Method for fabricating capacitors of semiconductor device having cylindrical storage electrodes

Claim 1

A method for fabricating a capacitor of a semiconductor device comprising the steps of: forming a lower insulating layer on a semiconductor substrate, and depositing a first insulating film on the lower insulating layer; forming a contact hole in the resulting structure obtained after the formation of the first insulating film, using a contact mask, such that the semiconductor substrate is partially exposed through the contact hole; forming a first conduction layer on the resulting structure obtained after the formation of the contact hole such that the first conduction layer is in contact with the semiconductor substrate through the contact hole; forming a second insulating film on the first conduction layer, and forming a first storage electrode mask on the second insulating film; selectively growing the second insulating film, thereby forming a selectively-grown oxide film extending to a height; forming a second storage electrode mask on both the first storage electrode mask and the selectively-grown oxide film such that the second storage electrode mask extends laterally beyond the first storage electrode mask by a width on each side thereof; sequentially etching the selectively-grown oxide film, the second insulating film and a portion of the first conduction layer using the second storage electrode mask, thereby forming a selectively-grown oxide film pattern; removing the second storage electrode mask and the first storage electrode mask, and forming a second conduction layer to a thickness on the resulting structure obtained after the removal of the masks; anisotropically etching the second conduction layer, thereby forming second-conduction layer spacers; etching the second insulating film using the second-conduction layer spacers as a mask, and forming a third conduction layer to a thickness on the resulting structure obtained after the etching of the second insulating film; anisotropically etching the third conduction layer and the first conduction layer, thereby forming third-conduction layer spacers and a first-conduction layer pattern; and removing the selectively-grown oxide film pattern, the first insulating film and the second insulating film pattern using a wet etching method, whereby a cylindrical storage electrode with an increased surface area is formed.

Claim 2

A method for fabricating a capacitor of a semiconductor device comprising the steps of: forming a lower insulating layer on a semiconductor substrate, and depositing a first insulating film on the lower insulating layer; forming a contact hole in the resulting structure obtained after the formation of the first insulating film, using a contact mask, such that the semiconductor substrate is partially exposed through the contact hole; forming a first conduction layer on the resulting structure obtained after the formation of the contact hole such that the first conduction layer is in contact with the semiconductor substrate through the contact hole; forming a second insulating film on the first conduction layer, and forming a first storage electrode mask on the second insulating film; selectively growing the second insulating film, thereby forming a selectively-grown oxide film extending to a height; forming a second storage electrode mask on both the first storage electrode mask and the selectively-grown oxide film such that the second storage electrode mask extends laterally beyond the first storage electrode mask by a width on each side thereof; sequentially etching the selectively-grown oxide film, the second insulating film and a portion of the first conduction layer using the second storage electrode mask, thereby forming a selectively-grown oxide film pattern; removing the second storage electrode mask and the first storage electrode mask, and forming a second conduction layer to a thickness on the resulting structure obtained after the removal of the masks; anisotropically etching the second conduction layer, thereby forming second-conduction layer spacers; etching the second insulating film using the second-conduction layer spacers as a mask, and forming a third conduction layer to a thickness on the resulting structure obtained after the etching of the second insulating film; anisotropically etching the third conduction layer and the first conduction layer, thereby forming third-conduction layer spacers and a first-conduction layer pattern; and removing the selectively-grown oxide film pattern, the first insulating film and the second insulating film pattern using a wet etching method, whereby a cylindrical storage electrode with an increased surface area is formed.