US5674782A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for efficiently removing by-products produced in dry-etching
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-03-04
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Granted: 1997-10-07
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Expires: 2016-03-04
Abstract
Abstract A method for efficiently removing by-products produced in dry-etching a fabricated structure of a semiconductor device, particularly, a polycide structure. The method includes the steps of sequentially forming a polysilicon layer and a refractory metal silicide layer to overlie previously fabricated structures on a semiconductor substrate, dry-etching the polysilicon layer and the refractory metal silicide layer to form a patterned polysilicon layer and a patterned refractory metal silicide layer, and thermal treating the resultant structure to remove at least one kind of by-product produced in the dry-etching step at a temperature higher than the boiling point of any by-product.
Inventors
- 👤 Nae-in Lee
- 👤 Moon-han Park
- 👤 Young-wug Kim
- 👤 Kwan-young Oh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:25
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/27; H10P70/273; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
136 words
A method for manufacturing a semiconductor device comprising the steps of: forming a polysilicon layer to overlie previously fabricated structures on a semiconductor substrate; depositing a refractory metal silicide layer on said polysilicon layer; sequentially dry-etching said polysilicon layer and said refractory metal silicide layer to form a patterned polysilicon layer and a patterned refractory metal silicide layer, using an etching gas comprising fluoride and chloride for dry etching said refractory metal silicide layer and using an etching gas comprising at least one of Cl 2 , HBr, He--O 2 and mixtures thereof for dry etching said polysilicon layer; and thermal treating said patterned polysilicon layer and said patterned refractory metal silicide layer at a temperature higher than 350° C. in a nitrogen atmosphere, to remove at least one by-product produced during said sequential dry-etching steps.
Claim 2
Independent Claim
136 words
A method for manufacturing a semiconductor device comprising the steps of: forming a polysilicon layer to overlie previously fabricated structures on a semiconductor substrate; depositing a refractory metal silicide layer on said polysilicon layer; sequentially dry-etching said polysilicon layer and said refractory metal silicide layer to form a patterned polysilicon layer and a patterned refractory metal silicide layer, using an etching gas comprising fluoride and chloride for dry etching said refractory metal silicide layer and using an etching gas comprising at least one of Cl 2 , HBr, He--O 2 and mixtures thereof for dry etching said polysilicon layer; and thermal treating said patterned polysilicon layer and said patterned refractory metal silicide layer at a temperature higher than 350° C. in a nitrogen atmosphere, to remove at least one by-product produced during said sequential dry-etching steps.
Claim 3
Dependent Claim
25 words
The method of claim 1, said thermal treating being performed at a boiling point temperature, higher than 350° C., of said at least one by-product.
Claim 4
Dependent Claim
12 words
The method of claim 1, said thermal treating constituting rapid thermal annealing.
Claim 5
Dependent Claim
11 words
The method of claim 1, said thermal treating constituting vacuum annealing.
Claim 6
Dependent Claim
36 words
The method of claim 1, said refractory metal silicide layer comprising at least one layer selected from the group consisting of WSi x , TiSi x , MoSi x , TaSi x and CoSi x .
Claim 7
Independent Claim
191 words
A method for manufacturing a semiconductor device comprising the steps of: forming a polysilicon layer to overlie previously fabricated structures on a semiconductor substrate; depositing a WSi 2 layer on said polysilicon layer; forming an oxide layer to overlie said WSi 2 layer; etching said oxide layer to form a patterned high temperature oxide layer; sequentially dry-etching said WSi 2 layer and said polysilicon layer to form a patterned WSi 2 layer and a patterned polysilicon layer, said dry-etching utilizing said oxide layer as an etching mask, dry-etching of said WSi 2 layer using an etching gas comprising at least one selected from the group consisting of SF 6 , Cl 2 and a mixture thereof, and said dry etching of said polysilicon layer using an etching gas comprising at least one selected from the group consisting of Cl 2 , HBr, He--O 2 and a mixture thereof; and thermal treating said patterned WSi 2 layer and said patterned polysilicon layer, to remove by-products produced in said sequential dry-etching steps, in a nitrogen atmosphere at a temperature higher than 350° C. and the boiling point of any one of said by-products.
