Patent US5689138A successfully refreshed from Google Patents.
US5689138A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated microwave semiconductor device with active and passive components
Assignee: Adeia Semiconductor Technologies LLC
•
Filing: 1995-10-26
•
Granted: 1997-11-18
•
Expires: 2015-10-26
Abstract
Abstract A semiconductor device for microwave frequencies with a substrate which is provided at a first side with a semiconductor element, a passive element, and a pattern of conductive elements, while the opposed, second side is provided with a metallization which is connected to the elements present on the first side through windows formed in the substrate. The substrate consists of a silicon layer which is present on a layer of insulating material, the semiconductor element being formed in the silicon layer, and the metallization being provided on that side of the layer of insulating material which is remote from the silicon layer. The silicon layer may here have a very small thickness of, for example, 0.1 to 0.2 μm. In such a thin silicon layer, bipolar and field effect transistors capable of processing signals of microwave frequencies can be formed. Since the silicon layer is thin, the influence of the conductivity of silicon on passive elements is small.
Inventors
- 👤 Ronald Dekker
- 👤 Henricus G. R. Maas
- 👤 Wilhelmus T. A. J. van den Einden
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-10 01:45
CPC Classifications
H; H10; H10D; H10D84/00; H10P; H10P72/00; H10P72/70; H10P72/74; H10P72/743; H10P72/7432
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
101 words
A semiconductor device for microwave frequencies, comprising a substrate which is provided, at a first side, with a semiconductor element, a passive element, and a pattern of conductive elements and, at the opposed, second side, with a metallization connected to the elements present at the first side through windows formed in the substrate, the substrate being formed by a layer of silicon which is present on a layer of insulating material, the semiconductor element being formed in the silicon layer and the metallization being formed on a side of the layer of insulating material which is remote from the silicon layer.
Claim 2
Dependent Claim
101 words
A semiconductor device for microwave frequencies, comprising a substrate which is provided, at a first side, with a semiconductor element, a passive element, and a pattern of conductive elements and, at the opposed, second side, with a metallization connected to the elements present at the first side through windows formed in the substrate, the substrate being formed by a layer of silicon which is present on a layer of insulating material, the semiconductor element being formed in the silicon layer and the metallization being formed on a side of the layer of insulating material which is remote from the silicon layer.
Claim 3
Dependent Claim
31 words
The semiconductor device of claim 1, wherein the semiconductor element is formed in an insulated silicon island, and the passive element is formed beside said silicon island on the insulating layer.
Claim 4
Dependent Claim
26 words
The semiconductor device of claim 2, wherein the substrate is fastened with its first side to an insulating body by means of a layer of glue.
Claim 5
Dependent Claim
46 words
The semiconductor device of claim 3, wherein the substrate is formed from a slice of silicon which is provided at its first side with a buried layer of silicon oxide and from which the silicon is removed from the second side down to the buried layer.
Claim 6
Dependent Claim
23 words
The semiconductor device of claim 4, wherein the metallization at the second side of the substrate is formed by electrochemically grown metal parts.
Claim 7
Dependent Claim
29 words
The semiconductor device of claim 5, wherein at least one of the grown metal parts is connected to the conductive elements provided on the first side of the substrate.
Claim 8
Dependent Claim
26 words
The semiconductor device of claim 5, wherein at least one of the electrochemically grown metal parts is connected to conductor tracks provided on an insulating carrier.
Claim 9
Dependent Claim
29 words
The semiconductor device of claim 5, wherein at least one of the grown metal parts is connected to the passive elements provided on the first side of the substrate.
Claim 10
Dependent Claim
29 words
The semiconductor device of claim 5, wherein at least one of the grown metal parts is connected to the silicon island provided on the first side of the substrate.
Claim 11
Dependent Claim
14 words
The semiconductor device of claim 5, wherein the electrochemically grown metal parts comprise bumps.
Claim 12
Dependent Claim
29 words
The semiconductor device of claim 6, wherein at least one of the grown metal parts is connected to the silicon island provided on the first side of the substrate.
Claim 13
Dependent Claim
26 words
The semiconductor device of claim 6, wherein at least one of the electrochemically grown metal parts is connected to conductor tracks provided on an insulating carrier.
Claim 14
Dependent Claim
29 words
The semiconductor device of claim 6, wherein at least one of the grown metal parts is connected to the passive elements provided on the first side of the substrate.
Claim 15
Dependent Claim
29 words
The semiconductor device of claim 11, wherein at least one of the grown metal parts is connected to the passive elements provided on the first side of the substrate.
Claim 16
Dependent Claim
50 words
The semiconductor device of claim 14, wherein the passive element is a coil formed by a metal track provided on the layer of insulating material, which track is provided with an electrochemically grown metal part over substantially its entire length through a window provided in the layer of insulating material.
Claim 17
Dependent Claim
26 words
The semiconductor device of claim 14, wherein at least one of the electrochemically grown metal parts is connected to conductor tracks provided on an insulating carrier.
Claim 18
Dependent Claim
26 words
The semiconductor device of claim 9, wherein at least one of the electrochemically grown metal parts is connected to conductor tracks provided on an insulating carrier.
Claim 19
Dependent Claim
23 words
The semiconductor device of claim 1, wherein the metallization at the second side of the substrate is formed by electrochemically grown metal parts.
Claim 20
Dependent Claim
26 words
The semiconductor device of claim 18, wherein at least one of the electrochemically grown metal parts is connected to conductor tracks provided on an insulating carrier.
Claim 21
Dependent Claim
26 words
The semiconductor device of claim 1, wherein the substrate is fastened with its first side to an insulating body by means of a layer of glue.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-11-17 | 2001-05-19 | 2001-11-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-11-17 | 2005-05-19 | 2005-11-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-11-17 | 2009-05-19 | 2009-11-18 | $7700.00 | Window Closed / Lapsed |