Abstract A silicon carbide trench MOSFET is provided that includes a first conductivity type semiconductor substrate made of silicon carbide. A first conductivity type drift layer and a second conductivity type base layer, both made of silicon carbide, are sequentially formed by epitaxial growth on the semiconductor substrate. The first conductivity type drift layer has a lower impurity concentration than the semiconductor substrate. A first conductivity type source region is formed in a part of a surface layer of the second conductivity type base layer. A gate electrode is received through an insulating film, in a first trench extending from a surface of the first conductivity type source region to reach the first conductivity type drift layer. A Schottky electrode disposed on an inner surface of a second trench having a greater depth than the first trench.
A method of producing a silicon carbide trench MOSFET comprising the steps of: preparing a first conductivity type semiconductor substrate comprising silicon carbide; sequentially forming a first conductivity type drift layer and a second conductivity type base layer by epitaxial growth on said semiconductor substrate, both of said first conductivity type drift layer and said second conductivity type base layer comprising silicon carbide, said first conductivity type drift layer having a lower impurity concentration than the semiconductor substrate; forming a first conductivity type source region in a part of a surface layer of said second conductivity type base layer; forming a first trench extending from a surface of said first conductivity type source region to reach said first conductivity type drift layer; forming a gate electrode in said first trench through an insulating film; and forming a second trench having a greater depth than said first trench, and disposing a Schottky electrode on an inner surface of the second trench.
Claim 2
Independent Claim
160 words
A method of producing a silicon carbide trench MOSFET comprising the steps of: preparing a first conductivity type semiconductor substrate comprising silicon carbide; sequentially forming a first conductivity type drift layer and a second conductivity type base layer by epitaxial growth on said semiconductor substrate, both of said first conductivity type drift layer and said second conductivity type base layer comprising silicon carbide, said first conductivity type drift layer having a lower impurity concentration than the semiconductor substrate; forming a first conductivity type source region in a part of a surface layer of said second conductivity type base layer; forming a first trench extending from a surface of said first conductivity type source region to reach said first conductivity type drift layer; forming a gate electrode in said first trench through an insulating film; and forming a second trench having a greater depth than said first trench, and disposing a Schottky electrode on an inner surface of the second trench.