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Patent US5677243A successfully refreshed from Google Patents.
US5677243A
Expired / Lapsed
US
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Method of forming multi-layer interconnection
Assignee: Renesas Electronics Corp
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Filing: 1996-03-13
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Granted: 1997-10-14
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Expires: 2016-03-13
Abstract
Abstract A method of forming a multi-layer interconnection is provided by which a resist pattern can be precisely formed by maintaining a uniform resist pattern film thickness and such problems as reduced electric resistance of a connecting portion and defective connection between a first interconnection layer and a second interconnection layer will not occur by ensuring a sufficient diameter of a contact hole. The method includes the steps of: removing a portion of an insulating layer having a main surface and covering a first conductive layer to form a hole reaching the first conductive layer in the insulating layer; forming an organic layer at least filling the hole; removing a portion of the insulating layer at a portion at which the insulating layer contacts an organic layer filling the hole; removing the organic layer filling the hole to form a recessed portion continuous to the hole in the insulating layer; and forming a second conductive layer in such a manner that it fills the hole and the recessed portion.
Inventors
- 👤 Akihiko Ohsaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 05:37
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42; H10W20/01; H10W20/071; H10W20/081; H10W20/084; H10W20/085; H10W20/031; H10W20/056; H10W20/0886
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
108 words
A method of forming a multi-layer interconnection, comprising the steps of: removing a portion of an insulating layer having a main surface and covering a first conductive layer formed on a semiconductor substrate to form a hole reaching said first conductive layer in said insulating layer; forming an organic layer at least filling said hole; removing a portion of said insulating layer contacting said organic layer filling said hole; removing said organic layer filling said hole to form a recessed portion continuous to said hole in said insulating layer; and forming a second conductive layer in such a manner that it fills said hole and said recessed portion.
Claim 2
Independent Claim
108 words
A method of forming a multi-layer interconnection, comprising the steps of: removing a portion of an insulating layer having a main surface and covering a first conductive layer formed on a semiconductor substrate to form a hole reaching said first conductive layer in said insulating layer; forming an organic layer at least filling said hole; removing a portion of said insulating layer contacting said organic layer filling said hole; removing said organic layer filling said hole to form a recessed portion continuous to said hole in said insulating layer; and forming a second conductive layer in such a manner that it fills said hole and said recessed portion.
Claim 3
Dependent Claim
41 words
The method of forming a multi-layer interconnection according to claim 1, wherein the step of forming said hole includes forming a resist pattern on the main surface of said insulating layer and removing said insulating layer according to said resist pattern.
Claim 4
Dependent Claim
55 words
The method of forming a multi-layer interconnection according to claim 1, wherein the step of forming said organic layer includes filling said hole with an organic layer while forming an organic layer on the main surface of said insulating layer, and etching back the organic layer until the main surface of said insulating layer appears.
Claim 5
Dependent Claim
45 words
The method of forming a multi-layer interconnection according to claim 1, wherein the step of removing a portion of said insulating layer includes forming a resist pattern on the main surface of said insulating layer and removing said insulating layer according to said resist pattern.
Claim 6
Dependent Claim
44 words
The method of forming a multi-layer interconnection according to claim 1, wherein said first conductive layer is at least one component selected from the group consisting of an impurity region formed in said semiconductor substrate and an interconnection layer formed on said semiconductor substrate.
Claim 7
Dependent Claim
29 words
The method of forming a multi-layer interconnection according to claim 1, wherein said first and second conductive layers includes a portion having a width of less than 0.5 μm.
Claim 8
Independent Claim
136 words
A method of forming a multi-layer interconnection, comprising the steps of: removing a portion of an insulating layer having a main surface and covering a first conductive layer formed on a semiconductor substrate to form a hole reaching said first conductive layer in said insulating layer; forming an organic layer in such a manner that it fills said hole and covers the main surface of said insulating layer; removing a portion of said insulating layer contacting said organic layer filling said hole, and a portion of said organic layer formed on the portion of said insulating layer; removing said organic layer filling said hole to form a recessed portion continuous to said hole in said insulating layer; and forming a second conductive layer in such a manner that it fills said hole and said recessed portion.
Claim 9
Independent Claim
136 words
A method of forming a multi-layer interconnection, comprising the steps of: removing a portion of an insulating layer having a main surface and covering a first conductive layer formed on a semiconductor substrate to form a hole reaching said first conductive layer in said insulating layer; forming an organic layer in such a manner that it fills said hole and covers the main surface of said insulating layer; removing a portion of said insulating layer contacting said organic layer filling said hole, and a portion of said organic layer formed on the portion of said insulating layer; removing said organic layer filling said hole to form a recessed portion continuous to said hole in said insulating layer; and forming a second conductive layer in such a manner that it fills said hole and said recessed portion.
