US5677229A
Expired / Lapsed
US
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Method for manufacturing semiconductor device isolation region
Assignee: Toshiba Corp
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Filing: 1995-04-28
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Granted: 1997-10-14
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Expires: 2015-04-28
Abstract
Abstract A method for manufacturing a semiconductor device of the present invention has the step of forming an insulation material on a main surface of a semiconductor substrate. A groove is formed to extend from the surface of the material film to the substrate. The groove is buried with a first insulation film. By use of the first insulation film as an etching mask, the material film is removed, so that a projecting portion projecting to the first insulation film from the main surface can be obtained. A second insulation film is formed on a side surface of the projecting portion in a sloped shape, which is from the top portion of the projecting portion to the main surface.
Inventors
- 👤 Shigeru Morita
- 👤 Fumitomo Matsuoka
- 👤 Hisao Yoshimura
- 👤 Takeo Maeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:21
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0148; H10W10/10; H10W10/17; Y; Y10; Y10S; Y10S438/00; Y10S438/978
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
179 words
A method of manufacturing a semiconductor device, the method comprising the steps of: forming a first material film over a main surface of a semiconductor substrate; forming a second material film on said first material film; patterning said first and second material films and using the patterned films as a mask for etching said substrate; partially etching said first and second material films and said substrate so as to form a groove in said substrate; burying at least said groove with an insulation film; polishing said insulation film, said second material film, and said first material film, while simultaneously performing etching by use of an etchant and using a process in which an etching rate of said second material film is larger than an etching rate of said insulation film and said etching rate of said insulation film is larger than an etching rate of said first material film so as to form a concave slope from a surface of said insulation film; and removing said first material film by use of said insulation film as an etching mask.
Claim 2
Independent Claim
179 words
A method of manufacturing a semiconductor device, the method comprising the steps of: forming a first material film over a main surface of a semiconductor substrate; forming a second material film on said first material film; patterning said first and second material films and using the patterned films as a mask for etching said substrate; partially etching said first and second material films and said substrate so as to form a groove in said substrate; burying at least said groove with an insulation film; polishing said insulation film, said second material film, and said first material film, while simultaneously performing etching by use of an etchant and using a process in which an etching rate of said second material film is larger than an etching rate of said insulation film and said etching rate of said insulation film is larger than an etching rate of said first material film so as to form a concave slope from a surface of said insulation film; and removing said first material film by use of said insulation film as an etching mask.
Claim 3
Dependent Claim
11 words
The method of claim 1, wherein said semiconductor substrate includes silicon.
Claim 4
Dependent Claim
13 words
The method of claim 1, wherein said first material film includes silicon nitride.
Claim 5
Dependent Claim
13 words
The method of claim 1, wherein said second material film includes polycrystalline silicon.
Claim 6
Dependent Claim
12 words
The method of claim 1, wherein said insulation film includes silicon oxide.
Claim 7
Dependent Claim
62 words
The method of claim 1, wherein during said polishing and etching said insulation film is etched gradually, and when said second material film is exposed said second material film is etched to a greater extent than said insulation film, an end portion of said insulation film is smoothly etched, and when said first material film is exposed an etching speed is slowed.
Claim 8
Independent Claim
206 words
A method of manufacturing a semiconductor device, the method comprising the steps of: forming a first material film over a main surface of a semiconductor substrate; forming a second material film on said first material film; patterning said first and second material films and using the patterned films as a mask for etching said substrate; partially etching said first and second material films and said substrate so as to form a groove in said substrate; implanting ions into a portion of said substrate exposed by said groove to form an inversion-preventing layer using said first and second material films as an ion implantation mask; burying at least said groove with an insulation film; polishing said insulation film, said second material film, and said first material film, while substantially simultaneously etching using an etchant and using a process in which an etching rate of said second material film is larger than an etching rate of said insulation film and said etching rate of said insulation film is larger than an etching rate of said first material film so as to form a concave slope on a surface of said insulation film; and removing said first material film by use of said insulation film as an etching mask.
