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US5684356A Expired / Lapsed US ⏱️ 0.0 years remaining

Hydrogen-rich, low dielectric constant gate insulator for field emission device

Assignee: Texas Instruments Inc
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Filing: 1996-03-29
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Granted: 1997-11-04
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Expires: 2016-03-29
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Abstract

Abstract An emitter structure 12 for use in a field emission display device comprises a ballast layer 17 overlying ah electrically conductive coating 16 (cathode electrode), which is itself formed on an electrically insulating substrate 18. A gate electrode comprises a coating of an electrically conductive material 22 which is deposited on an insulating layer 20. Cone-shaped microtips 14 formed within apertures 34 through conductive layer 22 and insulating layer 20. In the present invention, insulating layer 20 comprises a dielectric material capable of desorbing at least ten atomic percent hydrogen, which may illustratively comprise hydrogen silsesquioxane (HSQ). HSQ is an abundant source of hydrogen which keeps deleterious oxides from forming on microtip emitters 14. HSQ also reduces the capacitance formed by cathode electrode 16 and gate electrode 22, since its relative dielectric constant is less than 3.5. In alternative embodiments, the gate insulation layer 20 additionally includes one or more sublayers of a more dense insulating material 20b and 20c, typically a plasma deposited silicon dioxide.

Inventors

  • 👤 Shin-puu Jeng
  • 👤 Bruce E. Gnade

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 09:27
CPC Classifications
H; H01; H01J; H01J1/00; H01J1/02; H01J1/30; H01J1/304; H01J1/3042; C; C01; C01B; C01B3/00; C01B3/02; H01J29/00; H01J29/94; H01J9/00; H01J9/02; H01J9/022; H01J9/025; H01J2201/00; H01J2201/30; H01J2201/319; H01J2329/00

