Patent US3347045A successfully refreshed from Google Patents.
Patent US5682350A successfully refreshed from Google Patents.
US5682350A
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Flash memory with divided bitline
Assignee: Callahan Cellular LLC
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Filing: 1996-10-07
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Granted: 1997-10-28
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Expires: 2016-10-07
Abstract
Abstract A flash memory includes a bank of flash transistors forming a plurality of rows and a plurality of columns, each flash transistor having a gate, drain and source, where the gates of flash transistors in each row are coupled to common wordlines, the drains of flash transistors in each column are coupled to common metal 1 lines divided into even metal 1 lines and odd metal 1 lines and the sources of the flash transistors are coupled to a common sourceline. A set of first selection transistors are coupled between even metal 1 lines and metal 2 lines having a pitch twice that of said metal 1 lines and controlled by a first select signal to selectively couple the even metal 1 lines to the metal 2 lines. A set of second selection transistors are coupled between odd metal 1 lines and the metal 2 lines and controlled by a second select signal to selectively couple the odd metal 1 lines to the metal 2 lines. In one embodiment, the set of first selection transistors and the set of second selection transistors are large in comparison to the flash transistors. Advantages of the invention include improved selection of memory cells, higher memory cell density and lower resistance in the memory cell selection circuitry.
Inventors
- 👤 Peter W. Lee
- 👤 Hsing-Ya Tsao
- 👤 Fu-Chang Hsu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 13:38
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/34; G11C16/3404; G11C16/3409; G11C11/00; G11C11/56; G11C11/5621; G11C11/5628; G11C11/5635; G11C11/5642; G11C16/04; G11C16/0408; G11C16/0416; G11C16/0491; G11C16/08; G11C16/10; G11C16/14; G11C16/16; G11C16/3413; G11C16/3418; G11C16/3427; G11C16/3431; G11C8/00; G11C8/08; G11C8/10; H; H10; H10B; H10B69/00; G11C16/24; G11C2211/00; G11C2211/56; G11C2211/564; G11C2211/5642; G11C2211/5644; G11C2216/00; G11C2216/12; G11C2216/20; G11C7/00; G11C7/10; G11C7/1006; G11C7/18; G11C8/14
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
162 words
A flash memory comprising: a first bank of flash transistors forming a plurality of rows and a plurality of columns, each flash transistor having a gate, drain and source, where the gates of flash transistors in each row are coupled to common wordlines, the drains of flash transistors in each column are coupled to common conductor 1 lines and the sources of the flash transistors are coupled to a first sourceline; a first selection transistor coupled between a first conductor 1 line and a first of a plurality of conductor 2 lines having a pitch twice that of said conductor 1 lines and controlled by a first select signal to selectively couple said first conductor 1 line and said first conductor 2 line; and a second selection transistor coupled between a second conductor 1 line and said first conductor 2 line and controlled by a second select signal to selectively couple said second conductor 1 line and said first conductor 2 line.
Claim 2
Dependent Claim
162 words
A flash memory comprising: a first bank of flash transistors forming a plurality of rows and a plurality of columns, each flash transistor having a gate, drain and source, where the gates of flash transistors in each row are coupled to common wordlines, the drains of flash transistors in each column are coupled to common conductor 1 lines and the sources of the flash transistors are coupled to a first sourceline; a first selection transistor coupled between a first conductor 1 line and a first of a plurality of conductor 2 lines having a pitch twice that of said conductor 1 lines and controlled by a first select signal to selectively couple said first conductor 1 line and said first conductor 2 line; and a second selection transistor coupled between a second conductor 1 line and said first conductor 2 line and controlled by a second select signal to selectively couple said second conductor 1 line and said first conductor 2 line.
Claim 3
Dependent Claim
24 words
The flash memory of claim 1, wherein: said first selection transistor and said second selection transistor are large in comparison to said flash transistors.
Claim 4
Dependent Claim
85 words
The flash memory of claim 1, further comprising: a third selection transistor coupled between a third conductor 1 line and a second conductor 2 line and controlled by said first select signal to selectively couple said third conductor 1 line and said second conductor 2 line; and a fourth selection transistor coupled between a fourth conductor 1 line and said second conductor 2 line and controlled by said second select signal to selectively couple said fourth conductor 1 line and said second conductor 2 line.
Claim 5
Dependent Claim
32 words
The flash memory of claim 3, wherein: said first selection transistor, said second selection transistor, said third selection transistor and said fourth selection transistor are large in comparison to said flash transistors.
