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US5695815A
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Metal carboxylate complexes for formation of metal-containing films on semiconductor devices
Assignee: Micron Technology Inc
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Filing: 1996-05-29
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Granted: 1997-12-09
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Expires: 2016-05-29
Abstract
Abstract A method of forming a metal-containing film on a substrate, such as a semiconductor wafer. The method involves depositing a Group VIII metal carboxylate complex on the substrate, wherein the Group VIII metal is selected from the group consisting of Ru, Os, Rh, Ir, Pd, and Pt, and thermally decomposing the Group VIII metal carboxylate complex to form the metal-containing film.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:52
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/692; H10P14/46
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
74 words
A method of manufacturing a semiconductor device comprising: (a) providing a semiconductor wafer; (b) depositing a Group VIII metal carboxylate complex on a surface of the semiconductor wafer using a nonvolatile deposition technique, wherein the Group VIII metal is selected from the group consisting of Ru, Os, Rh, Ir, Pd, and Pt; and (c) thermally decomposing the Group VIII metal carboxylate complex to form a metal-containing film on a surface of the semiconductor wafer.
Claim 2
Independent Claim
74 words
A method of manufacturing a semiconductor device comprising: (a) providing a semiconductor wafer; (b) depositing a Group VIII metal carboxylate complex on a surface of the semiconductor wafer using a nonvolatile deposition technique, wherein the Group VIII metal is selected from the group consisting of Ru, Os, Rh, Ir, Pd, and Pt; and (c) thermally decomposing the Group VIII metal carboxylate complex to form a metal-containing film on a surface of the semiconductor wafer.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein the semiconductor wafer is a silicon wafer.
Claim 4
Dependent Claim
13 words
The method of claim 2 wherein the metal-containing film forms a barrier layer.
Claim 5
Dependent Claim
30 words
The method of claim 1 wherein the metal-containing film comprises a metal film, a metal oxide film, a metal sulfide film, a metal selenide film, or a metal nitride film.
Claim 6
Dependent Claim
14 words
The method of claim 1 wherein the metal-containing film is an electrically conductive film.
Claim 7
Dependent Claim
12 words
The method of claim 5 wherein the metal-containing film forms an electrode.
Claim 8
Dependent Claim
17 words
The method of claim 1 wherein the nonvolatile deposition technique comprises spin-on coating, dip coating, or spraying.
Claim 9
Dependent Claim
56 words
The method of claim 1 wherein the metal carboxylate complex has the following general formula: (alkene).sub.x M(OC(O)R)!.sub.y wherein: (a) alkene refers to a neutral hydrocarbon ligand having one or more carbon-carbon double bonds; (b) M is in the +1 oxidation state; (c) R is a (C 3 -C 20 )hydrocarbon group; (d) x=0-4y; and (e) y=1-5.
Claim 10
Independent Claim
103 words
A method of manufacturing a ferroelectric memory device comprising: (a) providing a substrate; (b) forming a metal-containing film on a surface of the substrate by: (i) depositing a Group VIII metal carboxylate complex on the substrate using a nonvolatile deposition technique, wherein the Group VIII metal is selected from the group consisting of Ru, Os, Rh, Ir, Pd, and Pt; and (ii) thermally decomposing the Group VIII metal carboxylate complex to form the metal-containing film; (c) forming a first electrode on the metal-containing film; (d) depositing a ferroelectric material on the first electrode; and (e) forming a second electrode on the ferroelectric material.
Claim 11
Independent Claim
103 words
A method of manufacturing a ferroelectric memory device comprising: (a) providing a substrate; (b) forming a metal-containing film on a surface of the substrate by: (i) depositing a Group VIII metal carboxylate complex on the substrate using a nonvolatile deposition technique, wherein the Group VIII metal is selected from the group consisting of Ru, Os, Rh, Ir, Pd, and Pt; and (ii) thermally decomposing the Group VIII metal carboxylate complex to form the metal-containing film; (c) forming a first electrode on the metal-containing film; (d) depositing a ferroelectric material on the first electrode; and (e) forming a second electrode on the ferroelectric material.