Claim 10
Dependent Claim
41 words
The method of forming an multi-layer interconnection according to claim 7, wherein the step of forming said hole includes forming a resist pattern on the main surface of said insulating layer and removing said insulating layer according to said resist pattern.
Claim 11
Dependent Claim
52 words
The method of forming an multi-layer interconnection according to claim 7, wherein the step of removing a portion of said insulating layer and a portion of said organic layer includes forming a resist pattern on said organic layer and removing said insulating layer and said organic layer according to said resist pattern.
Claim 12
Dependent Claim
44 words
The method of forming a multi-layer interconnection according to claim 7, wherein said first conductive layer is at least one component selected from the group consisting of an impurity region formed in said semiconductor substrate and an interconnection layer formed on said semiconductor substrate.
Claim 13
Dependent Claim
29 words
The method of forming a multi-layer interconnection according to claim 7, wherein said first and second conductive layers include a portion having a width of less than 0.5 μm.
Claim 14
Dependent Claim
19 words
The method of forming a multi-layer interconnection according to claim 7, wherein said organic layer contains an antireflection material.
Claim 15
Independent Claim
138 words
A method of forming a multi-layer interconnection, comprising the steps of: removing a portion of a first insulating layer having a main surface and covering a first conductive layer formed on a semiconductor substrate to form a first hole reaching said first conductive layer in said first insulating layer; forming an organic layer at least filling said first hole; forming a second insulating layer on said organic layer and said first insulating layer main surface; removing a portion of said second insulating layer to form a second hole reaching said organic layer filling said first hole in said second insulating layer; removing said organic layer filling said first hole to communicate said first hole with said second hole; and forming a second conductive layer in such a manner that it fills said first hole and said second hole.
Claim 16
Independent Claim
138 words
A method of forming a multi-layer interconnection, comprising the steps of: removing a portion of a first insulating layer having a main surface and covering a first conductive layer formed on a semiconductor substrate to form a first hole reaching said first conductive layer in said first insulating layer; forming an organic layer at least filling said first hole; forming a second insulating layer on said organic layer and said first insulating layer main surface; removing a portion of said second insulating layer to form a second hole reaching said organic layer filling said first hole in said second insulating layer; removing said organic layer filling said first hole to communicate said first hole with said second hole; and forming a second conductive layer in such a manner that it fills said first hole and said second hole.
Claim 17
Dependent Claim
44 words
A method of forming a multi-layer interconnection according to claim 13, wherein the step of forming said first hole includes forming a resist pattern on the main surface of said first insulating layer and removing said first insulating layer according to said resist pattern.
Claim 18
Dependent Claim
58 words
The method of forming a multi-layer interconnection according to claim 13, wherein the step of forming said organic layer includes filling said first hole with an organic layer while forming an organic layer on the main surface of said first insulating layer, and etching back the organic layer until the main surface of said first insulating layer appears.
Claim 19
Dependent Claim
44 words
The method of forming a multi-layer interconnection according to claim 13, wherein the step of forming said second hole includes forming a resist pattern on a main surface of said second insulating layer and removing said second insulating layer according to said resist patter.
Claim 20
Dependent Claim
34 words
The method of forming a multi-layer interconnection according to claim 13, wherein the step of forming said second insulating layer includes forming said second insulating layer at a temperature which said organic layer withstands.
Claim 21
Dependent Claim
44 words
The method of forming a multi-layer interconnection according to claim 13, wherein said first conductive layer is at least one component selected from the group consisting of an impurity region formed in said semiconductor substrate and an interconnection layer formed on said semiconductor substrate.
Claim 22
Dependent Claim
29 words
The method of forming a multi-layer interconnection according to claim 13, wherein said first and second conductive layers include a portion having a width of less than 0.5 μm.
Claim 23
Dependent Claim
16 words
The method according to claim 1, comprising forming the organic layer completely filling the said hole.
Claim 24
Dependent Claim
16 words
The method according to claim 7, comprising forming the organic layer completely filling the said hole.
Claim 25
Dependent Claim
16 words
The method according to claim 13, comprising forming the organic layer completely filling the said hole.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-10-13 | 2001-04-14 | 2001-10-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-10-13 | 2005-04-14 | 2005-10-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-10-13 | 2009-04-14 | 2009-10-14 | $7700.00 | Window Closed / Lapsed |