Patent US5688366A successfully refreshed from Google Patents.
US5688366A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Etching method, method of producing a semiconductor device, and etchant therefor
Assignee: Canon Inc
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Filing: 1995-04-26
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Granted: 1997-11-18
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Expires: 2015-04-26
Abstract
Abstract A method of etching material as a transparent conductive film, a method of producing a semiconductor device, and an etchant therefor are disclosed. These method and etchant are simple, excellent in etching selectivity, and stable for a long time. The methods include the steps of disposing paste on material wherein the paste includes an etching solution and at least one kind of fine particles. A method of producing a semiconductor device, including the above-described etching steps is also disclosed.
Inventors
- 👤 Hirofumi Ichinose
- 👤 Satoshi Shinkura
- 👤 Akio Hasebe
- 👤 Tsutomu Murakami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:23
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/20; H10F77/244; H10F77/247
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
74 words
An etching method comprising the steps of: a) disposing an etching paste on a transparent conductive film material in a pattern, said etching paste comprising at least one kind of fine particles and an etching solution, wherein said fine particles comprise resin particles selected from the group consisting of acryl resin, silicone resin, benzoguanamine resin, fluorocarbon resin, urethane resin, and polystyrene resin and b) performing heat treatment on said paste disposed on said material.
Claim 2
Dependent Claim
74 words
An etching method comprising the steps of: a) disposing an etching paste on a transparent conductive film material in a pattern, said etching paste comprising at least one kind of fine particles and an etching solution, wherein said fine particles comprise resin particles selected from the group consisting of acryl resin, silicone resin, benzoguanamine resin, fluorocarbon resin, urethane resin, and polystyrene resin and b) performing heat treatment on said paste disposed on said material.
Claim 3
Dependent Claim
27 words
An etching method according to claim 1, wherein the melting point of said fine particles is higher than the temperature at which said heat treatment is performed.
Claim 4
Dependent Claim
20 words
An etching method according to claim 1, wherein said heat treatment is performed at a temperature higher than 100° C.
Claim 5
Dependent Claim
20 words
An etching method according to claim 1, wherein the average diameter of said fine particles is less than 20 μm.
Claim 6
Dependent Claim
34 words
An etching method according to claim 1, wherein said paste is disposed on the material by a technique selected from the group consisting of a printing technique, a coating technique, and a dotting technique.
Claim 7
Dependent Claim
13 words
An etching method according to claim 1, wherein said material comprises a metal.
Claim 8
Dependent Claim
35 words
An etching method according to claim 1, wherein said paste is disposed on the material in such a manner that the thickness of said paste is in the range from 10 μm to 2 mm.
Claim 9
Dependent Claim
13 words
An etching method according to claim 1, wherein said paste further includes glycerin.
Claim 10
Dependent Claim
19 words
An etching method according to claim 1, wherein said paste is removed after said step of performing heat treatment.
Claim 11
Independent Claim
77 words
A method of producing a semiconductor device, comprising the step of: disposing an etching paste on a transparent conductive film material in a pattern, said etching paste comprising at least one kind of fine particles and an etching solution, wherein said fine particles comprise resin particles selected from the group consisting of acryl resin, silicone resin, benzoguanamine resin, fluorocarbon resin, urethane resin, and polystyrene resin and b) performing heat treatment on said paste disposed on said material.
Claim 12
Independent Claim
77 words
A method of producing a semiconductor device, comprising the step of: disposing an etching paste on a transparent conductive film material in a pattern, said etching paste comprising at least one kind of fine particles and an etching solution, wherein said fine particles comprise resin particles selected from the group consisting of acryl resin, silicone resin, benzoguanamine resin, fluorocarbon resin, urethane resin, and polystyrene resin and b) performing heat treatment on said paste disposed on said material.
Claim 13
Dependent Claim
31 words
A method of producing a semiconductor device according to claim 10, wherein the melting point of said fine particles is higher than the temperature at which said heat treatment is performed.
Claim 14
Dependent Claim
24 words
A method of producing a semiconductor device according to claim 10, wherein said heat treatment is performed at a temperature higher than 100° C.
Claim 15
Dependent Claim
24 words
A method of producing a semiconductor device according to claim 10, wherein the average diameter of said fine particles is less than 20 μm.
Claim 16
Dependent Claim
40 words
A method of producing a semiconductor device according to claim 10, wherein said paste is disposed on the transparent conductive film by a technique selected from the group consisting of a printing technique, a coating technique, and a dotting technique.
Claim 17
Dependent Claim
20 words
A method of producing a semiconductor device according to claim 10, wherein said semiconductor device includes a non-single semiconductor layer.
Claim 18
Dependent Claim
24 words
A method of producing a semiconductor device according to claim 15, wherein said non-single semiconductor layer includes an amorphous semiconductor material containing silicon atoms.
Claim 19
Dependent Claim
34 words
A method of producing a semiconductor device according to claim 10, wherein said semiconductor device is a device selected from the group consisting of a photovoltaic device, a photosensor, and a liquid crystal device.
Claim 20
Dependent Claim
17 words
A method of producing a semiconductor device according to claim 10, wherein said material comprises a metal.
Claim 21
Dependent Claim
39 words
A method of producing a semiconductor device according to claim 10, wherein said paste is disposed on the material in such a manner that the thickness of said paste is in the range from 10 μm to 2 mm.
Claim 22
Dependent Claim
17 words
A method of producing a semiconductor device according to claim 10, wherein said paste further includes glycerin.
Claim 23
Dependent Claim
37 words
A method of producing a semiconductor device according to claim 10, wherein said semiconductor device includes a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer, said layers being arranged in the above-described order.
Claim 24
Dependent Claim
26 words
A method of producing a semiconductor device according to claim 10, wherein said method further comprises removing said paste after said step of performing heat treatment.
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