Claim 12
Dependent Claim
12 words
The method of claim 9 wherein the substrate is a silicon wafer.
Claim 13
Dependent Claim
13 words
The method of claim 9 wherein the metal-containing film forms a barrier layer.
Claim 14
Dependent Claim
30 words
The method of claim 9 wherein the metal-containing film comprises a metal film, a metal oxide film, a metal sulfide film, a metal selenide film, or a metal nitride film.
Claim 15
Dependent Claim
17 words
The method of claim 9 wherein the nonvolatile deposition technique comprises spin-on coating, dip coating, or spraying.
Claim 16
Dependent Claim
56 words
The method of claim 9 wherein the metal carboxylate complex has the following general formula: (alkene).sub.x M(OC(O)R)!.sub.y wherein: (a) alkene refers to a neutral hydrocarbon ligand having one or more carbon-carbon double bonds; (b) M is in the +1 oxidation state; (c) R is a (C 3 -C 20 )hydrocarbon group; (d) x=0-4y; and (e) y=1-5.
Claim 17
Independent Claim
61 words
A method of forming a metal-containing film on a substrate comprising: (a) depositing a Group VIII metal carboxylate complex on the substrate using a nonvolatile deposition technique, wherein the Group VIII metal is selected from the group consisting of Ru, Os, Rh, Ir, Pd, and Pt; and (b) thermally decomposing the Group VIII metal carboxylate complex to form the metal-containing film.
Claim 18
Independent Claim
61 words
A method of forming a metal-containing film on a substrate comprising: (a) depositing a Group VIII metal carboxylate complex on the substrate using a nonvolatile deposition technique, wherein the Group VIII metal is selected from the group consisting of Ru, Os, Rh, Ir, Pd, and Pt; and (b) thermally decomposing the Group VIII metal carboxylate complex to form the metal-containing film.
Claim 19
Dependent Claim
12 words
The method of claim 15 wherein the substrate comprises a silicon substrate.
Claim 20
Dependent Claim
20 words
The method of claim 16 wherein the step of depositing comprises spin coating the metal carboxylate complex onto the substrate.
Claim 21
Dependent Claim
17 words
The method of claim 17 wherein the metal-containing film forms a barrier layer in a memory device.
Claim 22
Dependent Claim
14 words
The method of claim 18 wherein the memory device comprises a ferroelectric memory device.
Claim 23
Dependent Claim
30 words
The method of claim 15 wherein the metal-containing film comprises a metal film, a metal oxide film, a metal sulfide film, a metal selenide film, or a metal nitride film.
Claim 24
Dependent Claim
56 words
The method of claim 15 wherein the metal carboxylate complex has the following general formula: (alkene).sub.x M(OC(O)R)!.sub.y wherein: (a) alkene refers to a neutral hydrocarbon ligand having one or more carbon-carbon double bonds; (b) M is in the +1 oxidation state; (c) R is a (C 3 -C 20 )hydrocarbon group; (d) x=0-4y; and (e) y=1-5.
Claim 25
Dependent Claim
17 words
The method of claim 15 wherein the nonvolatile deposition technique comprises spin-on coating, dip coating, or spraying.
Claim 26
Dependent Claim
14 words
The method of claim 15 wherein the metal-containing film is an electrically conductive film.
Claim 27
Independent Claim
84 words
A method of forming a metal-containing film on a substrate comprising: depositing a metal carboxylate complex on the substrate: and thermally decomposing the metal carboxylate complex, wherein the metal carboxylate complex is of the formula: (alkene).sub.x M(OC(O)R)!.sub.y wherein: (a) alkene refers to a neutral hydrocarbon ligand having one or more carbon-carbon double bonds; (b) M is a second or third row Group VIII metal in the +1 oxidation state; (c) R is a (C 3 -C 20 )hydrocarbon group; (d) x=0-4y; and (e) y=1-5.