Claim 8
Independent Claim
191 words
A method for manufacturing a semiconductor device comprising the steps of: forming a polysilicon layer to overlie previously fabricated structures on a semiconductor substrate; depositing a WSi 2 layer on said polysilicon layer; forming an oxide layer to overlie said WSi 2 layer; etching said oxide layer to form a patterned high temperature oxide layer; sequentially dry-etching said WSi 2 layer and said polysilicon layer to form a patterned WSi 2 layer and a patterned polysilicon layer, said dry-etching utilizing said oxide layer as an etching mask, dry-etching of said WSi 2 layer using an etching gas comprising at least one selected from the group consisting of SF 6 , Cl 2 and a mixture thereof, and said dry etching of said polysilicon layer using an etching gas comprising at least one selected from the group consisting of Cl 2 , HBr, He--O 2 and a mixture thereof; and thermal treating said patterned WSi 2 layer and said patterned polysilicon layer, to remove by-products produced in said sequential dry-etching steps, in a nitrogen atmosphere at a temperature higher than 350° C. and the boiling point of any one of said by-products.
Claim 9
Dependent Claim
12 words
The method of claim 6, said thermal treating constituting rapid thermal treating.
Claim 10
Dependent Claim
11 words
The method of claim 6, said thermal treating constituting vacuum annealing.
Claim 11
Dependent Claim
17 words
The method of claim 7, said rapid thermal treating temperature being between 500° C. and 800° C.
Claim 12
Dependent Claim
17 words
The method of claim 7, said rapid thermal treating being performed for about ten to thirty seconds.
Claim 13
Dependent Claim
16 words
The method of claim 8, said vacuum annealing temperature being between 500° C. and 700° C.
Claim 14
Dependent Claim
16 words
The method of claim 8, said vacuum annealing being performed for about one to five minutes.
Claim 15
Independent Claim
174 words
A method for manufacturing a semiconductor device comprising the steps of: sequentially forming a gate oxide layer, a polysilicon layer, a WSi 2 layer and a first oxide layer; etching said first oxide layer to form a patterned first oxide layer; sequentially dry-etching said WSi 2 layer and said polysilicon layer to expose said gate oxide layer and to form a patterned WSi 2 layer and a patterned polysilicon layer, said dry-etching using said patterned first oxide as an etching mask, said dry etching of said WSi 2 layer using an etching gas comprising SF 6 and Cl 2 ; thermal treating said patterned WSi 2 layer and said patterned polysilicon layer, in a nitrogen atmosphere at a temperature higher than 350° C., to remove at least one by-product produced during said sequential dry-etching steps; and forming a second oxide layer, and thereafter, anisotropically etching said second oxide layer, to form an oxide spacer on a side surface of said patterned first oxide layer, said patterned WSi 2 layer and said patterned polysilicon layer.
Claim 16
Independent Claim
174 words
A method for manufacturing a semiconductor device comprising the steps of: sequentially forming a gate oxide layer, a polysilicon layer, a WSi 2 layer and a first oxide layer; etching said first oxide layer to form a patterned first oxide layer; sequentially dry-etching said WSi 2 layer and said polysilicon layer to expose said gate oxide layer and to form a patterned WSi 2 layer and a patterned polysilicon layer, said dry-etching using said patterned first oxide as an etching mask, said dry etching of said WSi 2 layer using an etching gas comprising SF 6 and Cl 2 ; thermal treating said patterned WSi 2 layer and said patterned polysilicon layer, in a nitrogen atmosphere at a temperature higher than 350° C., to remove at least one by-product produced during said sequential dry-etching steps; and forming a second oxide layer, and thereafter, anisotropically etching said second oxide layer, to form an oxide spacer on a side surface of said patterned first oxide layer, said patterned WSi 2 layer and said patterned polysilicon layer.
Claim 17
Dependent Claim
15 words
The method of claim 1, said nitrogen atmosphere is being formed of N 2 gas.
Claim 18
Dependent Claim
15 words
The method of claim 6, said nitrogen atmosphere is being formed by N 2 gas.
Claim 19
Dependent Claim
15 words
The method of claim 13, said nitrogen atmosphere is being formed by N 2 gas.
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