US5693558A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating a laser diode
Assignee: MagnaChip Semiconductor Ltd
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Filing: 1996-11-26
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Granted: 1997-12-02
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Expires: 2016-11-26
Abstract
Abstract The present invention relates to a method for fabricating a semiconductor laser diode in optical communication system, having the steps for forming current blocking layers on the resulting structure of the mesa structure and then forming an opening through the current blocking layer on the mesa structure.
Inventors
- 👤 Soo Won Lee
- 👤 Gyu Seog Cho
- 👤 Tae Jin Kim
- 👤 Kyung Seok Oh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:48
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/02; H01S5/0201; H01S5/0203; H01S5/0205; H01S5/2205; H01S5/2206; H01S5/2275
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
144 words
A method for fabricating a laser diode comprising the steps for: successively forming a first clad layer, an active layer, a second clad layer and an etch stop layer on a semiconductor substrate; forming an oxide pattern on said etch stop layer; forming a mesa structure by etching a portion of said layers under said oxide pattern from said etch stop layer to a portion of said first clad layer using said oxide pattern as an etch mask; removing said oxide pattern; forming a first and a second current blocking layer on the resulting structure; forming an opening to expose said etch stop layer by applying an anisotropic etching to said current blocking layers with a photo resist pattern; removing said etch stop layer; forming a first contact layer on the resulting structure; and forming a second contact layer on said first contact layer.
Claim 2
Independent Claim
144 words
A method for fabricating a laser diode comprising the steps for: successively forming a first clad layer, an active layer, a second clad layer and an etch stop layer on a semiconductor substrate; forming an oxide pattern on said etch stop layer; forming a mesa structure by etching a portion of said layers under said oxide pattern from said etch stop layer to a portion of said first clad layer using said oxide pattern as an etch mask; removing said oxide pattern; forming a first and a second current blocking layer on the resulting structure; forming an opening to expose said etch stop layer by applying an anisotropic etching to said current blocking layers with a photo resist pattern; removing said etch stop layer; forming a first contact layer on the resulting structure; and forming a second contact layer on said first contact layer.
Claim 3
Dependent Claim
19 words
A method as claimed in claim 1, wherein said step fox forming an opening is performed by dry etching.
Claim 4
Dependent Claim
17 words
A method as claimed in claim 1, wherein said first clad layer is an n-InP clad layer.
Claim 5
Dependent Claim
17 words
A method as claimed in claim 1, wherein said second clad layer is a p-InP clad layer.
Claim 6
Dependent Claim
17 words
A method as claimed in claim 1, wherein said first current blocking layer is a p-InP layer.
Claim 7
Dependent Claim
17 words
A method as claimed in claim 1, wherein said second current blocking layer is an n-InP layer.
Claim 8
Dependent Claim
16 words
A method as claimed in claim 1, wherein said first contact layer is a p-contact layer.
Claim 9
Dependent Claim
17 words
A method as claimed in claim 1, wherein said second contact layer is a metal contact layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-01 | 2001-06-02 | 2001-12-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-01 | 2005-06-02 | 2005-12-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-01 | 2009-06-02 | 2009-12-02 | $7700.00 | Window Closed / Lapsed |