US5688979A
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Organometallic zirconium precursor, in-situ synthesis thereof, lead-titanium based thin film using the same, and preparation method therefor
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-10-10
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Granted: 1997-11-18
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Expires: 2016-10-10
Abstract
Abstract An organometallic zirconium precursor, represented by following formula:LxxZr(THD)4 [I]wherein L is an electron donor ligand selected from the group consisting of NR3 (R=H, CH3) gas and Cl2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.3 to 1.5 with the proviso that L is NR3 or in the range of 0.5 to 2 with the proviso that L is Cl2, is prepared by flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Zr at a predetermined temperature, to synthesize, in-situ, an adduct. The precursor exhibits a remarkable improvement in volatility, and in stability at the vaporization point. Lead-zirconium-titanium thin films prepared from the precursor, display superior reproducibility and reliability.
Inventors
- 👤 Wan-in Lee
- 👤 Jun-ki Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:09
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/409
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
83 words
An organometallic zirconium precursor for ferroelectric lead-zirconium-titanium thin films, represented by the following Formula I: L.sub.X ·Zr(THD).sub.4 I! wherein L is an electron donor ligand selected from the group consisting of NR 3 (R═H, CH 3 ! gas, wherein R is hydrogen or methyl, and Cl 2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.3 to 1.5 when L is NR 3 , or x is in the range of 0.5 to 2 when L is Cl 2 .
Claim 2
Dependent Claim
83 words
An organometallic zirconium precursor for ferroelectric lead-zirconium-titanium thin films, represented by the following Formula I: L.sub.X ·Zr(THD).sub.4 I! wherein L is an electron donor ligand selected from the group consisting of NR 3 (R═H, CH 3 ! gas, wherein R is hydrogen or methyl, and Cl 2 gas; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.3 to 1.5 when L is NR 3 , or x is in the range of 0.5 to 2 when L is Cl 2 .
Claim 3
Dependent Claim
31 words
An organometallic zirconium precursor for ferroelectric lead-zirconium-titanium thin films in accordance with claim 1, wherein said organometallic zirconium precursor is volatilized at a temperature of about 110° to about 170° C.
Claim 4
Dependent Claim
31 words
An organometallic zirconium precursor for ferroelectric lead-zirconium-titanium thin films in accordance with claim 2, wherein said organometallic zirconium precursor is volatilized at a temperature of about 110° to about 160° C.
Claim 5
Dependent Claim
31 words
An organometallic zirconium precursor for ferroelectric lead-zirconium-titanium thin fills in accordance with claim 2, wherein said organometallic zirconium precursor is volatilized at a temperature of about 120° to about 170° C.
Claim 6
Independent Claim
126 words
A method for the preparation of an organometallic zirconium precursor, comprising flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Zr at a predetermined temperature, to synthesize, in-situ, an adduct represented by the following formula II: L.sub.x ·Zr(THD).sub.4 II! wherein L is an electron donor ligand selected from the group consisting of NR 3 , wherein R is hydrogen or methyl, and Cl 2 ; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.3 to 1.5 when L is NR 3 , or x is in the range of 0.5 to 2 when L is Cl 2 ; said gas phase electron donor serving as a carrier gas and being selected from the group consisting of NH 3 and Cl 2 .
Claim 7
Independent Claim
126 words
A method for the preparation of an organometallic zirconium precursor, comprising flowing a gas phase electron donor into a bubbler containing bis (2,2',6,6'-tetramethyl-3,5-heptanedione)Zr at a predetermined temperature, to synthesize, in-situ, an adduct represented by the following formula II: L.sub.x ·Zr(THD).sub.4 II! wherein L is an electron donor ligand selected from the group consisting of NR 3 , wherein R is hydrogen or methyl, and Cl 2 ; THD denotes 2,2',6,6'-tetramethyl-3,5-heptanedione; and x is in the range of 0.3 to 1.5 when L is NR 3 , or x is in the range of 0.5 to 2 when L is Cl 2 ; said gas phase electron donor serving as a carrier gas and being selected from the group consisting of NH 3 and Cl 2 .
Claim 8
Dependent Claim
35 words
A method in accordance with claim 5, wherein said predetermined temperature is from about 120° to about 170° C. and said gas phase electron donor is NR 3 , wherein R is hydrogen or methyl.
Claim 9
Dependent Claim
29 words
A method in accordance with claim 5, wherein said predetermined temperature is from about 200° to about 240° C. and said gas phase electron donor is Cl 2 .
References Cited (Backward Citations)
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