Claim 28
Independent Claim
84 words
A method of forming a metal-containing film on a substrate comprising: depositing a metal carboxylate complex on the substrate: and thermally decomposing the metal carboxylate complex, wherein the metal carboxylate complex is of the formula: (alkene).sub.x M(OC(O)R)!.sub.y wherein: (a) alkene refers to a neutral hydrocarbon ligand having one or more carbon-carbon double bonds; (b) M is a second or third row Group VIII metal in the +1 oxidation state; (c) R is a (C 3 -C 20 )hydrocarbon group; (d) x=0-4y; and (e) y=1-5.
Claim 29
Dependent Claim
16 words
The method of claim 24 wherein alkene refers to a neutral hydrocarbon linear or monocyclic ligand.
Claim 30
Dependent Claim
13 words
The method of claim 24 wherein the alkene has 1-4 carbon-carbon double bonds.
Claim 31
Dependent Claim
13 words
The method of claim 26 wherein the alkene has two carbon-carbon double bonds.
Claim 32
Dependent Claim
15 words
The method of claim 24 wherein R is a (C 3 -C 20 )alkyl group.
Claim 33
Dependent Claim
15 words
The method of claim 28 wherein R is a (C 3 -C 12 )alkyl moiety.
Claim 34
Dependent Claim
9 words
The method of claim 24 wherein x=0-2y and y=1-3.
Claim 35
Dependent Claim
21 words
The method of claim 24 wherein the metal carboxylate complex is deposited on a silicon substrate using a nonvolatile deposition technique.
Claim 36
Dependent Claim
13 words
The method of claim 24 wherein the metal-containing film forms a barrier layer.
Claim 37
Dependent Claim
30 words
The method of claim 24 wherein the metal-containing film comprises a metal film, a metal oxide film, a metal sulfide film, a metal selenide film, or a metal nitride film.
Claim 38
Dependent Claim
14 words
The method of claim 33 wherein the metal-containing film is an electrically conductive film.
Claim 39
Independent Claim
133 words
A method of manufacturing a semiconductor device comprising: (a) providing a semiconductor wafer; (b) depositing a Group VIII metal carboxylate complex on a surface of the semiconductor wafer using at least one of spraying, spin-on coating, and dip coating, wherein the Group VIII metal is selected from the group consisting of Ru, Os, Rh, Ir, Pd, and Pt, and wherein the metal carboxylate complex has the following general formula: (alkene).sub.x M(OC(O)R)!.sub.y wherein: (i) alkene refers to a neutral hydrocarbon ligand having one or more carbon-carbon double bonds; (ii) M is in the +1 oxidation state; (iii) R is a (C 3 -C 20 ) hydrocarbon group; (iv) x=0-4y; and (v) y=1-5; and (c) thermally decomposing the Group VIII metal carboxylate complex to form a metal-containing film on a surface of the semiconductor wafer.
Claim 40
Independent Claim
133 words
A method of manufacturing a semiconductor device comprising: (a) providing a semiconductor wafer; (b) depositing a Group VIII metal carboxylate complex on a surface of the semiconductor wafer using at least one of spraying, spin-on coating, and dip coating, wherein the Group VIII metal is selected from the group consisting of Ru, Os, Rh, Ir, Pd, and Pt, and wherein the metal carboxylate complex has the following general formula: (alkene).sub.x M(OC(O)R)!.sub.y wherein: (i) alkene refers to a neutral hydrocarbon ligand having one or more carbon-carbon double bonds; (ii) M is in the +1 oxidation state; (iii) R is a (C 3 -C 20 ) hydrocarbon group; (iv) x=0-4y; and (v) y=1-5; and (c) thermally decomposing the Group VIII metal carboxylate complex to form a metal-containing film on a surface of the semiconductor wafer.
