Channel accelerated tunneling electron cell, with a select region incorporated, for high density low power applications

Claim 2

A memory cell, capable of being programmed by using channel accelerated carrier tunneling method of programming, and erase by tunneling, having a select/accelerating region, along a sidewall of a trench, etched into a surface of a semiconducting layer, a memory region, adjacent the sidewall of the trench, on the surface of the semiconducting layer, a step having an edge formed at an intersection of the sidewall of the trench with the surface of the semiconducting layer, a drain on the surface of the semiconductor material, spaced away from the trench, adjacent the memory region, a source at a bottom of the trench, an integrated channel formed by the select/accelerating region and the memory region between the source and the drain, a carrier discontinuity, in the channel, formed at the edge of the step, a first conductive gate material, overlaying the select/accelerating region but separated from it by a gate dielectric, which allow independent control of the select/accelerating region of the integrated channel by application of a voltage to the first conductive layer, a memory element, comprising a floating gate electrode overlaying the memory region but separated from it by a tunnel dielectric, and a control gate overlaying the floating gate electrode but separated from it by an interlayer dielectric, which allow independent control of the memory region by potential on the floating gate electrode, due to charge stored in the floating gate electrode and coupled down voltage from the control gate.

Claim 3

The memory cell, capable of being programmed by using the channel accelerated carrier tunneling method of programming, and erased by tunneling, of claim 1, wherein the programming is by carriers accelerated in the select/accelerating region of the integrated channel, directed at the discontinuity, where velocity of the carriers in the select/accelerating region of the channel, enhanced by a field due to a high floating gate potential, allow collection by the floating gate electrode, charging the floating gate electrode and changing its potential, there by modifying channel conductivity in the memory region of the channel.

Claim 4

The memory cell, capable of being programmed by using the channel accelerated carrier tunneling method of programming, and erased by tunneling, of claim 1, wherein the programming is by turning the integrated channel of the memory cell on by, application of a voltage to the first conductive layer to turn the select/accelerating region on, application of a second voltage to the drain of the device, and applying a high voltage to the control gate, which gets coupled down to the floating gate electrode, such that carriers moving with a velocity in the select/accelerating region of the channel are directed at the discontinuity in the channel, where they are further accelerated by a field due to the voltage coupled down to the floating gate electrode, resulting in channel accelerated accelerated carrier tunneling at the discontinuity, thereby charging the floating gate electrode and modifying channel conductivity in the memory region of the channel.

Claim 5

The memory cell, capable of being programmed by using the channel accelerated carrier tunneling method of programming, and erased by tunneling, of claim 3, wherein the programming is without deliberate generation of hot carriers by impact ionization close to the discontinuity in the channel where programming takes place.

Claim 6

The memory cell, capable of being programmed by using the channel accelerated carrier tunneling method of programming, and erased by tunneling of claim 1, wherein the erase is by removal of charge from the floating gate electrode by application of a potential gradient across the tunnel dielectric of sufficient magnitude to cause tunneling of carriers from the floating gate, through the tunnel dielectric.

Claim 7

The memory cell, capable of being programmed by using the channel accelerated carrier tunneling method of programming, and erased by tunneling, of claim 1, wherein the read is by taking a measure of conductivity of the memory region of the channel.

Claim 8

The memory cell, capable of being programmed by using the channel accelerated carrier tunneling method of programming, and erased by tunneling, of claim 1, wherein the memory is read by turning on the select/accelerating region of the channel and applying a voltage to the drain to sense current flowing in the cell, which provides a measure of conductivity of the memory region of the channel.

Claim 9

A memory cell capable of being programmed, by carriers in a channel of a MOS device directly, using Channel Accelerated Carrier Tunneling method of programming, comprising, a semiconducting layer, doped by an impurity of a first conductivity type a trench etched into a surface of the semiconducting layer, a step having an edge along an intersection of the surface of the semiconducting and a sidewall of the trench, a gate dielectric deposed on the side wall of the trench and bottom of the trench, isolating the trench from the semiconducting layer, an impurity, of a second conductivity type, forming a source of the MOS device, introduced into the bottom of the trench, a first conductive gate material filling the trench, an insulating dielectric layer overlaying the trench, a tunnel dielectric layer deposed on the surface of the semiconducting layer adjacent the step, a second conductive layer deposed over the tunnel dielectric layer, forming a floating gate electrode, an interlayer dielectric deposed over the floating gate electrode, a third conductive layer, forming a control gate, overlaying the interlayer dielectric, an impurity of the second conductivity type, forming a drain of the MOS device, introduced into the semiconducting layer surface, spaced away from the side wall of the trench, adjacent the floating gate electrode, memory element formed of the floating gate electrode, the interlayer dielectric and the control gate, an integrated channel of the MOS device, formed between the source and the drain, having a first independently controllable select accelerating region, under the gate dielectric, along the side wall of the trench, controlled by a voltage applied to the first conductive layer and a second independently controller memory region, on the surface of the semiconducting material, under the tunnel dielectric separating the memory element from the semiconducting layer, controlled by charge on the floating gate combined with potential applied to it by coupling down from the control gate, a carrier discontinuity in the channel at edge of the step, towards which carriers in the select accelerating region are directed, to achieve channel accelerated tunneling during programming.

Claim 10

A memory cell capable of being programmed, by carriers in a channel of a MOS device directly, using Channel Accelerated Carrier Tunneling method of programming, comprising, a semiconducting layer, doped by an impurity of a first conductivity type a trench etched into a surface of the semiconducting layer, a step having an edge along an intersection of the surface of the semiconducting and a sidewall of the trench, a gate dielectric deposed on the side wall of the trench and bottom of the trench, isolating the trench from the semiconducting layer, an impurity, of a second conductivity type, forming a source of the MOS device, introduced into the bottom of the trench, a first conductive gate material filling the trench, an insulating dielectric layer overlaying the trench, a tunnel dielectric layer deposed on the surface of the semiconducting layer adjacent the step, a second conductive layer deposed over the tunnel dielectric layer, forming a floating gate electrode, an interlayer dielectric deposed over the floating gate electrode, a third conductive layer, forming a control gate, overlaying the interlayer dielectric, an impurity of the second conductivity type, forming a drain of the MOS device, introduced into the semiconducting layer surface, spaced away from the side wall of the trench, adjacent the floating gate electrode, memory element formed of the floating gate electrode, the interlayer dielectric and the control gate, an integrated channel of the MOS device, formed between the source and the drain, having a first independently controllable select accelerating region, under the gate dielectric, along the side wall of the trench, controlled by a voltage applied to the first conductive layer and a second independently controller memory region, on the surface of the semiconducting material, under the tunnel dielectric separating the memory element from the semiconducting layer, controlled by charge on the floating gate combined with potential applied to it by coupling down from the control gate, a carrier discontinuity in the channel at edge of the step, towards which carriers in the select accelerating region are directed, to achieve channel accelerated tunneling during programming.

Claim 11

The memory cell, capable of being programmed, by using the channel accelerated carrier tunneling method of programming, of claim 8, wherein the first conductive gate material is polysilicon.

Claim 12

The memory cell, capable of being programmed by using the channel accelerated carrier tunneling method of programming, of claim 8, wherein the second conductive layer and the third conductive layer are polysilicon.

Claim 13

The memory cell, capable of being programmed by using the channel accelerated carrier tunneling method of programming of claim 8, wherein the interlayer dielectric is an Oxide-Nitride-Oxide structure (ONO).