Semiconductor device and process for fabricating the same

Claim 2

A process for fabricating a semiconductor device comprising: forming a member comprising a gate electrode and wiring of a transistor and one of a pair of electrodes of a capacitor from a material selected from aluminum, titanium, tantalum, chromium, molybdenum, silicon, and tungsten; forming an oxide layer on a surface of the member; cutting the member; forming a silicon nitride film covering the member and the oxide layer; and forming a pixel electrode on the silicon nitride film to form a capacitor comprising the member, the pixel electrode, the oxide layer and the silicon nitride film, wherein the silicon nitride film forming step is carried out after the cutting step.

Claim 3

The process of claim 1 wherein the oxide layer forming step is carried out by anodic oxidation.

Claim 4

The process of claim 1 wherein the oxide layer and the silicon nitride film are provided between the member and the pixel electrode.

Claim 5

The process of claim 1 wherein the pixel electrode is connected with one of source and drain of the transistor.

Claim 6

The process of claim 1 wherein the cutting step is carried out after the oxide layer forming step.

Claim 7

A process for fabricating a semiconductor device comprising: forming a member comprising a gate electrode and wiring of a transistor and one of a pair of electrodes of a capacitor from a material comprising aluminum; forming an oxide layer on a surface of the member; cutting the member; forming a silicon nitride film covering the member and the oxide layer; and forming a pixel electrode on the silicon nitride film to form a capacitor comprising the member, the pixel electrode, the oxide layer and the silicon nitride film, wherein the member contains an element selected from the group consisting of Ta, Ti, Si and Sc, wherein the silicon nitride film forming step is carried out after the cutting step.

Claim 8

A process for fabricating a semiconductor device comprising: forming a member comprising a gate electrode and wiring of a transistor and one of a pair of electrodes of a capacitor from a material comprising aluminum; forming an oxide layer on a surface of the member; cutting the member; forming a silicon nitride film covering the member and the oxide layer; and forming a pixel electrode on the silicon nitride film to form a capacitor comprising the member, the pixel electrode, the oxide layer and the silicon nitride film, wherein the member contains an element selected from the group consisting of Ta, Ti, Si and Sc, wherein the silicon nitride film forming step is carried out after the cutting step.

Claim 9

A process for fabricating a semiconductor device comprising: forming a wiring comprising an oxidizable material over a substance; forming a first insulating film comprising an oxide of said oxidizable material by oxidizing a surface of said wiring; cutting said wiring after oxidizing said surface so that a portion of said wiring is exposed; forming a second insulating film on said wiring after the cutting step; and then forming an electrode on said second insulating film so that a capacitor is formed between said wiring and said electrode with said second insulating film therebetween, wherein the exposed portion of said wiring is covered by said second insulating film.

Claim 10

A process for fabricating a semiconductor device comprising: forming a wiring comprising an oxidizable material over a substance; forming a first insulating film comprising an oxide of said oxidizable material by oxidizing a surface of said wiring; cutting said wiring after oxidizing said surface so that a portion of said wiring is exposed; forming a second insulating film on said wiring after the cutting step; and then forming an electrode on said second insulating film so that a capacitor is formed between said wiring and said electrode with said second insulating film therebetween, wherein the exposed portion of said wiring is covered by said second insulating film.

Claim 11

The process of claim 7 wherein said oxidizing step is carried out by anodic oxidation.

Claim 12

The process of claim 7 wherein said oxidizable material comprises a metal selected from aluminum, titanium, tantalum, chromium, molybdenum, silicon, and tungsten.

Claim 13

The process of claim 7 wherein said second insulating film comprises silicon nitride.

Claim 14

A process for fabricating an electro-optical device comprising: forming a transistor having source and drain regions over a substrate for switching a pixel; forming a wiring comprising an oxidizable material over said substrate; forming a first insulating film comprising an oxide of said oxidizable material by oxidizing a surface of said wiring; cutting said wiring after oxidizing said surface so that a portion of said wiring is exposed; forming a second insulating film on said wiring after the cutting step so that the exposed portion of said wiring is covered by said second insulating film; forming a pixel electrode on said second insulating film so that a capacitor is formed between said wiring and said electrode with said second insulating film therebetween, said capacitor being associated with said pixel; wherein said gate electrode is distant from at least one of said source and drain regions to provide an offset region adjacent to said at least one of the source and drain regions.

Claim 15

A process for fabricating an electro-optical device comprising: forming a transistor having source and drain regions over a substrate for switching a pixel; forming a wiring comprising an oxidizable material over said substrate; forming a first insulating film comprising an oxide of said oxidizable material by oxidizing a surface of said wiring; cutting said wiring after oxidizing said surface so that a portion of said wiring is exposed; forming a second insulating film on said wiring after the cutting step so that the exposed portion of said wiring is covered by said second insulating film; forming a pixel electrode on said second insulating film so that a capacitor is formed between said wiring and said electrode with said second insulating film therebetween, said capacitor being associated with said pixel; wherein said gate electrode is distant from at least one of said source and drain regions to provide an offset region adjacent to said at least one of the source and drain regions.

Claim 16

The process of claim 11 wherein said oxidizing step is carried out by anodic oxidation.

Claim 17

The process of claim 11 wherein said oxidizable material comprises a metal selected from aluminum, titanium, tantalum, chromium, molybdenum, silicon, and tungsten.

Claim 18

The process of claim 11 wherein said second insulating film comprises silicon nitride.

Claim 19

A process for fabricating an electro-optical device comprising the steps of: forming a semiconductor island comprising crystalline silicon over a substrate; forming a gate insulating film on said semiconductor island; forming a gate wiring over said substrate, said gate wiring comprising an oxidizable material and including a gate electrode located over said semiconductor island, the gate electrode having a side face; forming an oxide layer by oxidizing said gate wiring thereon; performing a first introduction of impurity ions into said semiconductor island using said gate electrode and said oxide layer as a first mask; forming side spacers adjacent to the side face of said gate electrode; performing a second introduction of impurity ions into said semiconductor island using said gate electrode, said oxide layer and said side spacers as a second mask; and depositing an insulating layer after the second introduction of impurity ions.

Claim 20

A process for fabricating an electro-optical device comprising the steps of: forming a semiconductor island comprising crystalline silicon over a substrate; forming a gate insulating film on said semiconductor island; forming a gate wiring over said substrate, said gate wiring comprising an oxidizable material and including a gate electrode located over said semiconductor island, the gate electrode having a side face; forming an oxide layer by oxidizing said gate wiring thereon; performing a first introduction of impurity ions into said semiconductor island using said gate electrode and said oxide layer as a first mask; forming side spacers adjacent to the side face of said gate electrode; performing a second introduction of impurity ions into said semiconductor island using said gate electrode, said oxide layer and said side spacers as a second mask; and depositing an insulating layer after the second introduction of impurity ions.

Claim 21

The process of claim 15 wherein said oxidizing step is carried out by anodic oxidation.

Claim 22

The process of claim 15 wherein said oxidizable material comprises a metal selected from aluminum, titanium, tantalum, chromium, molybdenum, silicon, and tungsten.

Claim 23

The process of claim 15 wherein said insulating layer comprises silicon nitride.