Patent US5685960A successfully refreshed from Google Patents.
US5685960A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming aluminum contacts
Assignee: Applied Materials Inc
•
Filing: 1995-11-27
•
Granted: 1997-11-11
•
Expires: 2015-11-27
Abstract
Abstract A process for making an aluminum contact comprising sputter depositing in a contact opening in a semiconductor substrate a first layer of titanium, forming a thin layer of titanium oxide thereover, sputter depositing a titanium nitride layer, smoothing the titanium nitride layer in an argon plasma, and sputter depositing an aluminum contact over the treated titanium nitride layer. The argon plasma treatment smooths the surface of the titanium nitride layer and improves the wettability between this layer and aluminum.
Inventors
- 👤 Jianming Fu
- 👤 Zheng Xu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:08
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/052; H10W20/0523; C; C23; C23C; C23C14/00; C23C14/02; C23C14/024; C23C14/025; C23C14/06; C23C14/14; C23C14/16; C23C14/165; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; H10P95/00; H10W20/033; H10W20/047; H10W20/048
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
96 words
A process for forming aluminum contacts which comprises the following sequential steps: a) sputter depositing a titanium layer onto a semiconductor substrate having a plurality of openings therein; b) forming an oxygen-containing titanium layer over the titanium layer; c) sputter depositing a titanium nitride layer over the oxygen-containing titanium layer; d) treating the surface of the titanium nitride layer with a plasma of argon to smooth said surface, all of the steps a) to d) being performed in the same sputtering chamber; and e) sputter depositing an aluminum layer over the plasma treated titanium nitride layer.
Claim 2
Dependent Claim
96 words
A process for forming aluminum contacts which comprises the following sequential steps: a) sputter depositing a titanium layer onto a semiconductor substrate having a plurality of openings therein; b) forming an oxygen-containing titanium layer over the titanium layer; c) sputter depositing a titanium nitride layer over the oxygen-containing titanium layer; d) treating the surface of the titanium nitride layer with a plasma of argon to smooth said surface, all of the steps a) to d) being performed in the same sputtering chamber; and e) sputter depositing an aluminum layer over the plasma treated titanium nitride layer.
Claim 3
Dependent Claim
28 words
A process according to claim 1 wherein during step d) an RF power supply is connected to the substrate support, thereby inducing a self bias to the substrate.
Claim 4
Dependent Claim
16 words
A process according to claim 1 wherein step e) is performed in a second sputtering chamber.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-11-10 | 2001-05-12 | 2001-11-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-11-10 | 2005-05-12 | 2005-11-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-11-10 | 2009-05-12 | 2009-11-11 | $7700.00 | Window Closed / Lapsed |