Abstract A method for producing for a SOI type bonded substrate for semiconductor integrated circuits which has a void areal ratio which approaches or is equal to zero %, when heat treated at temperatures on the order of 1250 DEG C. The method involves: superimposing a Si single crystal wafer having a main surface of which is covered by a Si polycrystal layer, beneath which Si single crystal islands are formed on the main surface and are isolated from each other by V grooves with interposition of a dielectric film, which V grooves are filled up by the Si polycrystal layer, and a support made from Si material between the Si polycrystal layer and a surface of the support with a dielectrically insulating layer sandwiched therebetween; and conducting heat treatment of the superimposed Si single crystal wafer and the support to effect bonding therebetween. According to the method any P-V value of recesses between the Si single crystal islands and the V grooves which are formed on the bonding surface of the Si polycrystal layer are set at 13 nm/250x250 mu m2 or less; and the heat treatment is conducted at a temperature in the range of 1100 DEG C. to 1250 DEG C.
A method for producing a substrate for semiconductor integrated circuits comprising the following steps of: forming V grooves in a main surface of a first Si single crystal wafer; forming an oxide layer on the main surface of the first Si single crystal wafer and on an inner surface of each groove in the main surface; depositing a Si polycrystal layer on the main surface to fill up the grooves; smoothing a surface of the Si polycrystal layer to reduce P-V values of any recesses to be within the range of 13 nm/250×250 μm 2 or less where a P-V value is defined as the maximum depth measured in nm from the highest point of adjacent plateaus to the lowest bottom of recess within a limited area of 250×250 μm 2 around the recess; forming an oxide layer on a main surface of a second Si wafer support; superimposing the Si polycrystal layer 4 and the support with a dielectrically insulating layer lying therebetween; conducting heat treatment of the superimposed Si single crystal wafer and the support at a temperature in the range of 1100° C. to 1250° C. to effect bonding therebetween; and removing portions of another main surface region of the first silicon wafer to form isolated islands.
Claim 2
Independent Claim
210 words
A method for producing a substrate for semiconductor integrated circuits comprising the following steps of: forming V grooves in a main surface of a first Si single crystal wafer; forming an oxide layer on the main surface of the first Si single crystal wafer and on an inner surface of each groove in the main surface; depositing a Si polycrystal layer on the main surface to fill up the grooves; smoothing a surface of the Si polycrystal layer to reduce P-V values of any recesses to be within the range of 13 nm/250×250 μm 2 or less where a P-V value is defined as the maximum depth measured in nm from the highest point of adjacent plateaus to the lowest bottom of recess within a limited area of 250×250 μm 2 around the recess; forming an oxide layer on a main surface of a second Si wafer support; superimposing the Si polycrystal layer 4 and the support with a dielectrically insulating layer lying therebetween; conducting heat treatment of the superimposed Si single crystal wafer and the support at a temperature in the range of 1100° C. to 1250° C. to effect bonding therebetween; and removing portions of another main surface region of the first silicon wafer to form isolated islands.
Claim 3
Dependent Claim
38 words
A method for producing a substrate for semiconductor integrated circuits as claimed in claim 1, wherein the dielectrically insulating layer is made of silicon oxide and has a thickness in the range of 13 nm to 2000 nm.
Claim 4
Dependent Claim
32 words
A method for producing a substrate for semiconductor integrated circuits as claimed in claim 2, wherein the dielectrically insulating layer has a thickness in the range of 12 nm to 1500 nm.
Claim 5
Dependent Claim
47 words
A method for producing a substrate for semiconductor integrated circuits as claimed in claim 1 wherein the heat treatment for bonding is conducted at a temperature in the range of 1100° C. to 1250° C. and a time period in the range of 3 hours or less.