Claim 9
Independent Claim
206 words
A method of manufacturing a semiconductor device, the method comprising the steps of: forming a first material film over a main surface of a semiconductor substrate; forming a second material film on said first material film; patterning said first and second material films and using the patterned films as a mask for etching said substrate; partially etching said first and second material films and said substrate so as to form a groove in said substrate; implanting ions into a portion of said substrate exposed by said groove to form an inversion-preventing layer using said first and second material films as an ion implantation mask; burying at least said groove with an insulation film; polishing said insulation film, said second material film, and said first material film, while substantially simultaneously etching using an etchant and using a process in which an etching rate of said second material film is larger than an etching rate of said insulation film and said etching rate of said insulation film is larger than an etching rate of said first material film so as to form a concave slope on a surface of said insulation film; and removing said first material film by use of said insulation film as an etching mask.
Claim 10
Dependent Claim
11 words
The method of claim 7, wherein said semiconductor substrate includes silicon.
Claim 11
Dependent Claim
13 words
The method of claim 7, wherein said first material film includes silicon nitride.
Claim 12
Dependent Claim
13 words
The method of claim 7, wherein said second material film includes polycrystalline silicon.
Claim 13
Dependent Claim
12 words
The method of claim 7, wherein said insulation film includes silicon oxide.
Claim 14
Dependent Claim
62 words
The method of claim 7, wherein during said polishing and etching said insulation film is etched gradually, and when said second material film is exposed said second material film is etched to a greater extent than said insulation film, an end portion of said insulation film is smoothly etched, and when said first material film is exposed an etching speed is slowed.
Claim 15
Dependent Claim
31 words
The method of claim 7, wherein said main surface of said semiconductor substrate is oxidized and said first material film is formed on said oxidized main surface of said semiconductor substrate.
Claim 16
Independent Claim
187 words
A method of manufacturing a semiconductor device, the method comprising the steps of: forming a first material film over a main surface of a semiconductor substrate; forming a second material film on said first material film; patterning said first and second material films and rising the patterned films as a mask for etching said substrate; partially etching said first and second material films and said substrate so as to form a groove in said substrate; burying at least said groove with an insulation film; polishing said insulation film, said second material film, and said first material film, while substantially simultaneously etching using an etchant and using a process in which an etching rate of said second material film is larger than an etching rate of said insulation film and said etching rate of said insulation film is larger than an etching rate of said first material film so as to form a concave slope on a surface of said insulation film, wherein said first material film acts as an etching stopper; and removing said first material film by use of said insulation film as an etching mask.
Claim 17
Independent Claim
187 words
A method of manufacturing a semiconductor device, the method comprising the steps of: forming a first material film over a main surface of a semiconductor substrate; forming a second material film on said first material film; patterning said first and second material films and rising the patterned films as a mask for etching said substrate; partially etching said first and second material films and said substrate so as to form a groove in said substrate; burying at least said groove with an insulation film; polishing said insulation film, said second material film, and said first material film, while substantially simultaneously etching using an etchant and using a process in which an etching rate of said second material film is larger than an etching rate of said insulation film and said etching rate of said insulation film is larger than an etching rate of said first material film so as to form a concave slope on a surface of said insulation film, wherein said first material film acts as an etching stopper; and removing said first material film by use of said insulation film as an etching mask.
Claim 18
Dependent Claim
11 words
The method of claim 14, wherein said semiconductor substrate includes silicon.
Claim 19
Dependent Claim
13 words
The method of claim 14, wherein said first material film includes silicon nitride.
Claim 20
Dependent Claim
13 words
The method of claim 14, wherein said second material film includes polycrystalline silicon.
Claim 21
Dependent Claim
12 words
The method of claim 14, wherein said insulation film includes silicon oxide.
Claim 22
Dependent Claim
62 words
The method of claim 14, wherein during said polishing and etching said insulation film is etched gradually, and when said second material film is exposed said second material film is etched to a greater extent than said insulation film, an end portion of said insulation film is smoothly etched, and when said first material film is exposed an etching speed is slowed.
Claim 23
Dependent Claim
31 words
The method of claim 14, wherein said main surface of said semiconductor substrate is oxidized and said first material film is formed on said oxidized main surface of said semiconductor substrate.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-10-13 | 2001-04-14 | 2001-10-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-10-13 | 2005-04-14 | 2005-10-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-10-13 | 2009-04-14 | 2009-10-14 | $7700.00 | Window Closed / Lapsed |