In situ etch process for insulating and conductive materials

Claim 3

The method according to claim 1, wherein said first and third atmospheres comprise a fluorocarbon, said fluorocarbon comprising at least one of CF 4 , CHF 3 , and C 2 F 6 .

Claim 4

The method according to claim 1, wherein said second and another atmospheres comprise a halogenated species, said halogenated species comprising at least one of Cl 2 , Br 2 , F 2 , and I 2 .

Claim 5

The method according to claim 3, wherein said layered sandwich structure comprises an oxide/polysilicon/oxide sandwich structure.

Claim 6

A process for forming a void in a multilayered sandwich structure, said process comprising steps of: providing a pattern layer upon a substrate, said substrate having an oxide/polysilicon/oxide layered sandwich structure; and selectively removing in accordance with said pattern layer portions of each of said oxide/polysilicon/oxide layers in situ within a given chamber, thereby creating at least one void in said layered sandwiched structure, said at least one void having a sidewall with a profile that is substantially vertical relative a substantially horizontal plane defined by an upper surface of said substrate, said void profile having at least a slight undercut at said polysilicon layer; wherein at least a portion of said polysilicon layer is removed with a plasma comprising a halogenated species; wherein said halogenated species comprises approximately 10-40 sccm of Cl 2 ; and wherein said void provides a contact hole, said contact hole being lined with an insulator for isolating, at the undercut, polysilicon of the polysilicon layer from a subsequent conductive material, and subsequently receiving a conductive material therein.

Claim 7

A process for forming a void in a multilayered sandwich structure, said process comprising steps of: providing a pattern layer upon a substrate, said substrate having an oxide/polysilicon/oxide layered sandwich structure; and selectively removing in accordance with said pattern layer portions of each of said oxide/polysilicon/oxide layers in situ within a given chamber, thereby creating at least one void in said layered sandwiched structure, said at least one void having a sidewall with a profile that is substantially vertical relative a substantially horizontal plane defined by an upper surface of said substrate, said void profile having at least a slight undercut at said polysilicon layer; wherein at least a portion of said polysilicon layer is removed with a plasma comprising a halogenated species; wherein said halogenated species comprises approximately 10-40 sccm of Cl 2 ; and wherein said void provides a contact hole, said contact hole being lined with an insulator for isolating, at the undercut, polysilicon of the polysilicon layer from a subsequent conductive material, and subsequently receiving a conductive material therein.

Claim 8

A process for forming a void in a multilayered sandwich structure, said process comprising steps of: providing a pattern layer upon a substrate, said substrate having an oxide/polysilicon/oxide layered sandwich structure; and selectively removing in accordance with said pattern layer portions of each of said oxide/polysilicon/oxide layers in situ within a given chamber, thereby creating at least one void in said layered sandwiched structure, said at least one void having a sidewall with a profile that is substantially vertical relative a substantially horizontal plane defined by an upper surface of said substrate, said void profile having at least a slight undercut at said polysilicon layer; wherein at least a portion of said polysilicon layer is removed with a plasma comprising a halogenated species; wherein said halogenated species comprises approximately 10-40 sccm of Cl 2 ; and wherein a preliminary portion of said polysilicon layer is removed anisotropically by plasma in an environment comprising a pressure in a range of 15-30 mtorr and an applied power in a range of 250-350 Watts and a magnetic field in a range of 100-200 gauss.

Claim 9

A process for forming a void in a multilayered sandwich structure, said process comprising steps of: providing a pattern layer upon a substrate, said substrate having an oxide/polysilicon/oxide layered sandwich structure; and selectively removing in accordance with said pattern layer portions of each of said oxide/polysilicon/oxide layers in situ within a given chamber, thereby creating at least one void in said layered sandwiched structure, said at least one void having a sidewall with a profile that is substantially vertical relative a substantially horizontal plane defined by an upper surface of said substrate, said void profile having at least a slight undercut at said polysilicon layer; wherein at least a portion of said polysilicon layer is removed with a plasma comprising a halogenated species; wherein said halogenated species comprises approximately 10-40 sccm of Cl 2 ; and wherein a preliminary portion of said polysilicon layer is removed anisotropically by plasma in an environment comprising a pressure in a range of 15-30 mtorr and an applied power in a range of 250-350 Watts and a magnetic field in a range of 100-200 gauss.

Claim 10

An in situ etch process for etching a conductive layer disposed between insulating layers, said process comprising steps of: selectively removing portions of an insulator/conductor/insulator layered sandwich structure disposed on a substrate, thereby creating at least one hole in said layered sandwich structure, said at least one hole having a sidewall with a substantially vertical profile relative to a horizontal plane defined by an upper surface of said substrate, said profile having an indentation at said conductive layer relative said insulator layers; wherein said step of selectively removing comprises: creating a plasma in said chamber, said plasma comprises a fluorocarbon and an inert gas, said fluorocarbon selective to said substrate and comprises a gas flow of CF 4 in a range of 15-30 sccm and CHF 3 in a range of 25-40 sccm, and said inert gas comprises a gas flow of argon in a range of 50-70 sccm, and creating another plasma in said chamber, said another plasma comprises a halogenated species, said halogenated species comprises a gas flow of Cl 2 in a range of 10-50 sccm and SF 6 in a range of 3-40 sccm; wherein said conductive material comprises polysilicon; and wherein said at least one insulating material comprises at least one of an oxide and a nitride.

Claim 11

An in situ etch process for etching a conductive layer disposed between insulating layers, said process comprising steps of: selectively removing portions of an insulator/conductor/insulator layered sandwich structure disposed on a substrate, thereby creating at least one hole in said layered sandwich structure, said at least one hole having a sidewall with a substantially vertical profile relative to a horizontal plane defined by an upper surface of said substrate, said profile having an indentation at said conductive layer relative said insulator layers; wherein said step of selectively removing comprises: creating a plasma in said chamber, said plasma comprises a fluorocarbon and an inert gas, said fluorocarbon selective to said substrate and comprises a gas flow of CF 4 in a range of 15-30 sccm and CHF 3 in a range of 25-40 sccm, and said inert gas comprises a gas flow of argon in a range of 50-70 sccm, and creating another plasma in said chamber, said another plasma comprises a halogenated species, said halogenated species comprises a gas flow of Cl 2 in a range of 10-50 sccm and SF 6 in a range of 3-40 sccm; wherein said conductive material comprises polysilicon; and wherein said at least one insulating material comprises at least one of an oxide and a nitride.