Claims Analysis

Total Claims: 19
Claim 1
Independent Claim 67 words
Electron emission apparatus comprising: a first conductive layer; an insulating layer over said first conductive layer; a second conductive layer on said insulating layer, said second conductive layer having a plurality of apertures extending therethrough and through said insulating layer; and microtip emitters on said first conductive layer, each emitter formed within a corresponding aperture in said second conductive layer, said insulating layer comprising hydrogen silsesquioxane (HSQ).
Claim 2
Dependent Claim 67 words
Electron emission apparatus comprising: a first conductive layer; an insulating layer over said first conductive layer; a second conductive layer on said insulating layer, said second conductive layer having a plurality of apertures extending therethrough and through said insulating layer; and microtip emitters on said first conductive layer, each emitter formed within a corresponding aperture in said second conductive layer, said insulating layer comprising hydrogen silsesquioxane (HSQ).
Claim 3
Dependent Claim 19 words
The apparatus in accordance with claim 1 wherein said insulating layer has a relative dielectric constant less than 3.5.
Claim 4
Dependent Claim 39 words
The apparatus in accordance with claim 1 wherein said insulating layer comprises a first insulating sublayer including hydrogen silsesquioxane and a second, relatively thinner insulating sublayer of silicon dioxide, said second insulating sublayer being adjacent said second conductive layer.
Claim 5
Dependent Claim 39 words
The apparatus in accordance with claim 1 wherein said insulating layer comprises a first insulating sublayer including hydrogen silsesquioxane and a second, relatively thinner insulating sublayer of silicon dioxide, said second insulating sublayer being adjacent said first conductive layer.
Claim 6
Dependent Claim 29 words
The apparatus in accordance with claim 1 wherein said insulating layer comprises a first insulating sublayer including hydrogen silsesquioxane sandwiched between two relatively thinner insulating sublayers of silicon dioxide.
Claim 7
Dependent Claim 21 words
The apparatus in accordance with claim 1 further including means for applying a potential between said first and second conductive layers.
Claim 8
Dependent Claim 29 words
The apparatus in accordance with claim 1 further including a ballast layer intermediate said first conductive layer and said insulating layer, said microtip emitters resting on said ballast layer.
Claim 9
Dependent Claim 116 words
An electron emission display apparatus comprising: an emitter structure including an insulating substrate, a first conductive layer on said insulating substrate, an insulating layer over said first conductive layer, said insulating layer comprising hydrogen silsesquioxane (HSQ), a second conductive layer on said insulating layer, said second conductive layer having a plurality of apertures extending therethrough and through said insulating layer, and microtip emitters on said first conductive layer, each emitter formed within a corresponding aperture in said second conductive layer; and a display panel having a substantially planar face opposing said emitter structure, said display panel comprising a substantially transparent substrate, a transparent anode electrode on said transparent substrate, and luminescent material overlying said anode electrode.
Claim 10
Dependent Claim 116 words
An electron emission display apparatus comprising: an emitter structure including an insulating substrate, a first conductive layer on said insulating substrate, an insulating layer over said first conductive layer, said insulating layer comprising hydrogen silsesquioxane (HSQ), a second conductive layer on said insulating layer, said second conductive layer having a plurality of apertures extending therethrough and through said insulating layer, and microtip emitters on said first conductive layer, each emitter formed within a corresponding aperture in said second conductive layer; and a display panel having a substantially planar face opposing said emitter structure, said display panel comprising a substantially transparent substrate, a transparent anode electrode on said transparent substrate, and luminescent material overlying said anode electrode.
Claim 11
Dependent Claim 21 words
The electron emission display apparatus in accordance with claim 8 wherein said insulating layer has a dielectric constant less than 3.5.
Claim 12
Dependent Claim 42 words
The electron emission display apparatus in accordance with claim 8 wherein said insulating layer comprises a first insulating layer including hydrogen silsesquioxane and a second, relatively thinner insulating layer of silicon dioxide, said second insulating layer being adjacent said second conductive layer.
Claim 13
Dependent Claim 42 words
The electron emission display apparatus in accordance with claim 8 wherein said insulating layer comprises a first insulating sublayer including hydrogen silsesquioxane and a second, relatively thinner insulating sublayer of silicon dioxide, said second insulating sublayer being adjacent said first conductive layer.
Claim 14
Dependent Claim 32 words
The electron emission display apparatus in accordance with claim 8 wherein said insulating layer comprises a first insulating sublayer including hydrogen silsesquioxane sandwiched between two relatively thinner insulating sublayers of silicon dioxide.
Claim 15
Dependent Claim 25 words
The electron emission display apparatus in accordance with claim 8 further including means for applying a first potential between said first and second conductive layers.
Claim 16
Dependent Claim 36 words
The electron emission display apparatus in accordance with claim 13 further including means for applying a second potential between said first conductive layer and said anode electrode, said second potential being greater than said first potential.
Claim 17
Dependent Claim 32 words
The electron emission display apparatus in accordance with claim 8 further including a ballast layer intermediate said first conductive layer and said insulating layer, said microtip emitters resting on said ballast layer.
Claim 18
Independent Claim 66 words
A method of controlling the partial pressure of gases within a substantially evacuated cavity of a device, said cavity formed between first and second substrates which are sealed at peripheral regions thereof, one of said first and second substrates including a layer of hydrogen silsesquioxane (HSQ), said method comprising the step of: heating said device to cause the release of hydrogen from said layer of HSQ.
Claim 19
Independent Claim 66 words
A method of controlling the partial pressure of gases within a substantially evacuated cavity of a device, said cavity formed between first and second substrates which are sealed at peripheral regions thereof, one of said first and second substrates including a layer of hydrogen silsesquioxane (HSQ), said method comprising the step of: heating said device to cause the release of hydrogen from said layer of HSQ.

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3.5 Years (Year 4) 2000-11-03 2001-05-05 2001-11-04 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2004-11-03 2005-05-05 2005-11-04 $3760.00 Window Closed / Lapsed
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