Claim 6
Dependent Claim
152 words
The flash memory of claim 1, further comprising: a second bank of flash transistors forming a plurality of rows and a plurality of columns, each flash transistor having a gate, drain and source, where the gates of flash transistors in each row are coupled to common wordlines, the drains of flash transistors in each column are coupled to common conductor 1 lines and the sources of the flash transistors are coupled to said first sourceline; a third selection transistor coupled between a third conductor 1 line and said first conductor 2 line and controlled by a third select signal to selectively couple said third conductor 1 line and said first conductor 2 line; and a fourth selection transistor coupled between a fourth conductor 1 line and said first conductor 2 line and controlled by a fourth select signal to selectively couple said fourth conductor 1 line and said first conductor 2 line.
Claim 7
Dependent Claim
32 words
The flash memory of claim 5, wherein: said first selection transistor, said second selection transistor, said third selection transistor and said fourth selection transistor are large in comparison to said flash transistors.
Claim 8
Dependent Claim
165 words
A flash memory comprising: a bank of flash transistors forming a plurality of rows and a plurality of columns, each flash transistor having a gate, drain and source, where the gates of flash transistors in each row are coupled to common wordlines, the drains of flash transistors in each column are coupled to common conductor 1 lines divided into even conductor 1 lines and odd conductor 1 lines and the sources of the flash transistors are coupled to a common sourceline; a set of first selection transistors coupled between even conductor 1 lines and conductor 2 lines having a pitch twice that of said conductor 1 lines and controlled by a first select signal to selectively couple said even conductor 1 lines to said conductor 2 lines; and a set of second selection transistors coupled between odd conductor 1 lines and said conductor 2 lines and controlled by a second select signal to selectively couple said odd conductor 1 lines to said conductor 2 lines.
Claim 9
Dependent Claim
165 words
A flash memory comprising: a bank of flash transistors forming a plurality of rows and a plurality of columns, each flash transistor having a gate, drain and source, where the gates of flash transistors in each row are coupled to common wordlines, the drains of flash transistors in each column are coupled to common conductor 1 lines divided into even conductor 1 lines and odd conductor 1 lines and the sources of the flash transistors are coupled to a common sourceline; a set of first selection transistors coupled between even conductor 1 lines and conductor 2 lines having a pitch twice that of said conductor 1 lines and controlled by a first select signal to selectively couple said even conductor 1 lines to said conductor 2 lines; and a set of second selection transistors coupled between odd conductor 1 lines and said conductor 2 lines and controlled by a second select signal to selectively couple said odd conductor 1 lines to said conductor 2 lines.
Claim 10
Dependent Claim
28 words
The flash memory of claim 7, wherein: said set of first selection transistors and said set of second selection transistors are large in comparison to said flash transistors.
Claim 11
Independent Claim
187 words
A method of manufacturing a flash memory, comprising the steps of: forming a bank of flash transistors in a plurality of rows and a plurality of columns, each flash transistor having a gate, drain and source, where the gates of flash transistors in each row are coupled to common wordlines, the drains of flash transistors in each column are coupled to common conductor 1 lines divided into even conductor 1 lines and odd conductor 1 lines and the sources of the flash transistors are coupled to a common sourceline; forming a set of first selection transistors; coupling said set of first selection transistors between even conductor 1 lines and conductor 2 lines having a pitch twice that of said conductor 1 lines and controlled by a first select signal to selectively couple said even conductor 1 lines to said conductor 2 lines; forming a set of second selection transistors; and coupling said set of second selection transistors between odd conductor 1 lines and said conductor 2 lines and controlled by a second select signal to selectively couple said odd conductor 1 lines to said conductor 2 lines.
Claim 12
Independent Claim
187 words
A method of manufacturing a flash memory, comprising the steps of: forming a bank of flash transistors in a plurality of rows and a plurality of columns, each flash transistor having a gate, drain and source, where the gates of flash transistors in each row are coupled to common wordlines, the drains of flash transistors in each column are coupled to common conductor 1 lines divided into even conductor 1 lines and odd conductor 1 lines and the sources of the flash transistors are coupled to a common sourceline; forming a set of first selection transistors; coupling said set of first selection transistors between even conductor 1 lines and conductor 2 lines having a pitch twice that of said conductor 1 lines and controlled by a first select signal to selectively couple said even conductor 1 lines to said conductor 2 lines; forming a set of second selection transistors; and coupling said set of second selection transistors between odd conductor 1 lines and said conductor 2 lines and controlled by a second select signal to selectively couple said odd conductor 1 lines to said conductor 2 lines.
Claim 13
Dependent Claim
65 words
The method of claim 9, wherein: said step of forming a set of first selection transistors is performed by forming a set of first selection transistors that are large in comparison to said flash transistors; and said step of forming a set of second selection transistors is performed by forming a set of second selection transistors that are large in comparison to said flash transistors.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-10-27 | 2001-04-28 | 2001-10-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-10-27 | 2005-04-28 | 2005-10-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-10-27 | 2009-04-28 | 2009-10-28 | $7700.00 | Window Closed / Lapsed |