US5691245A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Methods of forming two-sided HDMI interconnect structures
Assignee: Raytheon Co
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Filing: 1996-10-28
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Granted: 1997-11-25
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Expires: 2016-10-28
Abstract
Abstract Methods of forming two-sided high density multilayer interconnect (HDMI) structures on a relatively large carrier and subsequently releasing and removing one or more structures to provide useable flexible interconnects or decals. In general, a carrier is provided and a release layer is formed on the carrier. Flexible high density multilayer interconnect structures are fabricated on the release layer. The release layer is processed to release and remove one or more flexible HDMI structures from the carrier. The carrier may be an ultraviolet transparent substrate, such as quartz, for example, and the release layer may be a polyimide layer. The HDMI structures are released by irradiating the release layer through the transparent carrier using ultraviolet radiation from an ultraviolet radiation source. Alternatively, a silicon carrier may be used that has a metal or silicon dioxide release layer formed thereon. The HDMI structures are released from the metal or silicon dioxide release layer by using wet etching procedures.
Inventors
- 👤 Gabriel G. Bakhit
- 👤 Vincent A. Pillai
- 👤 George Averkiou
- 👤 Philip A. Trask
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 08:37
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/70; H10P72/74; H05; H05K; H05K3/00; H05K3/0058; H05K3/46; H05K3/4644; H05K3/467; H05K3/4682; H10W; H10W70/00; H10W70/01; H10W70/05; H05K2201/00; H05K2201/01; H05K2201/0104; H05K2201/0108; H05K2203/00; H05K2203/01; H05K2203/0147; H05K2203/016; H10P72/7424; H10P72/743
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
128 words
A method of forming a two-sided high density multichip interconnect structure, said method comprising the steps of: providing a carrier; forming a release layer on the carrier; fabricating a two-sided flexible high density multilayer interconnect structure on the release layer that has a bottom set of bond pads; temporarily bonding the top surface of the two-sided flexible HDMI structure to an inert flat plate; releasing the two-sided flexible high density multilayer interconnect structure from the carrier; forming vias through the release layer to expose the bottom set of bond pads; and depositing additional metal in the vias and on the exposed bottom surface of the carrier to form a bottom set of contact pads for the two-sided flexible HDMI structure that contact the bottom set of bond pads.
Claim 2
Independent Claim
128 words
A method of forming a two-sided high density multichip interconnect structure, said method comprising the steps of: providing a carrier; forming a release layer on the carrier; fabricating a two-sided flexible high density multilayer interconnect structure on the release layer that has a bottom set of bond pads; temporarily bonding the top surface of the two-sided flexible HDMI structure to an inert flat plate; releasing the two-sided flexible high density multilayer interconnect structure from the carrier; forming vias through the release layer to expose the bottom set of bond pads; and depositing additional metal in the vias and on the exposed bottom surface of the carrier to form a bottom set of contact pads for the two-sided flexible HDMI structure that contact the bottom set of bond pads.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein the carrier comprises a transparent carrier that is transparent to ultraviolet radiation.
Claim 4
Dependent Claim
11 words
The method of claim 2 wherein the transparent carrier comprises quartz.
Claim 5
Dependent Claim
11 words
The method of claim 2 wherein the release layer comprises polyimide.
Claim 6
Dependent Claim
31 words
The method of claim 2 wherein the step of releasing the two-sided interconnect structure comprises the step of irradiating the release layer through the transparent carrier using an ultraviolet radiation source.
Claim 7
Dependent Claim
14 words
The method of claim 2 wherein the release layer comprises a metal release layer.
Claim 8
Dependent Claim
12 words
The method of claim 6 wherein the metal release layer comprises titanium.
Claim 9
Dependent Claim
12 words
The method of claim 6 wherein the metal release layer comprises tungsten.
Claim 10
Dependent Claim
33 words
The method of claim 6 wherein the step of processing the metal release layer to release the flexible high density multilayer interconnect structure from the carrier comprises wet etching the metal release layer.
Claim 11
Dependent Claim
42 words
The method of claim 1 wherein the two-sided flexible high density multilayer interconnect structure comprises dielectric layers having metal free line interconnects and vias formed therethrough that provide signal paths between bond pads at surfaces of the high density multilayer interconnect structure.
Claim 12
Independent Claim
118 words
A method of forming a two-sided high density multichip interconnect structure, said method comprising the steps of: providing a carrier; forming a release layer on the carrier; fabricating a two-sided flexible high density multilayer interconnect structure on the release layer that has a bottom set of bond pads; releasing the two-sided flexible high density multilayer interconnect structure from the carrier; removing the release layer to expose the bottom set of bond pads; depositing an additional polyimide layer over the bottom set of bond pads; forming vias through the additional polyimide layer to expose the bottom set of bond pads; and forming bottom contact pads that contact the bottom set of bond pads of the two-sided flexible HDMI structure.
Claim 13
Independent Claim
118 words
A method of forming a two-sided high density multichip interconnect structure, said method comprising the steps of: providing a carrier; forming a release layer on the carrier; fabricating a two-sided flexible high density multilayer interconnect structure on the release layer that has a bottom set of bond pads; releasing the two-sided flexible high density multilayer interconnect structure from the carrier; removing the release layer to expose the bottom set of bond pads; depositing an additional polyimide layer over the bottom set of bond pads; forming vias through the additional polyimide layer to expose the bottom set of bond pads; and forming bottom contact pads that contact the bottom set of bond pads of the two-sided flexible HDMI structure.
Claim 14
Dependent Claim
40 words
The method of claim 11 further comprising the step of: temporarily bonding the top surface of the two-sided flexible HDMI structure to an inert flat plate prior to releasing the two-sided flexible high density multilayer interconnect structure from the carrier.
Claim 15
Dependent Claim
18 words
The method of claim 11 wherein the carrier comprises a transparent carrier that is transparent to ultraviolet radiation.
Claim 16
Dependent Claim
11 words
The method of claim 12 wherein the transparent carrier comprises quartz.
Claim 17
Dependent Claim
11 words
The method of claim 12 wherein the release layer comprises polyimide.
Claim 18
Dependent Claim
31 words
The method of claim 12 wherein the step of releasing the two-sided interconnect structure comprises the step of irradiating the release layer through the transparent carrier using an ultraviolet radiation source.
Claim 19
Dependent Claim
14 words
The method of claim 11 wherein the release layer comprises a metal release layer.
Claim 20
Dependent Claim
12 words
The method of claim 17 wherein the metal release layer comprises titanium.
Claim 21
Dependent Claim
12 words
The method of claim 17 wherein the metal release layer comprises tungsten.
Claim 22
Dependent Claim
33 words
The method of claim 17 wherein the step of processing the metal release layer to release the flexible high density multilayer interconnect structure from the carrier comprises wet etching the metal release layer.
Claim 23
Dependent Claim
42 words
The method of claim 11 wherein the two-sided flexible high density multilayer interconnect structure comprises dielectric layers having metal free line interconnects and vias formed therethrough that provide signal paths between bond pads at surfaces of the high density multilayer interconnect structure.
References Cited (Backward Citations)
US5039628A
Cited
US5192716A
Cited
US4980034A
Cited
US5262351A
Cited
US5196362A
Cited
US5352926A
Cited
US5514613A
Cited
US5400220A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-11-24 | 2001-05-26 | 2001-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-11-24 | 2005-05-26 | 2005-11-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-11-24 | 2009-05-26 | 2009-11-25 | $7700.00 | Window Closed / Lapsed |