Patent US5677572A successfully refreshed from Google Patents.
US5677572A
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Bilayer electrode on a n-type semiconductor
Assignee: Global OLED Technology LLC
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Filing: 1996-07-29
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Granted: 1997-10-14
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Expires: 2016-07-29
Abstract
Abstract An electrode in contact with a n-type semiconductor for use in an electronic or optoelectronic device is disclosed. The electrode includes a non-conducting layer contacting the semiconductor; a conductive layer contacting the non-conducting layer, and the materials and the thickness of the non-conducting layer being selected so that the bilayer forms a low-resistance contact to the semiconductor, the bilayer providing stability against atmospheric corrosion.
Inventors
- 👤 Liang-Sun Hung
- 👤 Ching Wan Tang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 12:44
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/20; H10F77/244; H10D; H10D62/00; H10D62/80; H10D62/85; H10D64/00; H10D64/60; H10D64/62; H10F77/247; H10K; H10K50/00; H10K50/80; H10K50/805; H10K50/82; H10K50/826; H10K71/00; H10K71/60; H10K85/00; H10K85/30; H10K85/311; H10K85/321; H10K85/324; H10K85/60; H10K85/631
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
82 words
A bilayer electrode in contact with a n-type semiconductor, comprising: a) a thin non-conducting layer contacting the n-type semiconductor, the layer having a strong dipole character such as alkali or alkaline earth metal fluorides or oxides; b) a conductive layer contacting the non-conducting layer, the layer having a good stability against atmospheric oxidation; and c) the thickness of the non-conducting layer being selected so that the bilayer forms a contact with a low barrier height, the bilayer providing stability against atmospheric corrosion.
Claim 2
Dependent Claim
82 words
A bilayer electrode in contact with a n-type semiconductor, comprising: a) a thin non-conducting layer contacting the n-type semiconductor, the layer having a strong dipole character such as alkali or alkaline earth metal fluorides or oxides; b) a conductive layer contacting the non-conducting layer, the layer having a good stability against atmospheric oxidation; and c) the thickness of the non-conducting layer being selected so that the bilayer forms a contact with a low barrier height, the bilayer providing stability against atmospheric corrosion.
Claim 3
Dependent Claim
17 words
The electrode of claim 1 wherein the n-type semiconductor is selected from an inorganic or organic semiconductor.
Claim 4
Dependent Claim
20 words
The electrode of claim 2 wherein inorganic semiconductor includes CdS, GaS, ZnS, CdSe, GaSe, ZnSe, CdTe, GaTe, SiC, and Si.
Claim 5
Dependent Claim
23 words
The electrode of claim 2 wherein the organic semiconductor includes poly(paraphenylene vinylene) (PPV), PPV copolymers and derivatives, polyaniline, poly(3-alkylthiophene), poly(3-octylthiophene), poly(paraphenylene), and Alq.
Claim 6
Dependent Claim
21 words
The electrode of claim 1 wherein the thickness of the non-conductive layer is in the range of 0.3 to 5.0 nm.
Claim 7
Dependent Claim
14 words
The electrode of claim 1 wherein the non-conductive materials have a strong dipole character.
Claim 8
Dependent Claim
28 words
The electrode of claim 6 wherein said the non-conductive layer is selected from an alkali fluoride, an alkaline earth fluoride, an alkali oxide, or an alkaline earth oxide.
Claim 9
Dependent Claim
21 words
The electrode of claim 7 wherein said alkali fluoride includes lithium fluoride, sodium fluoride, potassium fluoride, rubidium fluoride, or cesium fluoride.
Claim 10
Dependent Claim
20 words
The electrode of claim 7 wherein said alkaline earth fluoride includes magnesium fluoride, calcium fluoride, strontium fluoride, or barium fluoride.
Claim 11
Dependent Claim
21 words
The electrode of claim 7 wherein said alkali oxide includes lithium oxide, sodium oxide, potassium oxide, rubidium oxide, or cesium oxide.
Claim 12
Dependent Claim
20 words
The electrode of claim 7 wherein said alkaline earth oxide includes magnesium oxide, calcium oxide, strontium oxide, or barium oxide.
Claim 13
Dependent Claim
25 words
The electrode of claim 1 wherein said conductive layer can be selected from the group consisting of elemental metal, metal alloys, oxides, nitrides, and sulfides.
Claim 14
Dependent Claim
23 words
The electrode of claim 12 wherein suitable metal oxides include indium-tin-oxide, aluminum- or indium-doped zinc oxide, tin oxide, magnesium-indium-oxide, nickel-tungsten oxide, and cadmium-tin-oxide.
Claim 15
Dependent Claim
15 words
The electrode of claim 12 wherein the nitride is GaN and the sulfide is ZnS.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-10-13 | 2001-04-14 | 2001-10-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-10-13 | 2005-04-14 | 2005-10-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-10-13 | 2009-04-14 | 2009-10-14 | $7700.00 | Window Closed / Lapsed |