Dielectric isolation substrate and manufacture thereof

Abstract

Abstract PURPOSE:To so deposit a polycrystalline Si film that the polished face becomes flat by depositing a polycrystalline film in which the sizes of crystalline grains are substantially uniform and crystal orientation and shape are not directed in specific directions on a semiconductor substrate formed with grooves. CONSTITUTION:Isolating grooves 2 are formed on an Si single crystal substrate 1 having an N-type plane (100), and an SiO2 film 3 is formed by steam oxidation. A polycrystalline Si film 4 is deposited by a chemical vapor growth method. In this case, high concentration material gas is used to deposit fine particles generated in the gas above the substrate are deposited on the board in a reaction vessel, and the gaps of the particles are filled with Si grown by the surface reaction. Thus, homogeneous polycrystalline Si is grown on the flat face and in the grooves. Thus, the grooves are filled with the polycrystalline layer in which the shape and direction of the grains are not directed in specific directions thereby to improve the flatness of the polished face of the surface of the layer.

Inventors

• 👤 Minoru Tanaka
• 👤 実 田中
• 👤 Hironori Inoue
• 👤 洋典 井上
• 👤 Yasuhiro Mochizuki
• 👤 康弘 望月

Bibliographic Details