at least one IC chip, wherein the thin film transistors in the display region have essentially the same cross-sectional structure as the thin film transistors of the peripheral circuit.
Claim 10
Dependent Claim
100 words
An active matrix device comprising: a substrate having an active display region and a peripheral circuit region; an electrode arrangement formed on said substrate; a matrix of thin film transistors formed in the display region of the substrate; and a peripheral circuit formed on the substrate in said peripheral circuit region for driving said matrix of thin film transistors, said peripheral circuit including thin film transistors in a CMOS configuration and at least one IC chip, wherein the thin film transistors in the display region have essentially the same cross-sectional structure as the thin film transistors of the peripheral circuit.
Claim 11
Dependent Claim
122 words
An active matrix device comprising: a substrate having an active display region and a peripheral circuit region; an electrode arrangement formed on said substrate; a matrix of thin film transistors formed in the display region of the substrate; and a peripheral circuit formed on the substrate in said peripheral circuit region for driving said matrix of thin film transistors, said peripheral circuit including thin film transistors and at least one IC chip, wherein each of the thin film transistors in the display region and the thin film transistors in the peripheral circuit comprises a semiconductor layer including source, drain and channel regions therein, a gate insulating layer formed on said channel region and a gate electrode formed on said gate insulating layer.
Claim 12
Dependent Claim
122 words
An active matrix device comprising: a substrate having an active display region and a peripheral circuit region; an electrode arrangement formed on said substrate; a matrix of thin film transistors formed in the display region of the substrate; and a peripheral circuit formed on the substrate in said peripheral circuit region for driving said matrix of thin film transistors, said peripheral circuit including thin film transistors and at least one IC chip, wherein each of the thin film transistors in the display region and the thin film transistors in the peripheral circuit comprises a semiconductor layer including source, drain and channel regions therein, a gate insulating layer formed on said channel region and a gate electrode formed on said gate insulating layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-22 | 2001-06-23 | 2001-12-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-22 | 2005-06-23 | 2005-12-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-22 | 2009-06-23 | 2009-12-23 | $7700.00 | Window Closed / Lapsed |