Claim 41
Independent Claim
161 words
A method of manufacturing a ferroelectric memory device comprising: (a) providing a substrate; (b) forming a metal-containing film on a surface of the substrate by: (i) depositing a Group VIII metal carboxylate complex on the substrate using at least one of spraying, spin-on, or dip coating, wherein the Group VIII metal is selected from the group consisting of Ru; Os, Rh, Ir, Pd, and Pt; and wherein the metal carboxylate complex has the following general formula: (alkene).sub.x M(OC(O)R)!.sub.y wherein: (A) alkene refers to a neutral hydrocarbon ligand having one or more carbon-carbon double bonds; (B) M is in the +1 oxidation state; (C) R is a (C 3 -C 20 ) hydrocarbon group; (D) x=0-4y; and (E) y=1-5; and (ii) thermally decomposing the Group VIII metal carboxylate complex to form the metal-containing film; (c) forming a first electrode on the metal-containing film; (d) depositing a ferroelectric material on the first electrode; and (e) forming a second electrode on the ferroelectric material.
Claim 42
Independent Claim
161 words
A method of manufacturing a ferroelectric memory device comprising: (a) providing a substrate; (b) forming a metal-containing film on a surface of the substrate by: (i) depositing a Group VIII metal carboxylate complex on the substrate using at least one of spraying, spin-on, or dip coating, wherein the Group VIII metal is selected from the group consisting of Ru; Os, Rh, Ir, Pd, and Pt; and wherein the metal carboxylate complex has the following general formula: (alkene).sub.x M(OC(O)R)!.sub.y wherein: (A) alkene refers to a neutral hydrocarbon ligand having one or more carbon-carbon double bonds; (B) M is in the +1 oxidation state; (C) R is a (C 3 -C 20 ) hydrocarbon group; (D) x=0-4y; and (E) y=1-5; and (ii) thermally decomposing the Group VIII metal carboxylate complex to form the metal-containing film; (c) forming a first electrode on the metal-containing film; (d) depositing a ferroelectric material on the first electrode; and (e) forming a second electrode on the ferroelectric material.
Claim 43
Independent Claim
120 words
A method of forming a metal-containing film on a substrate comprising: (a) depositing a Group VIII metal carboxylate complex on the substrate using at least one of spraying, spin-on coating, or dip coating, wherein the Group VIII metal is selected from the group consisting of Ru, Os, Rh, Ir, Pd, and Pt; and wherein the metal carboxylate complex has the following general formula: (alkene).sub.x M(OC(O)R)!.sub.y wherein: (i) alkene refers to a neutral hydrocarbon ligand having one or more carbon-carbon double bonds; (ii) M is in the +1 oxidation state; (iii) R is a (C 3 -C 20 ) hydrocarbon group; (iv) x=0-4y; and (v) y=1-5; and (b) thermally decomposing the Group VIII metal carboxylate complex to form the metal-containing film.
Claim 44
Independent Claim
120 words
A method of forming a metal-containing film on a substrate comprising: (a) depositing a Group VIII metal carboxylate complex on the substrate using at least one of spraying, spin-on coating, or dip coating, wherein the Group VIII metal is selected from the group consisting of Ru, Os, Rh, Ir, Pd, and Pt; and wherein the metal carboxylate complex has the following general formula: (alkene).sub.x M(OC(O)R)!.sub.y wherein: (i) alkene refers to a neutral hydrocarbon ligand having one or more carbon-carbon double bonds; (ii) M is in the +1 oxidation state; (iii) R is a (C 3 -C 20 ) hydrocarbon group; (iv) x=0-4y; and (v) y=1-5; and (b) thermally decomposing the Group VIII metal carboxylate complex to form the metal-containing film.
References Cited (Backward Citations)
US5401535A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-12-08 | 2001-06-09 | 2001-12-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-08 | 2005-06-09 | 2005-12-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-08 | 2009-06-09 | 2009-12-09 | $7700.00 | Window Closed / Lapsed |